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| NTP45N06, NTB45N06 Power MOSFET 45 Amps, 60 Volts N-Channel TO-220 and D2PAK Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features http://onsemi.com * * * * * * * * * * * * Higher Current Rating Lower RDS(on) Lower VDS(on) Lower Capacitances Lower Total Gate Charge Tighter VSD Specification Lower Diode Reverse Recovery Time Lower Reverse Recovery Stored Charge Power Supplies Converters Power Motor Controls Bridge Circuits 45 AMPERES 60 VOLTS RDS(on) = 26 m N-Channel D Typical Applications G 4 S 1 TO-220AB CASE 221A STYLE 5 2 3 2 3 D2PAK CASE 418B STYLE 2 4 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 10 M) Gate-to-Source Voltage - Continuous - Non-Repetitive (tpv10 ms) Drain Current - Continuous @ TA = 25C - Continuous @ TA = 100C - Single Pulse (tpv10 s) Total Power Dissipation @ TA = 25C Derate above 25C Total Power Dissipation @ TA = 25C (Note 1.) Total Power Dissipation @ TA = 25C (Note 2.) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy - Starting TJ = 25C (VDD = 50 Vdc, VGS = 10 Vdc, RG = 25 , IL(pk) = 40 A, L = 0.3 mH, VDS = 60 Vdc) Symbol VDSS VDGR VGS VGS ID ID IDM PD Value 60 60 "20 "30 45 30 150 125 0.83 3.2 2.4 -55 to +175 240 Adc Apk W W/C W W C mJ Unit Vdc Vdc Vdc 1 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain NTP45N06 LLYWW 1 Gate 2 Drain 3 Source 1 Gate NTB45N06 LLYWW TJ, Tstg EAS 2 Drain 3 Source NTx45N06 LL Y WW = Device Code = Location Code = Year = Work Week 1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). ORDERING INFORMATION Device NTP45N06 NTB45N06 NTB45N06T4 Package TO-220AB D2PAK D2PAK Shipping 50 Units/Rail 50 Units/Rail 800/Tape & Reel (c) Semiconductor Components Industries, LLC, 2001 1 March, 2001 - Rev. 0 Publication Order Number: NTP45N06/D NTP45N06, NTB45N06 MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Thermal Resistance - Junction-to-Case - Junction-to-Ambient (Note 3.) - Junction-to-Ambient (Note 4.) Symbol RJC RJA RJA TL Value 1.2 46.8 63.2 260 Unit C/W Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds C ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (Note 5.) (VGS = 0 Vdc, ID = 250 Adc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 60 Vdc, VGS = 0 Vdc) (VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (Note 5.) Gate Threshold Voltage (Note 5.) (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (Note 5.) (VGS = 10 Vdc, ID = 22.5 Adc) Static Drain-to-Source On-Voltage (Note 5.) (VGS = 10 Vdc, ID = 45 Adc) (VGS = 10 Vdc, ID = 22.5 Adc, TJ = 150C) Forward Transconductance (Note 5.) (VDS = 8.0 Vdc, ID = 12 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (Note 6.) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge (VDS = 48 Vdc, ID = 45 Adc, Vd Ad VGS = 10 Vdc) (Note 5.) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage Reverse Recovery Time (IS = 45 Adc, VGS = 0 Vdc, Ad Vd dIS/dt = 100 A/s) (Note 5.) Reverse Recovery Stored Charge 3. 4. 5. 6. (IS = 45 Adc, VGS = 0 Vdc) (Note 5.) (IS = 45 Adc, VGS = 0 Vdc, TJ = 150C) VSD trr ta tb - - - - - 1.08 0.93 53.1 36 16.9 1.2 - - - - - C Vdc ns (VDD = 30 Vdc, ID = 45 Adc, VGS = 10 Vdc, RG = 9.1 ) (Note 5.) td(on) tr td(off) tf QT Q1 Q2 - - - - - - - 10 101 33 106 33 6.4 15 25 200 70 220 46 - - nC ns (VDS = 25 Vd VGS = 0 Vdc, Vdc, Vd f = 1.0 MHz) Ciss Coss Crss - - - 1224 345 76 1725 485 160 pF VGS(th) 2.0 - RDS(on) - VDS(on) - - gFS - 0.93 0.93 16.6 1.4 - - mhos 21 26 Vdc 2.8 7.2 4.0 - Vdc mV/C mOhm V(BR)DSS 60 - IDSS - - IGSS - - - - 1.0 10 100 nAdc 70 57 - - Vdc mV/C Adc Symbol Min Typ Max Unit QRR - 0.087 When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in2). When surface mounted to an FR4 board using the minimum recommended pad size, (Cu Area 0.412 in2). Pulse Test: Pulse Width 300 s, Duty Cycle 2%. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NTP45N06, NTB45N06 90 ID, DRAIN CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 0 4 5 1 2 3 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 6 VGS = 4.5 V VGS = 7.5 V VGS = 5.5 V VGS = 5 V VGS = 9 V VGS = 6.5 V VGS = 8 V VGS = 6 V VGS = 10 V 90 VGS = 7 V ID, DRAIN CURRENT (AMPS) 80 70 60 50 40 30 20 10 0 3 TJ = 25C TJ = 100C TJ = -55C 3.5 4 4.5 5 5.5 6 6.5 7 7.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 8 VDS > = 10 V Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE () RDS(on), DRAIN-TO-SOURCE RESISTANCE () Figure 2. Transfer Characteristics 0.05 VGS = 10 V 0.032 0.03 0.028 0.026 0.024 0.022 0.02 0.018 0 10 20 30 40 VGS = 15 V 50 60 70 80 90 VGS = 10 V 0.042 TJ = 100C 0.034 0.026 TJ = 25C 0.018 TJ = -55C 0.01 0 10 20 30 40 50 60 70 80 90 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) Figure 3. On-Resistance vs. Gate-to-Source Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 -50 -25 10 0 25 50 75 100 125 150 175 0 ID = 22.5 A VGS = 10 V 10000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V IDSS, LEAKAGE (nA) TJ = 150C 1000 TJ = 125C 100 TJ = 100C 10 20 30 40 50 60 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NTP45N06, NTB45N06 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3600 3200 C, CAPACITANCE (pF) 2800 2400 2000 1600 1200 800 400 0 10 VDS = 0 V Ciss Crss VGS = 0 V 12 10 8 6 4 2 0 0 ID = 45 TJ = 25C 4 8 12 16 20 24 28 32 36 Q1 Q2 QT VGS TJ = 25C Ciss Coss Crss 5 VGS 0 VDS 5 10 15 20 25 GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (VOLTS) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation 1000 IS, SOURCE CURRENT (AMPS) VDS = 30 V ID = 45 A VGS = 10 V tf tr td(off) td(on) 50 Figure 8. Gate-to-Source and Drain-to-Source Voltage vs. Total Charge VGS = 0 V TJ = 25C 40 t, TIME (ns) 100 30 20 10 10 1 1 10 RG, GATE RESISTANCE () 100 0 0.6 0.64 0.68 0.72 0.76 0.8 0.84 0.88 0.92 0.96 1 1.04 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 9. Resistive Switching Time Variation vs. Gate Resistance 1000 ID, DRAIN CURRENT (AMPS) VGS = 20 V SINGLE PULSE TC = 25C dc 10 10 ms 1 ms 1 RDS(on) Limit Thermal Limit Package Limit 100 s EAS, SINGLE PULSE DRAIN-TO-SOURCE AVALANCHE ENERGY (mJ) 280 Figure 10. Diode Forward Voltage vs. Current ID = 45 A 240 200 160 120 80 40 0 25 50 75 100 125 150 175 100 0.1 0.10 1 10 100 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) TJ, STARTING JUNCTION TEMPERATURE (C) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature http://onsemi.com 4 NTP45N06, NTB45N06 1 r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (NORMALIZED) Normalized to RJC at Steady State 0.1 0.01 0.00001 0.0001 0.001 0.01 t, TIME (s) 0.1 1 10 Figure 13. Thermal Response 10 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Normalized to RJA at Steady State, 1 square Cu Pad, Cu Area 1.127 in2, 3 x 3 inch FR4 board 1 0.1 0.01 0.001 0.00001 0.0001 0.001 0.01 0.1 t, TIME (s) 1 10 100 1000 Figure 14. Thermal Response http://onsemi.com 5 NTP45N06, NTB45N06 PACKAGE DIMENSIONS TO-220 THREE-LEAD TO-220AB CASE 221A-09 ISSUE AA NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ----0.080 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ----2.04 -T- B 4 SEATING PLANE F T S C Q 123 A U K H Z L V G D N R J STYLE 5: PIN 1. 2. 3. 4. http://onsemi.com 6 NTP45N06, NTB45N06 PACKAGE DIMENSIONS D2PAK CASE 418B-03 ISSUE D C E -B- 4 V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E G H J K S V INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 GATE DRAIN SOURCE DRAIN MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40 A 1 2 3 S -T- SEATING PLANE K G D 3 PL 0.13 (0.005) H M J TB M STYLE 2: PIN 1. 2. 3. 4. http://onsemi.com 7 NTP45N06, NTB45N06 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative. http://onsemi.com 8 NTP45N06/D |
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