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| e PTB 20170 30 Watts, 1.8-2.0 GHz Cellular Radio RF Power Transistor Description The 20170 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 30 watts minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 30 Watts, 1.8-2.0 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 40 Output Power (Watts) 35 30 25 20 15 10 5 0 0 1 2 3 4 5 6 7 2017 LOT COD E 0 VCC = 26 V ICQ = 100 mA f = 2.0 GHz Input Power (Watts) Package 20209 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCES VEBO IC PD Value 55 55 4.0 6.7 123 0.7 -40 to +150 1.43 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20170 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IC = 50 mA, RBE = 27 VBE = 0 V, IC = 50 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 250 mA Symbol V(BR)CER V(BR)CES V(BR)EBO hFE Min 55 55 4 20 Typ -- -- 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA, f = 2.0 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA, f = 2.0 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 30 W(PEP), ICQ = 100 mA, f = 2.0 GHz--all phase angles at frequency of test) Symbol Gpe C Min 7.0 38 -- Typ 8.5 46 -- Max -- -- 5:1 Units dB % -- Typical Performance Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency VCC= 26 V 11 Broadband Test Fixture Performance 10 60 Gain (dB) Efficiency (%) 8 7 6 Return Loss (dB) 5 1900 50 40 - 30 5 -15 20 -25 10 Output Power & Efficiency 12 70 ICQ = 100 mA Efficiency (%) 60 50 Output Power (W) 40 30 20 2050 9 Gain 10 9 8 VCC = 26 V ICQ = 100 mA POUT = 30 W Gain (dB) 7 1750 1800 1850 1900 1950 2000 1925 1950 1975 -35 0 2000 Frequency (MHz) Frequency (MHz) 2 5/18/98 Return Loss (dB) Efficiency (%) Gain (dB) e Output Power vs. Supply Voltage 40 -30 PTB 20170 Intermodulation Distortion vs. Power Output VCC = 26 V -32 Output Power (Watts) 35 ICQ = 100 mA f1 = 1.999 GHz f2 = 2.000 GHz IMD (dBc) -34 -36 -38 -40 30 25 ICQ = 100 mA f = 2.0 GHz 20 22 23 24 25 26 27 5 10 15 20 25 30 Supply Voltage (Volts) Output Power (Watts-PEP) Efficiency vs. Output Power 50 40 10 Power Gain vs. Output Power Power Gain (dB) Efficiency (%) 9 ICQ = 100 mA ICQ = 50 mA VCC = 26 V f = 2.0 GHz 1.0 10.0 100.0 30 20 8 VCC = 26 V 10 0 0 5 10 15 20 25 30 7 ICQ = 100 mA f = 2 GHz ICQ = 25 mA 6 0.1 Output Power (Watts) Output Power (Watts) Impedance Data (VCC = 26 Vdc, Pout = 30 W, ICQ = 100 mA) Z0 = 50 Z Source Z Load Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R 2.9 3.1 3.9 6.4 7.7 8.6 7.3 Z Source jX -6.3 -6.6 -7.1 -7.8 -6.3 -5.6 -2.7 R 2.60 2.40 2.20 2.00 1.80 1.85 1.92 Z Load jX -0.7 -1.2 -1.5 -1.8 -2.2 -2.7 -3.2 3 5/18/98 PTB 20170 Test Circuit e * Thermally linked to RF device. Schematic for f = 2 GHz Q1 L1 L1 L5, L6 L7 L8 C1, C2, C3, C4 C5, C7 C6, C8 C9 20170, NPN RF Transistor .185 2GHz, Microstrip 18 .195 2GHz, Microstrip 9.5 4 Turn #20 AWG, .120" I.D. 56 A SMT Inductor Ferrite Bead 33 pF ATC-B 33 pF ATC-B 0.1 F, 1206 10 pF SMT Electrolytic Capacitor 0-4 pF Johanson Variable Capacitor R1 R2 Circuit Board 22 118 W SMT Resistor 12 .5 W Axial Resistor .031 G-200, Solid Copper Bottom AlliedSignal Bias Parts (not shown on layout) Q2 BCP 56 D1 BAV 99 C10, C11 0.1 pF R2 2K R3, R4 10 SMT NPN Transistor Diode SMT Capacitor Potentiometer 1206 SMT Resistor Board Assembly (not to scale) 4 5/18/98 e PTB 20170 Artwork (1 inch ) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20170 Uen Rev. C 09-28-98 5 |
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