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e PTB 20190 175 Watts, 470-806 MHz Digital Television Power Transistor Description The 20190 is a class AB, NPN, common emitter RF power transistor intended for 28 Vdc operation across the 470 to 806 MHz UHF TV frequency band. Rated at 175 watts output power, it is specifically intended to operate uncorrected at 125 watts P-Sync (tested to EIA Standard 4.1.3, Section 5, Method B for class AB transmitters at 125 watts P-sync) or at a minimum of 175 watts in PEP applications. It may also be operated at comparable power levels for ATV broadcasting. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 175 Watts, 470-806 MHz Class AB Characteristics 50% Collector Efficiency at 175 Watts Gold Metallization Silicon Nitride Passivated Typical Gain vs. Frequency 10.5 10.0 9.5 Gain (dB) 9.0 8.5 8.0 7.5 470 201 90 LOT COD E VCC = 28 V ICQ = 2 x 100 mA Pout = 175 W 526 582 638 694 750 806 Frequency (MHz) Package 20224 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 40 60 4.0 25.0 330 1.89 -40 to +150 0.53 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20190 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 100 mA VBE = 0 V, IC = 100 mA IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1.0 A Symbol V(BR)CEO V(BR)CES V(BR)EBO hFE Min 25 55 3.5 20 Typ 30 60 5 50 Max -- -- -- 100 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 28 Vdc, POUT = 50 W, ICQ = 2 x 100 mA, f = 800 MHz) Collector Efficiency (VCC = 28 Vdc, POUT = 125 W, ICQ = 2 x 100 mA, f = 800 MHz) Intermodulation Distortion (Two Tone) (VCC = 28 Vdc, POUT = 125 W(PEP), ICQ = 2 x 100 mA, f = 800 MHz, f = 1.0 MHz) In-Channel Intermodulation Distortion (P-Sync = 125 W + Aural, EIA Std 4.1.3 Sect 5 Method B) Load Mismatch Tolerance (VCC = 28 Vdc, POUT = 125 W(PEP), ICQ = 2 x 100 mA, f = 800 MHz--all phase angles at frequency of test) Symbol Gpe Min 8.0 -- -- Typ 9.5 45 40 Max -- -- -- Units dB % dBc C IMD IM Product +/- 920 kHz -- -52 -- dB P-sync -- -- -- 3:1 Impedance Data VCC = 28 Vdc, POUT = 175 W, ICQ = 2 x 100 mA Z Source Z Load Frequency MHz 470 630 800 R 1.87 0.76 2.12 Z Source jX -4.1 -3.9 -3.8 R 2.42 3.34 2.72 Z Load jX 1.74 -1.49 -3.36 Z0 = 50 2 5/11/98 e Typical Characteristics IMD vs. Frequency -30 PTB 20190 2 Tone PEP (dB) -35 -40 -45 Pout = 125 W(PEP) VCC = 28 V -50 470 525 580 635 690 745 800 Frequency (MHz) Test Circuit Block Diagram for f = 800 MHz Q1 l1, l2 l5, l6 l3, l4 l7, l8 l9, l10 l11, l12 l13, l14 l15, l16 l17, l18 T1, T2 PTB 20190 .0280 800 MHz .0522 800 MHz .0654 800 MHz .0632 800 MHz .0652 800 MHz .0652 800 MHz .0300 800 MHz .0250 800 MHz .0454 800 MHz UT85-25 NPN RF Transistor Microstrip 18.5 Microstrip 18.5 Microstrip 70 Microstrip 10.2 Microstrip 8 Microstrip 9 Microstrip 11.5 Microstrip 60 Microstrip 18.5 Balun 3 C1, C2 5.1 pF C3, C12, C8, C20 10 F, 35 V SMT Capacitor C4, C7, C19, C16 0.1 F C5, C6, C17, C18, C21, C22 75 pF C9, C10 0-10 pF C11 0-20 pF R1, R2 15 , 1/4 W FB 4 mm. SMT Ferrite L1, L3 12 nh SMT Inductor L2, L4 68 nh SMT Inductor Circuit Board .031 G-200, Solid Copper Bottom 5/11/98 PTB 20190 e Artwork (1 inch ) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20190 Uen Rev. C 09-28-98 4 |
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