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 GaAlAs Infrared Emitting Diodes
TO-46 Flat Window Package -- 880 nm
VTE1063
PACKAGE DIMENSIONS inch (mm)
DESCRIPTION
CASE 24 TO-46 HERMETIC (Flat Window) CHIP SIZE: .018" x .018"
This wide beam angle TO-46 hermetic emitter contains a large area, double wirebonded, GaAlAs, 880 nm, high efficiency IRED chip suitable for higher current pulse applications.
ABSOLUTE MAXIMUM RATINGS @ 25C (unless otherwise noted)
Maximum Temperatures Storage and Operating: Continuous Power Dissipation: Derate above 30C: Maximum Continuous Current: Derate above 30C: Peak Forward Current, 10 s, 100 pps: Temp. Coefficient of Power Output (Typ.): -55C to 125C 200 mW 2.11 mW/C 100 mA 1.05 mA/C 3A -.8%/C Maximum Reverse Voltage: Maximum Reverse Current @ VR = 5V: Peak Wavelength (Typical): Junction Capacitance @ 0V, 1 MHz (Typ.): Response Time @ IF = 20 mA Rise: 1.0 s Fall: 1.0 s Lead Soldering Temperature: (1.6 mm from case, 5 seconds max.) 5.0V 10 A 880 nm 35 pF
260C
ELECTRO-OPTICAL CHARACTERISTICS @ 25C (See also GaAlAs curves, pages 108-110)
Output Irradiance Part Number Ee mW/cm2 Min. VTE1063 3.8 Typ. 5.0 Condition distance mm 36 Diameter mm 6.4 Radiant Intensity Ie mW/sr Min. 49 Total Power PO mW Typ. 80 Test Current IFT mA (Pulsed) 1.0 Forward Drop VF @ IFT Volts Typ. Typ. 2.8 Max. 3.5 35 Half Power Beam Angle 1/2
Refer to General Product Notes, page 2.
PerkinElmer Optoelectronics, 10900 Page Ave., St. Louis, MO 63132 USA Phone: 314-423-4900 Fax: 314-423-3956 Web: www.perkinelmer.com/opto
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