NTE310P Integrated Thyristor/Rectifier (ITR) TV Horizontal Deflection & Trace Switch
Absolute Maximum Ratings: Repetitive Peak Forward Off-State Voltage (TC = +85C, Note 1), VDRM . . . . . . . . . . . . . . . . . . 800V Repetitive Peak Reverse Voltage (TC = +85C, Note 1), VRRM . . . . . . . . . . . . . . . . . . . . . . . . . . 750V Mean On-State Current (TC = +60C, 50Hz Sine Wave, Conduction Angle of 180), IO, IT(AV) Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.0A SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.0A RMS On-State Current (TC = +60C, 50Hz Sine Wave, Conduction Angle of 180), IF(RMS), IT(RMS) Rectifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4.5A SCR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0A Surge Current (TC = +85C, One Full Cycle), ITSM, IFSM 60Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz Sinusoidal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 70A Rate of Change of On-State Current (VD = 700V, IGT = 50mA, tr = 0.1s), di/dt . . . . . . . . . 200A/s Peak Forward Gate Power (Negative Gate Bias = -10V, 10s max, Note 2), PGM . . . . . . . . . . 25W Peak Reverse Gate Power (Negative Gate Bias = -10V, 10s max, Note 2), PRGM . . . . . . . . 25W Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Maximum Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.5C/W Lead Temperature (During Soldering, 1/8" from case, 10sec max), TL . . . . . . . . . . . . . . . . . . +225C Note 1. These values do not apply if there is a positive gate signal. Gate must be open or negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted, provided that the maximum reverse gate bias (as specified) is not exceeded. Electrical Characteristics: (TC = +25C "Maximum Ratings" unless otherwise specified)
Parameter Peak Forward Blocking Current Instantaneuos Voltage Rectifier SCR Peak Forward Voltage (Rectifier Only) Gate Trigger Current, Continuous DC Gate Trigger Voltage, Continuous DC Symbol IDRM VF VT VFM IGT VGT Test Conditions VD = 700V, TC = +85C IF = 10A IT = 30A IFM = 1A Anode Voltage = 12V, RL = 30 Anode Voltage = 12V, RL = 30 Min - - - - - - Typ 0.5 1.35 1.75 8 15 1.8 Max Unit 1.5 1.7 3.0 13 40 4.0 mA V V V mA V
Electrical Characteristics (Cont'd): (TC = +25C "Maximum Ratings" unless otherwise specified)
Parameter Rate of Rise of Off-State Voltage Reverse Recovery Time (Rectifier Only) Circuit Commutated Turn-Off Time Symbol dv/dt trr tq Test Conditions VD = 700V, TC = +85C IFM = 10A, -diF/dt = -10A/s, tp = 3s Minimum Negative Gate Bias = -20V, dv/dt = 175V/s, TC = +80C, Note 3 Min 175 0.5 - Typ - 0.7 - Max Unit - - 2.4 V/s s s
Note 3. Turn-off time increases with temperature; therefore, case temperature must not exceed the level indicated.
.420 (10.67) Max .110 (2.79)
.147 (3.75) Dia Max
.500 (12.7) Max
.250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Gate .100 (2.54) Cathode Anode/Tab
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