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| (R) ST93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR s s s s MEDIUM VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED s APPLICATIONS: ELECTRONIC BALLASTS FOR FLUORESCENT LIGHTING DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Planar technology for high switching speeds and medium voltage capability. It uses a Cellular Emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. The ST93003 is expressly designed for a new solution to be used in compact fluorescent lamps, where it is coupled with the ST83003, its complementary NPN transistor. 3 2 1 SOT-32 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Emitter Voltage (V BE = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0, IB = -0.75 A, Collector Current Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature t p < 10s, T j < 150 o C) -1.5 -3 -0.75 -1.5 40 -65 to 150 150 A A A A W o o Value -500 -400 V (BR)EBO Unit V V V Collector Peak Current (t p < 5 ms) C C October 2002 1/7 ST93003 THERMAL DATA R thj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 3.12 89 o o C/W C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symbol I CES V (BR)EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Base Breakdown Voltage (I C = 0) Test Conditions V CE = -500V V CE = -500V I E = -10 mA T j = 125 o C -5 Min. Typ. Max. -1 -5 -10 Unit mA mA V V CEO(sus) Collector-Emitter Sustaining Voltage (I B = 0) V CE(sat) V BE(sat) h FE Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain I C = -10 mA L = 25 mH I C = -0.5 A I C = -0.35 A I C = -0.5 A I C = -10 mA I C = -0.35 A I C = -1 A I C = -0.35 A I B1 = -70 mA T p 25 s I C = -0.5 A V BE(off) = 5 V V clamp = 300 V L = 4 mH I BR 2.5 A I B = -0.1 A I B = -50 mA I B = -0.1 A V CE = -5 V V CE = -5 V V CE = -5 V V CC = 125 V I B2 = 70 mA (see Figure 2) I B1 = -0.1 A L = 10 mH (see Figure 1) C = 1.8 nF 25 o C < T C < 125 o C -400 V -0.5 -0.5 -1 10 16 4 V V V 25 32 tr ts tf ts tf E sb RESISTIVE LOAD Rise Time Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Avalanche Energy 1.5 90 2.2 0.1 400 40 2.9 ns s s ns ns mJ 12 Pulsed: Pulse duration = 300s, duty cycle = 1.5 % 2/7 ST93003 Safe Operating Area Derating Curve DC Current Gain DC Current Gain Collector Emitter Saturation Voltage Base Emitter Saturation Voltage 3/7 ST93003 Resistive Fall Time Resistive Storage Time Inductive Fall Time Inductive Storage Time Reverse Biased SOA 4/7 ST93003 Figure 1: Inductive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 3) Fast recovery rectifier Figure 2: Resistive Load Switching Test Circuit. 1) Fast electronic switch 2) Non-inductive Resistor 5/7 ST93003 SOT-32 (TO-126) MECHANICAL DATA mm MIN. A B b b1 C c1 D e e3 F G H H2 I O V 2.15 1.27 0.3 10 o DIM. 7.4 10.5 0.7 0.40 2.4 1.0 15.4 inch MAX. 7.8 10.8 0.9 0.65 2.7 1.3 16.0 MIN. 0.291 0.413 0.028 0.015 0.094 0.039 0.606 0.087 0.173 0.150 3.2 2.54 0.084 0.05 0.011 10o 0.118 0.126 0.100 TYP. MAX. 0.307 0.425 0.035 0.025 0.106 0.051 0.630 TYP. 2.2 4.4 3.8 3 1: Base 2: Collector 3: Emitter 0016114/B 6/7 ST93003 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 7/7 |
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