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| NTE3123 Phototransistor Silicon NPN, Intermediate Acceptance, High Sensitivity, Darlington Features: D Epoxy Resin Package D Compact D Intermediate Acceptance: q = 40 Typ D Visible Light Cut-Off Applications: D VCRs D Optoelectronic Switches Absolute Maximum Ratings: (TA = +25C unless otherwise specified) Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V Emitter-Collector Voltage, VECO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50mA Collector Power Disspation, PC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75mW Operating Temperature Range, Topr . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 to +85C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +85C Lead Temperature, TL During Soldering, 1.4mm from surface of resin edge, 3sec . . . . . . . . . . . . . . . . . . . . . . +260C Electrical Characteristics: Parameter Collector Current Collector Dark Current Symbol IC ICBO Test Conditions VCE = 2V, Ev = 2 x, Note 1 VCE = 10V, Ee = 0 1mW/cm2, Min 0.2 - - - VCE = 2V, IC = 5mA, RL = 100 - - - Typ 0.4 - - 860 400 300 40 Max 0.8 10-6 1.0 - 2000 1500 - Unit mA A V nm s s deg. Collector-Emitter Saturation Voltage VCE(sat) IC = 0.8mA, Ee = Note 1 Peak Emission Wavelength Response Time (Rise) Response Time (Fall) Half Intensity Angle P tr tf q Note 1. Ee, Ev: Illuminance, irradiance by CIE standard light source A (tungsten lamp). .118 (3.0) .098 (2.5) Dia .059 (1.5) .110 (2.8) .045 (1.15) .157 (4.0) .728 (18.5) .118 (3.0) 1.575 (40.0) Emitter Collector .020 (0.5) .100 (2.54) |
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