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| PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR ISSUE 1 - JANUARY 1997 FEATURES * VCEO= -40V * 3 Amp Continuous Current * 5 Amp Pulse Current * Low saturation Voltage * High Gain FZT1151A C E C B SOT223 ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at T amb=25C SYMBOL V CBO V CEO V EBO I CM IC IB P tot T j:T stg VALUE -45 -40 -5 -5 -3 -500 2.5 -55 to +150 UNIT V V V A A mA W C Operating and Storage Temperature Range The power which can be dissipated assuming the device is mounted in a typical manner on a P.C.B. with copper equal to 2 inches x 2 inches FZT1151A ELECTRICAL CHARACTERISTICS (at Tamb = 25C). VALUE PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current SYMBOL MIN. V (BR)CBO V CES V CEO V CEV V (BR)EBO I CBO -45 -40 -40 -40 -5 TYP. -95 -90 -85 -90 -8.5 -0.3 -0.3 -0.3 -60 -120 -140 -170 -200 -985 -850 270 250 180 100 450 400 300 190 45 145 40 170 460 -100 -100 -100 -90 -180 -220 -260 -300 -1100 -1000 MAX. UNIT V V V V V nA nA nA mV mV mV mV mV mV mV CONDITIONS. I C=-100A I C =-100A I C =-10mA * I C =-100A, V EB=+1V I E=-100A V CB=-36V V EB=-4V V CE =-32V I C=-0.1A, I B=-1.0mA* I C=-0.5A, I B=-5mA* I C=-1A, I B=-20mA* I C=-1.8A, I B=-70mA* I C=-3A, I B=-250mA* I C=-3A, I B=-250mA* I C =-3A, V CE=-2V* I C=-10mA, V CE=-2V* I C=-0.5A, V CE=-2V* I C=-2A, V CE=-2V* I C=-3A, V CE=-2V* I C=-5A, V CE=-2V* Emitter Cut-Off Current I EBO Collector Emitter Cut-Off Current Collector-Emitter Saturation Voltage I CES V CE(sat) Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio V BE(sat) V BE(on) h FE 800 Transition Frequency Output Capacitance Switching Times fT C cb t on t off MHz pF ns ns I C=-50mA, V CE=-10V f=50MHz V CB=-10V, f=1MHz I C=-2A, I B=-20mA, V CC=-30V I C=-2A, I B=20mA, V CC=-30V *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2%. FZT1151A TYPICAL CHARACTERISTICS 1.0 +25C 1.0 IC/IB=100 0.8 0.8 VCE(sat) - (V) VCE(sat) - (V) 0.6 0.4 0.2 0 1m 10m IC/IB=10 IC/IB=50 IC/IB=100 IC/IB=200 0.6 0.4 0.2 0 -55C +25C +100C 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) VCE(sat) v IC VCE(sat) v IC 750 VCE=2V 1.4 IC/IB=100 1.2 hFE - Typical Gain 500 VBE(sat) - (V) 1.0 0.8 0.6 0.4 0.2 0 -55C +25C +100C 250 +100C +25C -55C 0 1m 10m 100m 1 10 1m 10m 100m 1 10 IC - Collector Current (A) IC - Collector Current (A) hFE v IC VBE(sat) v IC 1.2 VCE=2V 10 0.9 IC - Collector Current (A) VBE(on) - (V) 1 DC 1s 100ms 10ms 1ms 100us 0.6 100m 0.3 -55C +25C +100C 0 1m 10m 100m 1 10 10m 100m 1 10 100 IC - Collector Current (A) VCE - Collector Emitter Voltage (V) VBE(on) v IC Safe Operating Area FZT1151A THERMAL CHARACTERISTICS 4 Thermal Resistance (C/W) 50 40 D=1 t1 D=t1 tP tP Max Power Dissipation - (Watts) 3 30 20 10 0 100s D=0.5 D=0.2 D=0.1 D=0.05 Single Pulse 2 1 0 0 20 40 60 80 100 120 140 160 1ms 10ms 100ms 1s 10s 100s Pulse Width T - Ambient Temperature (C) Transient Thermal Resistance Derating curve SPICE PARAMETERS *ZETEX FZT1151A Spice model Last revision 12/12/96 * .MODEL FZT1151A PNP IS =1.7e-12 NF =1.004 ISE=1.02e-13 + NE =1.55 BF =562 VAF=26.01 IKF=3.5 NR =.97 + ISC= 1.5e-13 NC =1.3 BR =38 VAR=2.41 IKR=0.3 + RE =25.37e-3 RB =250e-3 RC =25e-3 CJE=440e-12 + CJC=160e-12 VJC=1.058 MJC= 0.5678 TF =0.8e-9 TR =55.5e-9 * (c) 1995 ZETEX PLC The copyright in this model and the design embodied belong to Zetex PLC ("Zetex"). It is supplied free of charge by Zetex for the purpose of research and design and may be used or copied intact (including this notice) for that purpose only. All other rights are reserved. The model is believed accurate but no condition or warranty as to its merchantability or fitness for purpose is given and no liability in respect of any use is accepted by Zetex PLC, its distributors or agents. |
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