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| NTE106 Silicon PNP Transistor Switching Transistor Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5V Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Total Device Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.36W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.06mW/C Total Device Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.9mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +200C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage V(BR)CEO IC = 3mA, IB = 0, Note 1 V(BR)CES IC = 100A, VBE = 0 Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 100A, IC = 0 ICES IB hFE VCE = 8V, VBE = 0 VCE = 8V, VBE = 0, TA = +125C Base Current ON Characteristics DC Current Gain IC = 1mA, VCE = 500mV IC = 10mA, VCE = 300mV IC = 10mA, VCE = 300mV, TA = -55C IC = 50mA, VCE = 1V, Note 1 35 50 20 40 - - - - - 120 - - VCE = 8V, VBE = 0 15 15 15 4.5 - - - - - - 5.9 - - - - - - - 10 5 1 V V V V nA A nA Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Cont'd) Collector-Emitter Saturation Voltage VCE(sat) IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA, Note 1 Base-Emitter Saturation Voltage VBE(sat) IC = 1mA, IB = 0.1mA IC = 10mA, IB = 1mA IC = 50mA, IB = 5mA, Note 1 Small-Signal Characteristics Current Gain-Bandwidth Product Output Capacitance Input Capacitance Switching Characteristics Turn-On Time Delay Time Rise Time Turn-Off Time Stoirage Time Fall Time Storage Time ton td tr toff ts tf ts IC = 10mA, IB1 = 10mA, IB2 = 10mA VCC = 1.5V, IC = 10mA, IB1 = IB2 = 1mA VCC = 1.5V, VBE = 0, IC = 10mA, IB1 = 1mA - - - - - - - 10 5 5 16 17 8 - 15 10 15 20 20 10 20 ns ns ns ns ns ns ns fT Cobo Cibo IC = 10mA, VCE = 10V, f = 100MHz VCB = 5V, IE = 0, f = 140kHz VBE = 500mV, IC = 0, f = 140kHz 850 - - 1100 2.0 2.0 - 3.0 3.5 MHz pF pF - - - - - - - 0.7 0.15 0.18 0.6 0.8 V V V V V V Symbol Test Conditions Min Typ Max Unit 0.75 0.86 0.90 - 1.1 1.5 Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. Note 2. fT is defined as the frequency at which |hfe| extrapolates to unity. .230 (5.84) Dia Max .195 (4.95) Dia Max .210 (5.33) Max .030 (.762) Max .500 (12.7) Min .018 (0.45) Base Emitter Collector 45 .041 (1.05) |
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