View NTE2975_69891.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

NTE2975 MOSFET N-Channel, Enhancement Mode High Speed Switch
Features: D Advanced Process Technology D Ultra Low On-State Resistance D Dynamic dv/dt Rating D +175C Operating Temperature D Fast Switching D Fully Avalanche Rated Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 10V) TC = +25C (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53A TC = +100C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 37A Pulse (Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 180A Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 107W Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.71W/C Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20V Avalanche Current (Note 2), IAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28A Repetitive Avalanche Energy (Note 2), EAR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11mJ Single Pulse Avalanche Energy (Note 3, Note 4), EAS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 152mJ Peak Diode Recovery (Note 5), dv/dt . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0V/ns Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +175C Lead Temperature (During Soldering, 1.6mm from case, 10sec max), TL . . . . . . . . . . . . . . . +300C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.4C/W Typical Thermal Resistance, Case-to-Sink (Flat, greased surface), RthCS . . . . . . . . . . . . . 0.5C/W Maximum Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . 62C/W Note 1. Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 39A. Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 3. Starting TJ = +25C, L = 389H, RG = 25, IAS = 28A. Note 4. This is a calculated value limited to TJ = +175C. Note 5. ISD 28A, di/dt 220A/s, VDD V(BR)DSS, TJ +175C
Electrical Characteristics: (TJ = +25C unless otherwise specified)
Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Static Drain-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current Symbol V(BR)DSS TJ RDS(on) VGS(th) gfs IDSS IGSS QG QGS QGD td(on) tr td(off) tf LD LS Ciss Coss Crss IS ISM VF(S-D) trr Qrr ton Note 2 TJ = +25C, IS = 28A, VGS = 0, Note 6 TJ = +25C, IF = 28A, di/dt = 100A/s, Note 6 Between lead, .250 (6mm) from package and center of die contact VDS = 25V, VGS = 0, f = 1MHz VGS = 10V, VDD = 28V, ID = 28A, RG = 12 Test Conditions VGS = 0V, ID = 250A Min 55 - - 2.0 19 - - - - - - - - - - - - - - - - Typ - 0.057 - - - - - - - - - - 14 76 52 57 4.5 7.5 1696 407 110 Max - - 16.5 4.0 - 25 250 100 -100 72 11 26 - - - - - - - - - Unit V V/C m V S A A nA nA nC nC nC ns ns ns ns nH nH pF pF pF
V(BR)DSS Reference to +25C, ID = 1mA VGS = 10V, ID = 28A, Note 6 VDS = VGS, ID = 250A VDS = 25V, ID = 28A, Note 6 VDS = 55V, VGS = 0 VDS = 44V, VGS = 0, TJ = +150C VGS = 20V VGS = -20V VGS = 10V, ID = 28A, VDS = 44V
Gate-Source Forward Leakage Current
Total Gate Charge Gate-Source Charge Gate-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
Source-Drain Ratings and Characteristics Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time - - - - - - - - 67 208 53 180 1.3 101 312 A A V ns nC
Intristic turn-on time is negligible (turn-on is dominated by LS + LD)
Note 2. Repetitive rating; pulse width limited by maximum junction temperature. Note 6. Pulse width 400s, duty cycle 2%.
.420 (10.67) Max .110 (2.79) Isol .147 (3.75) Dia Max .500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Source Drain

▲Up To Search▲

Price & Availability of NTE2975

	To Download NTE2975 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .