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| e PTB 20193 60 Watts, 1.8-1.9 GHz Cellular Radio RF Power Transistor Description The 20193 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 1.9 GHz. It is rated at 60 watts minimum output power and may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 60 Watts, 1.8-1.9 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 Output Power (Watts) 60 50 40 30 20 10 1 3 5 7 9 11 13 201 93 LOT COD E VCC = 26 V ICQ = 150 mA f = 1.9 GHz Input Power (Watts) Package 20223 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70 C) TSTG RJC Symbol VCER VCES VEBO IC PD Value 55 55 4.0 8 233 1.33 -40 to +150 0.75 Unit Vdc Vdc Vdc Adc W W/C C C/W 1 9/28/98 PTB 20193 Electrical Characteristics Characteristics Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions IB = 0 A, IC = 60 mA, RBE = 27 VBE = 0 V, IC = 60 mA IC = 0 V, IE = 25 mA VCE = 5 V, IC = 300 mA Symbol V(BR)CER V(BR)CES V(BR)EBO Hfe Min 55 55 4 20 Typ -- -- 5 50 Max -- -- -- 120 Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristics Gain (VCC = 26 Vdc, Pout = 15 W, ICQ = 150 mA, f = 1.9 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 150 mA, f = 1.9 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 60 W, ICQ = 150 mA, f = 1.9 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 30 W, ICQ = 150 mA, f = 1.9 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB Min 8.0 60 43 -- Typ 8.5 -- -- -- Max -- -- -- 5:1 Units dB Watts % -- C Impedance Data (data shown for fixed-tuned broadband circuit) (VCC = 26 Vdc, Pout = 60 W, ICQ = 150 mA) Z Source Z Load Z0 = 50 Frequency GHz 1.80 1.90 R 4.0 3.6 Z Source jX -1.6 -.08 R 2.7 2.6 Z Load jX 0.65 1.90 2 5/19/98 e Typical Performance Gain vs. Frequency (as measured in a broadband circuit) 9.0 PTB 20193 Efficiency vs. Output Power 60 50 Efficiency (%) 8.5 40 30 20 10 0 20 25 30 35 40 45 50 55 60 65 Gain (dB) 8.0 VCC = 26 V 7.5 VCC = 26 V ICQ = 150 mA f = 1.9 GHz ICQ = 150 mA Pout =15 W 1820 1840 1860 1880 1900 7.0 1800 Frequency (MHz) Output Power (Watts) Intermodulation Distortion vs. Power Output -26 -28 -30 VCC = 26 V ICQ = 150 mA f1 = 1.899 GHz f2 = 1.900 GHz IMD (dBc) -32 -34 -36 -38 -40 0 10 20 30 40 50 60 Output Power (Watts-PEP) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. LF (c) 1996 Ericsson Inc. EUS/KR 1301-PTB 20193 Uen Rev. A 09-28-98 3 5/19/98 |
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