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| e PTB 20245 35 Watts, 2.1-2.2 GHz Wide-Band CDMA Power Transistor Description The 20245 is a class AB, NPN common emitter RF power transistor intended for 26 Vdc operation from 2.1 to 2.2 GHz frequency band. Rated at 35 watts minimum output power for PEP applications, it is specifically intended for operation as a final or driver stage in Wide CDMA or TDMA systems. Ion implantation, nitride surface passivation and gold metallization ensure excellent device reliability. 100% lot traceability is standard. * * * * 35 Watts, 2.1-2.2 GHz Class AB Characteristics Gold Metallization Silicon Nitride Passivated Typical Output Power vs. Input Power 60 Output Power (Watts) 50 40 30 20 10 0 0 2 4 6 8 10 12 202 45 LOT COD E VCC = 26 V ICQ = 100 mA f = 2000 MHz Input Power (Watts) Package 20223 Maximum Ratings Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage (collector open) Collector Current (continuous) Total Device Dissipation at Tflange = 25 C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70 C) TSTG RJC Symbol VCER VCBO VEBO IC PD Value 55 55 3.5 7.7 200 1.2 -40 to +150 0.85 Unit Vdc Vdc Vdc Adc Watts W/C C C/W 1 9/28/98 PTB 20245 Electrical Characteristics Characteristic Breakdown Voltage C to E Breakdown Voltage C to E Breakdown Voltage E to B DC Current Gain (100% Tested) e Conditions VBE = 0 V, IC = 20 mA IB = 0 A, IC = 20 mA, RBE = 22 IC = 0 A, IE = 5 mA VCE = 10 V, IC = 1.5 A Symbol V(BR)CES V(BR)CER V(BR)EBO hFE Min 55 55 3.5 30 Typ -- -- 4.0 40 Max -- -- -- -- Units Volts Volts Volts -- RF Specifications (100% Tested) Characteristic Gain (VCC = 26 Vdc, Pout = 10 W, ICQ = 85 mA, f = 2.2 GHz) Power Output at 1 dB Compression (VCC = 26 Vdc, ICQ = 85 mA, f = 2.2 GHz) Collector Efficiency (VCC = 26 Vdc, Pout = 35 W, ICQ = 85 mA, f = 2.2 GHz) Load Mismatch Tolerance (VCC = 26 Vdc, Pout = 17.5 W, ICQ = 85 mA f = 2.2 GHz--all phase angles at frequency of test) Symbol Gpe P-1dB C Min 7.5 35.0 -- -- Typ 8.5 -- 40 -- Max -- -- -- 5:1 Units dB Watts % -- Typical Performance Efficiency (%) Return Loss (dB) Typical POUT, Gain & Efficiency (at P-1dB) vs. Frequency Output Power (W) 11 Broadband Test Fixture Performance 10 60 Gain (dB) 8 Efficiency (%) 40 6 50 55 50 45 Output Power & Efficiency 12 60 Gain (dB) 10 Gain (dB) VCC = 26 V 9 8 Gain (dB) Efficiency (%) 40 35 30 25 VCC = 26 V ICQ = 85 mA Pout = 35 W - 30 5 -15 20 -25 10 -35 0 2200 ICQ = 250 mA 4 Return Loss (dB) 7 2050 2100 2150 2200 20 2250 2 2100 2120 2140 2160 2180 Frequency (MHz) Frequency (MHz) 2 4/3/98 e Output Power vs. Supply Voltage 60 10 9 PTB 20245 Power Gain vs. Output Power ICQ = 85 mA ICQ = 43 mA ICQ = 21 mA 7 6 5 Output Power (Watts) 55 50 45 40 35 30 22 23 24 25 26 27 Power Gain (dB) 8 ICQ = 85 mA f = 2200 MHz VCC = 26 V f = 2200 MHz 0 1 10 100 Supply Voltage (Volts) Output Power (Watts) Intermodulation Distortion vs. Power Output -20 VCC = 26 V -25 ICQ = 85 mA f1 = 2.199 GHz f2 = 2.200 GHz IMD (dBc) -30 -35 -40 5 10 15 20 25 30 35 40 Output Power (Watts-PEP) Impedance Data (VCC = 26 Vdc, Pout = 35 W, ICQ = 85 mA) Z Source Z Load Frequency GHz 2.05 2.10 2.15 2.20 2.25 R 3.09 3.79 4.38 4.58 3.98 Z Source jX -3.35 -3.45 -3.10 -2.40 -1.80 R 3.20 2.95 2.75 2.50 2.40 Z Load jX -2.90 -2.50 -2.05 -1.50 -1.30 3 Z0 = 10 4/3/98 PTB 20245 Test Circuit e * Thermally linked to RF device. Schematic for f = 2.2 GHz Q1 NPN RF Transistor Microstrip 50 .1 2 GHz Microstrip 75 .065 2 GHz Microstrip 16 .095 2 GHz Microstrip 12.5 .055 2 GHz Microstrip 9.7 .055 2 GHz Microstrip 12.5 .065 2 GHz Microstrip 22 C1, C6 0.1 F 1206 Chip C2, C7 10 F, 35 V SMT Tantalum C3, C4, C8, C10 20 pF ATC-100 C5, C9 0-4 pf Johanson Trimmer PTB 20245 L1 L2, L4 L3 R1 Board 56 nh SMT Inductor 3 Turn #22, 0.25" O.D. 4 mm. SMT Ferrite 22 1206 SMT Resistor 0.031 G-200 Solid Copper Bottom, AlliedSignal l1, l9 l2 l3 l4 l5 l6 l7 Bias Parts (not shown on layout) Q2 BCP 56 D1 BAV 99 C10, C11 0.1 pF R2 2K R3, R4 10 SMT NPN Transistor Diode SMT Capacitor Potentiometer 1206 SMT Resistor Parts Layout (not to scale) 4 5/20/98 e PTB 20245 Artwork (1 inch ) Ericsson Components RF Power Products 675 Jarvis Drive Morgan Hill, CA 95037 USA Telephone: 408-778-9434 1-877-GOLDMOS (1-877-465-3667) e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L3 (c) 1997 Ericsson Inc. EUS/KR 1301-PTB 20245 Uen Rev. A 09-28-98 5 9/16/98 |
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