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Ordering number : ENN6593
FTD1011
P-Channel Silicon MOSFET
FTD1011
Ultrahigh-Speed Switching Applications
Features
* * * *
Package Dimensions
unit : mm 2155A
[FTD1011]
0.65 0.425
Low ON-resistance. 2.5V drive. Mount height of 1.1mm. Composite type, facilitating high-density mounting.
8
5
0.5 4.5 6.4
0.95
3.0
1
0.25
4
(0.95)
0.125
1 : Drain1 2 : Source1 3 : Source1 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8
Absolute Maximum Ratings at Ta=25C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Total Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD PT Tch Tstg PW10s, duty cycle1% Mounted on a ceramic board (1000mm2!0.8mm)1unit Mounted on a ceramic board (1000mm2!0.8mm) Conditions Ratings -20 10 --3 -15 0.8 1.0 150 --55 to +150 Unit V V A A W W C C
Electrical Characteristics at Ta=25C
Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Sourse Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Sourse on-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=--1mA, VGS=0 VDS=-20V, VGS=0 VGS=8V, VDS=0 VDS=-10V, ID=--1mA VDS=-10V, ID=-3A ID=--3A, VGS=-4V ID=--2A, VGS=-2.5V Ratings min --20 --1 10 --0.4 6 8.8 50 68 65 96 --1.4 typ max Unit V A A V S m m
Marking : D1011
0.1
Specifications
1.0
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71400 TS IM TA-2725 No.6593-1/4
FTD1011
Continued from preceding page.
Parameter Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Total Gate Charge Gate-to-Source Charge Gate-to-Drain "Miller" Charge Diode Forward Voltage Symbol Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd VSD Conditions VDS=--10V, f=1MHz VDS=--10V, f=1MHz VDS=--10V, f=1MHz See specified Test Circuit See specified Test Circuit See specified Test Circuit See specified Test Circuit VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A VDS=--10V, VGS=-10V, ID=--3A IS=--3A, VGS=0 Ratings min typ 1000 190 120 13 110 65 75 23 1.6 2.5 --0.8 --1.5 max Unit pF pF pF ns ns ns ns nC nC nC V
Switching Time Test Circuit
VDD= --10V VIN 0V --4V VIN PW=10s D.C.1% ID= --3A RL=3.3
Electrical Connection
D2 S2 S2 G2
D
VOUT
G
P.G
50
S
D1 S1 S1 G1
--6
ID -- VDS
V --3.0V --2.5V
--6
ID -- VGS
VDS=10V
Drain Current, ID -- A
--2 .
--5
0V
--5
--4
Drain Current, ID -- A
--4
--4.0
--3
VGS= --1.5V
--3
--2
--2
25
C
C
--1 --1 0 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 --0.9 --1.0 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2
Ta =
--25
--1.4
75
C
--1.6
--1.8
--2.0
Drain-to-Source Voltage, VDS -- V
160
IT02298 160
RDS(on) -- VGS
Gate-to-Source Voltage, VGS -- V
IT02299
RDS(on) -- Ta
Ta=25C
Static Drain-to-Source On-State Resistance, RDS(on) -- m
140 120 100 80 60 40 20 0 0 --2 --4 --6 --8 --10 IT02300
Static Drain-to-Source On-State Resistance, RDS(on) -- m
140 120 100 80 60 40 20 0 --60
ID= --2A --3A
.5V = --2 A, VGS --2 I D= --4.0V V S= --3A, G I D=
--40
--20
0
20
40
60
80
100
120
140
160
Gate-to-Source Voltage, VGS -- V
Ambient Temperature, Ta -- C
IT02301
No.6593-2/4
FTD1011
2
yfs -- ID
VDS=10V
Forward Transfer Admittance, yfs -- S
10 7 5 3 2 1.0 7 5 3 2 0.1 --0.01
--10 7 5 3 2
IF -- VSD
VGS=0
25
C
= Ta
--2
C 5
Foward Current, IF -- A
--1.0 7 5 3 2 --0.1 7 5 3 2
C 75
--0.01 7 5 3 2
Ta= 75
C
C 25
--0.4
2
3
5 7 --0.1
2
3
5 7 --1.0
2
3
5 7 --10 IT02302
--0.001 --0.2
--0.3
--2 5
--0.6
C
--0.5
--0.7
--0.8
--0.9
--1.0
Drain Current, ID -- A
3 2
Ciss, Coss, Crss -- VDS
f=1MHz
Gate-to-Source Voltage, VGS -- V
Diode Forward Voltage, VSD -- V
--10 --9 --8 --7 --6 --5 --4 --3 --2 --1 0 0 2 4 6 8 10 12 14 16 18 20
IT02303
VGS -- Qg
VDS= --10V ID= --3A
Ciss, Coss, Crss -- pF
1000 7 5 3 2
Ciss
Coss
Crss
100 7 5 0 --2 --4 --6 --8 --10 --12 --14 --16 --18 --20
22
24
Drain-to-Source Voltage, VDS -- V
5 3
IT02304 3 2 --10 7 5
Total Gate Charge, Qg -- nC
IT02305
SW Time -- ID
VDD= --10V VGS= --4V
Drain Current, ID -- A
ASO
IDP= --15A <10s
1 10 ms ms
0m s
Switching Time, SW Time -- ns
2
100 7 5 3 2
td(off) tf
3 2 --1.0 7 5 3 2 --0.1 7 5 3 2
ID= --3A
10
DC
op
era
tio
n
tr td(on)
Operation in this area is limited by RDS(on) Ta=25C Single pulse Mounted on a ceramic board(1000mm2!0.8mm)1unit
2 3 5 7 --0.1 2 3 5 7--1.0 2 3 5 7 --10 23
10 7 --0.1 2 3 5 7 --1.0 2 3 5 7
--0.01 --0.01
Drain Current, ID -- A
1.2
IT02306 1.0
Drain-to-Source Voltage, VDS -- V
IT02307
PD -- Ta
PD(FET1) -- PD(FET2)
ou
Allowable Power Dissipation, PD(FET1) -- W
Allowable Power Dissipation, PD -- W
1.0
M
0.8
nte
do
0.8
na
ce
0.6
To t
1u nit
0.6
ram
ic
al
di
bo
ss
ard
ip
(1
ati
0.4
on
0.4
00
0m
m2 !0
.8m
0.2
0.2
m)
0 0
Mounted on a ceramic board(1000mm2!0.8mm)
20 40 60 80 100 120 140 160
0 0 0.2 0.4 0.6 0.8 1.0 IT02309
Ambient Temperature, Ta -- C
IT02308
Allowable Power Dissipation, PD(FET2) -- W
No.6593-3/4
FTD1011
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of July, 2000. Specifications and information herein are subject to change without notice.
PS No.6593-4/4

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