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| Semiconductor STD123S NPN Silicon Transistor Features * * * * * Low saturation medium current application Extremely low collector saturation voltage Suitable for low voltage large current drivers High DC current gain and large current capability Low on resistance : RON=0.6(Max.) (IB=1mA) Ordering Information Type NO. STD123S Marking 123 Package Code SOT-23 Outline Dimensions 2.40.1 1.300.1 unit : mm 1 1.90 Typ. 3 2 0.4 Typ. 0.45~0.60 0.2 Min. 1.12 Max. 0.124 +0.05 0.38 -0.03 2.90.1 PIN Connections 1. Base 2. Emitter 3. Collector 0~0.1 KST-2059-002 1 STD123S Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature * : Package mounted on 99.5% alumina 10x8x0.1mm (Ta=25C) Symbol VCBO VCEO VEBO IC PC * Ratings 20 15 6.5 1 350 150 -55~150 Unit V V V A mW C C Tj Tstg Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Transistor frequency Collector output capacitance On resistance (Ta=25C) Symbol BVCBO BVCEO BVEBO ICBO IEBO hFE VCE(sat) fT Cob RON Test Condition IC=50A, IE=0 IC=1mA, IB=0 IE=50A, IC=0 VCB=20V, IE=0 VEB=6V, IC=0 VCE=1V, IC=100mA IC=500mA, IB=50mA VCE=5V, IC=50mA VCB=10V, IE=0, f=1MHz f=1KHz, IB=1mA, VIN=0.3V Min. Typ. Max. 20 15 6.5 150 0.1 260 5 0.6 0.1 0.1 0.3 - Unit V V V A A V MHz pF KST-2059-002 2 STD123S Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 VCE(sat)-IC Fig. 2 COb-VCB Fig. 4hFE-IC Fig. 5 RON-IB KST-2059-002 3 |
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