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| e PTB 20230 45 Watts, 1.8-2.0 GHz PCN/PCS Power Transistor Description The 20230 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 45 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. 45 Watts, 1.8-2.0 GHz Class AB Characteristics 45% Collector Efficiency at 45 Watts Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 70 60 50 40 30 20 10 0 0 2 4 6 8 10 Output Power (Watts) 2023 0 LOT COD E VCC = 26 V ICQ = 250 mA f = 2.0 GHz Input Power (Watts) Package 20234 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70 C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 55 55 4.0 7.7 200 1.2 -40 to +150 0.85 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20230 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 100 mA IB = 0 A, IC = 100 mA, RBE = 22 IC = 0 A, IE = 5 mA VCE = 5 V, IC = 1 A Symbol V(BR)CES V(BR)CER V(BR)EBO hFE Min 55 55 4.0 20 Typ -- -- 5.0 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) Gain Compression (VCC = 26 Vdc, ICQ = 250 mA, f = 2 GHz) Input Return Loss (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) Collector Efficiency (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA, f = 2 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB Rtn Loss C Min 8.5 45 10 45 -- Typ 9.5 -- -- 50 -- Max -- -- -- -- 3:1 Units dB Watts dB % -- Typical Performance POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) 11 60 50 40 30 20 2050 Broadband Test Fixture Performance 20 60 Efficiency (%) 16 50 40 - 30 5 -15 20 8 -25 10 Return Loss (dB) 4 1900 1925 1950 1975 -35 0 2000 Output Power & Efficiency 12 70 Gain 10 9 8 7 1750 Gain (dB) VCC = 26 V ICQ = 250 mA 12 Gain (dB) Gain (dB) Efficiency (%) POUT = 45 W VCC = 26 V ICQ = 250 mA 1800 1850 1900 1950 2000 Frequency (MHz) Frequency (MHz) 2 4/28/98 Return Loss (dB) Efficiency (%) e Output Power vs. Supply Voltage 70 -20 -30 PTB 20230 Intermodulation Distortion vs. Output Power Output Power (Watts) 65 IMD (dBc) 60 55 50 45 40 22 23 24 25 26 27 -40 VCC = 26 V -50 -60 -70 10 20 30 40 50 60 ICQ = 250 mA f1 = 1999.9 MHz f2 = 2000.0 MHz ICQ = 250 mA f = 2.0 GHz Supply Voltage (Volts) Output Power (Watts-PEP) Power Gain vs. Output Power 11 Power Gain (dB) 10 ICQ = 250 mA ICQ = 125 mA 9 ICQ = 65 mA 8 VCC = 26 V f = 2.0 GHz 7 0 1 10 100 Output Power (Watts) Impedance Data VCC = 26 Vdc, POUT = 45 W, ICQ = 250 mA Z Source Z Load Frequency GHz 1.75 1.80 1.85 1.90 1.95 2.00 2.05 R Z Source jX -5.20 -5.70 -5.55 -5.40 -3.80 -1.50 0.00 R 3.20 3.00 2.90 2.77 2.75 2.80 2.95 3.36 3.57 5.14 6.60 8.00 8.95 7.72 Z Load jX -3.10 -2.80 -2.50 -2.10 -1.80 -1.40 -1.00 3 Z0 = 50 4/28/98 PTB 20230 Typical Scattering Parameters (VCE = 26 V, IC = 1.75 A) e S11 S21 Ang -179 -179 -180 179 179 178 178 178 177 177 176 176 175 173 171 169 166 162 176 -171 -177 180 f (MHz) 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 S12 Ang 77 70 34 19 11 12 55 130 137 135 132 128 124 119 113 105 92 48 5 -43 -76 -87 S22 Ang 6 23 71 85 89 88 84 83 83 80 74 72 74 75 72 67 57 23 -7 -55 67 94 Mag 0.936 0.946 0.963 0.970 0.972 0.971 0.972 0.975 0.980 0.980 0.984 0.986 0.994 1.00 0.995 0.976 0.952 0.757 0.682 0.825 0.965 0.994 Mag 1.44 1.06 0.397 0.194 0.100 0.046 0.014 0.026 0.048 0.069 0.090 0.113 0.144 0.186 0.247 0.350 0.585 1.02 1.02 0.979 0.526 0.355 Mag 0.002 0.002 0.003 0.004 0.006 0.009 0.011 0.012 0.014 0.017 0.019 0.019 0.020 0.023 0.028 0.034 0.043 0.052 0.038 0.019 0.004 0.009 Mag 0.798 0.828 0.883 0.924 0.943 0.982 1.00 0.952 0.923 0.895 0.898 0.897 0.892 0.885 0.881 0.875 0.856 0.751 0.756 0.848 0.897 0.908 Ang -172 -174 -174 -175 -177 -179 177 175 174 174 175 174 174 174 173 172 170 171 178 -178 178 177 Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L1 (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20230 Uen Rev. A 09-28-98 4 4/28/98 |
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