NTE112 Silicon Small Signal Schottky Diode
Description: The NTE112 is a metal to silicon junction diode in a DO35 type package primarly intended for UHF mixers and ultrafast switching applications.
Absolute Maximum Ratings: Repetitive Peak Reverse Voltage, VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V Forward Continuous Current (TA = +25C, Note 1), IF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30mA Surge Non-Repetitive Forward Current (tp 1s, Note 1), IFSM . . . . . . . . . . . . . . . . . . . . . . . . . . 60mA Operating Junction Temperature, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +125C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to +150 Thermal Resistance, Junction-to-Ambient (Note 1), Rth (j-a) . . . . . . . . . . . . . . . . . . . . . . . . 400C/W Maximum Lead Temperature (During soldering, 4mm from case, 10s max), TL . . . . . . . . . . +230C Note 1. On infinite heatsink with 4mm lead length.
Electrical Characteristics: (TA = +25C unless otherwise specified)
Parameter Static Characteristics Breakdown Voltage Forward Voltage Drop Reverse Current Dynamic Characteristics Capacitance Stored Charge Frequency C QS F VR = 0V, f = 1MHz IF = 10mA, Note 3 f = 1GHz, Note 4 - - - - - 6 1 3 7 pF pC dB V(BR) VF IR IR = 100A IF = 10mA, Note 2 VR = 1V, Note 2 5 - - - - - - 0.55 0.05 V V A Symbol Test Conditions Min Typ Max Unit
Note 2. Pulse Test: Pulse Width 300s, Duty Cycle < 2%. Note 3. Measured on a B-line Electronics QS-3 stored charge meter. Note 4. Noise Figure Test: - Diode is inserted in a tuned stripline circuit. Local oscillator frequency 1GHz Local oscillator power 1mW Intermediate frequency amplifier, tuned on 30MHz, has a noise figure, 1.5dB.
1.000 (25.4) Min
.200 (5.08) Max
.022 (.509) Dia Max
.090 (2.28) Dia Max Color Band Denotes Cathode
|
