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N-CHANNEL 30V - 0.0035 - 80A D2PAK/I2PAK/TO-220 STripFETTM II POWER MOSFET
TYPE STB80NF03L-04/-1 STP80NF03L-04
s s s s
STP80NF03L-04 STB80NF03L-04 STB80NF03L-04-1
VDSS 30 V 30 V
RDS(on) <0.004 <0.004
ID 80 A 80 A
3 1
TYPICAL RDS(on) = 0.0035 EXCEPTIONAL dv/dt CAPABILITY 100% AVALANCHE TESTED LOW THRESHOLD DRIVE
3 12
D2PAK TO-263
I2PAK TO-262
DESCRIPTION
This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" stripbased process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
3 1 2
TO-220
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s MOTOR CONTROL, AUDIO AMPLIFIERS s DC-DC & DC-AC CONVERTERS s AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)
Ordering Information
SALES TYPE STB80NF03L-04 STB80NF03L-04T4 STP80NF03L-04 STB80NF03L-04-1 MARKING 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ 80NF03L-04 @ PACKAGE D2PAK D2PAK TO-220 I2PAK PACKAGING TUBE TAPE & REEL TUBE TUBE
ABSOLUTE MAXIMUM RATINGS Symbol Parameter VDS Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) VDGR VGS Gate- source Voltage Drain Current (continuous) at TC = 25C ID(**) Drain Current (continuous) at TC = 100C ID(**) IDM(*) Drain Current (pulsed) Ptot Total Dissipation at TC = 25C Derating Factor Peak Diode Recovery voltage slope dv/dt (1) EAS (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (*) Pulse width limited by safe operating area.
(**) Current Limited by Package
Value 30 30 20 80 80 320 300 2 2 2.3 -60 to 175 175
(1) ISD 80A, di/dt 240A/s, VDD 24V, Tj TJMAX (2) Starting T j = 25 oC, ID = 40A, VDD = 20V
Unit V V V A A A W W/C V/ns J C C
February 2003
.
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STB80NF03L-04/-1/STP80NF03L-04
THERMAL DATA
Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.5 62.5 300 C/W C/W C
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF
Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A VGS = 0 Min. 30 1 10 100 Typ. Max. Unit V A A nA
VDS = Max Rating VDS = Max Rating TC = 125C VGS = 20 V
IGSS
ON (*)
Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 4.5 V ID = 250 A ID = 40 A ID = 40 A Min. 1 0.0035 0.004 0.004 0.0055 Typ. Max. Unit V
DYNAMIC
Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS = 15 V ID = 15 A Min. Typ. 50 5500 1670 290 Max. Unit S pF pF pF
VDS = 25V, f = 1 MHz, VGS = 0
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ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 40 A VDD = 15 V RG = 4.7 VGS = 4.5 V (Resistive Load, Figure 3) VDD =24V ID =80 A VGS=4.5V Min. Typ. 30 270 85 23 40 110 Max. Unit ns ns nC nC nC
SWITCHING OFF
Symbol td(off) tf tr(Voff) tf tc Parameter Turn-off Delay Time Fall Time Off-Voltage Rise Time Fall Time Cross-over Time Test Conditions ID = 40 A VDD = 15 V RG = 4.7, VGS = 4.5 V (Resistive Load, Figure 3) ID = 80 A Vclamp = 24 V RG = 4.7 VGS = 4.5 V (Inductive Load, Figure 5) Min. Typ. 110 95 125 75 125 Max. Unit ns ns ns ns ns
SOURCE DRAIN DIODE
Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 80 A VGS = 0 75 0.15 4 Test Conditions Min. Typ. Max. 80 320 1.5 Unit A A V ns C A
di/dt = 100A/s ISD = 80 A VDD = 20 V Tj = 150C (see test circuit, Figure 5)
(*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (*)Pulse width limited by safe operating area.
Safe Operating Area
Thermal Impedance
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Output Characteristics Transfer Characteristics
Transconductance
Static Drain-source On Resistance
Gate Charge vs Gate-source Voltage
Capacitance Variations
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Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature
Source-drain Diode Forward Characteristics
Normalized Breakdown Voltage vs Temperature.
.
.
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Fig. 1: Unclamped Inductive Load Test Circuit Fig. 2: Unclamped Inductive Waveform
Fig. 3: Switching Times Test Circuits For Resistive Load
Fig. 4: Gate Charge test Circuit
Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times
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STB80NF03L-04/-1/STP80NF03L-04 D2PAK MECHANICAL DATA
DIM. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 0 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.591 0.050 0.055 0.094 0.015 8 mm. MIN. 4.4 2.49 0.03 0.7 1.14 0.45 1.21 8.95 8 10.4 0.394 0.334 0.208 0.624 0.055 0.069 0.126 TYP. MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.028 0.045 0.018 0.048 0.352 0.315 0.409 inch. TYP. TYP. 0.181
0.106
0.009 0.037 0.067 0.024 0.054 0.368
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TO-262 (I2PAK) MECHANICAL DATA
mm MIN. A A1 B B2 C C2 D e E L L1 L2 4.4 2.49 0.7 1.14 0.45 1.23 8.95 2.4 10 13.1 3.48 1.27 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 2.7 10.4 13.6 3.78 1.4 MIN. 0.173 0.098 0.027 0.044 0.017 0.048 0.352 0.094 0.393 0.515 0.137 0.050 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.106 0.409 0.531 0.149 0.055
DIM.
A
C2
B2
B
E
L1 L2 D L
P011P5/E
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e
A1
C
STB80NF03L-04/-1/STP80NF03L-04
TO-220 MECHANICAL DATA
DIM. MIN. A C D D1 E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 DIA. 13.0 2.65 15.25 6.2 3.5 3.75 0.49 0.61 1.14 1.14 4.95 2.4 10.0 16.4 14.0 2.95 15.75 6.6 3.93 3.85 0.511 0.104 0.600 0.244 0.137 0.147 4.40 1.23 2.40 1.27 0.70 0.88 1.70 1.70 5.15 2.7 10.40 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.645 0.551 0.116 0.620 0.260 0.154 0.151 mm TYP. MAX. 4.60 1.32 2.72 MIN. 0.173 0.048 0.094 0.050 0.027 0.034 0.067 0.067 0.203 0.106 0.409 inch TYP. MAX. 0.181 0.051 0.107
A
C
D1
L2
F1
D
G1
E
Dia. L5 L7 L6 L4
P011C
L9
F2
F
G
H2
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D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 BASE QTY 1000 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.795 0.960 3.937 1.197 BULK QTY 1000 1.039 0.520 MIN. inch MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 0.35 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 MIN. 0.413 0.618 0.059 0.062 0.065 0.449 0.189 0.153 0.468 0075 1.574 .0.0098 0.933 0.0137 0.956 inch MAX. 0.421 0.626 0.063 0.063 0.073 0.456 0.197 0.161 0.476 0.082
* on sales type
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Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2002 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com
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