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NTE5351 Silicon Controlled Rectifier (SCR) for High Speed Switching
Features: D Fast Turn-Off Time D High di/dt and dv/dt Capabilities D Shorted-Emitter Gate-Cathode Construction D Center Gate Construction Non-Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRSOM . . . . . . . . . . . . . . . . . . . . . 700V Non-Repetitive Peak Off-State Voltage (Gate Open, Note 1), VDSOM . . . . . . . . . . . . . . . . . . . . 700V Repetitive Peak Reverse Voltage (Gate Open, Note 1), VRROM . . . . . . . . . . . . . . . . . . . . . . . . . . 600V Repetitive Peak Off-State Voltage (Gate Open, Note 1), VDROM . . . . . . . . . . . . . . . . . . . . . . . . . 600V RMS On-State Current (TC = +60C, 180 conduction angle), IT(RMS) . . . . . . . . . . . . . . . . . . . . 5.0A Average On-State Current (TC = +60C, 180 conduction angle), IT(AV) . . . . . . . . . . . . . . . . . . 3.2A Peak Surge (Non-Repetitive) On-State Current, ITSM (TC = +60C, for one full cycle at applied voltage) 60Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80A 50Hz (Sinusoidal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65A Rate of Change of On-State Current (VD = 600V, IGT = 50mA, t = 1 to 8.3ms), di/dt . . . . . 200A/s Fusing Current (TJ = -40 to +100C, t = 1 to 8.3ms), I2t . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25A Peak Forward Gate Power Dissipation (10s Max, Note 2), PGM . . . . . . . . . . . . . . . . . . . . . . . . . 3W Peak Reverse Gate Power Dissipation (10s Max, Note 2), PRGM . . . . . . . . . . . . . . . . . . . . . . . . 3W Average Gate Power Dissipation (10s Max, Note 2), PG(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5W Operating Case Temperature Range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +100C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -40 to +150C Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8C/W Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40C/W Lead Temperature (During Soldering, 1/32" from seating plane, 10sec max), TL . . . . . . . . . +225C Note 1. These values do not apply if there is a positive gate signal. Gate must be negatively biased. Note 2. Any product of gate current and gate voltage which results in a gate power less than the maximum is permitted.
Electrical Characteristics: (At "Maximum Ratings" and TC = +25C unless otherwise specified)
Parameter Peak Off-State Forward Current Peak Off-State Reverse Current Instantaneous On-State Voltage Instantaneous Holding Current Critical Rate of Rise of Off-State Current DC Gate Trigger Current DC Gate Trigger Voltage Gate Controlled Turn-On Time Circuit Commutated Turn-Off Time Symbol IDOM IROM vT iHO dv/dt IGT VGT tgt tq Test Conditions VD = 600V, TC = +100C, Gate Open VD = 600V, TC = +100C, Gate Open iT = 30A Peak Gate Open VD = 600V, exponential voltage rise, TC = +80C, Gate Open VD = 12V, RL = 30 VD = 12V, RL = 30 VDX = 600V, IGT = 300mA, tr = 0.1s, IT = 2A peak VCX = 600V, iT = 2A, pulse duration = 50s, dv/dt = 100V/s, -di/dt = -10A/s, IGT = 100mA, VGT = 0V (at turn-off), TC = +80C Min - - - - 100 - - - - Typ 0.5 0.3 2.2 20 250 15 1.8 0.7 4 Max 3.0 1.5 3.0 50 - 40 3.5 - 6 Unit mA mA V mA V/s mA V s s
.485 (12.3) Dia
.295 (7.5)
.062 (1.57)
.031 (0.78) Dia
.360 (9.14) Min Gate
.960 (24.3) .580 (14.7)
.147 (3.75) Dia (2 Places) .200 (5.08) .145 (3.7) R Max
Anode/Case
Cathode

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