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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D168 BAQ806 AM PIN diode Product specification File under Discrete Semiconductors, SC10 1998 Aug 03 Philips Semiconductors Product specification AM PIN diode FEATURES * Glass passivated * High maximum operating temperature * Low leakage current * Excellent stability * UL 94V-O classified plastic package * Shipped in 12 mm embossed tape. APPLICATIONS * RF attenuator with low distortion for frequencies above 100 kHz. handbook, 4 columns BAQ806 DESCRIPTION DO-214AC surface mountable package with glass passivated chip. The well-defined void-free case is of a transfer-moulded thermo-setting plastic. cathode band k a Top view Side view MSA474 Fig.1 Simplified outline (SOD106) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VRRM VR Tstg Tj PARAMETER repetitive peak reverse voltage continuous reverse voltage storage temperature junction temperature MIN. - - -65 -65 MAX. 100 100 +175 +150 V V C C UNIT 1998 Aug 03 2 Philips Semiconductors Product specification AM PIN diode ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL VF PARAMETER forward voltage CONDITIONS IF = 100 mA; see Figs 2 and 3 IF = 100 mA; Tj = Tj max; see Figs 2 and 3 IR reverse current charge carrier life time VR = 100 V; see Fig. 4 VR = 100 V; Tj = 125 C; see Fig. 4 when switched from IF = 10 mA to IR = 6 mA; measured at 10% of IR; see Fig. 13 f = 1 MHz; see Figs 5, 6, 7 and 8 VR = 0 V VR = 2 V rD diode forward resistance f = 100 kHz; see Figs 9 and 14 IF = 10 A IF = 100 A IF = 1 mA IF = 10 mA rs diode series resistance f = 100 kHz; see Figs 10, 11 and 12 VR = 0 V VR = 2 V f = 1 MHz; see Figs 10, 11 and 12 VR = 0 V VR = 2 V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 note 2 Note CONDITIONS 25 100 50 250 1000 5000 2100 12000 - - - - 3300 560 62 7 - - 9 5 MIN. - - - - 15 TYP. 0.9 0.7 - - 25 BAQ806 MAX. 1.1 0.9 0.1 30 - V V UNIT A A s Cd diode capacitance 11 6 6000 900 90 10 - - - - pF pF k k k k VALUE 25 100 150 UNIT K/W K/W K/W 1. Device mounted on Al2O3 printed-circuit board, 0.7 mm thick; thickness of copper 35 m, see Fig. 15 2. Device mounted on epoxy-glass printed-circuit board, 1.5 mm thick; thickness of copper 40 m, see Fig. 15. For more information please refer to the `General Part of Handbook SC10' 1998 Aug 03 3 Philips Semiconductors Product specification AM PIN diode GRAPHICAL DATA MGG500 BAQ806 104 handbook, halfpage IF (mA) 103 102 104 handbook, halfpage IF (mA) 103 102 MGG501 10 10 1 10-1 10-2 0 0.4 0.8 1.2 1.6 VF (V) Dotted line: Tj = Tj max. Solid line: Tj = 25 C. 2.0 1 10-1 10-2 0 0.4 0.8 1.2 1.6 VF (V) 2.0 Dotted line: Tj = Tj max. Solid line: Tj = 25 C. Fig.2 Forward current as a function of forward voltage; typical values. Fig.3 Forward current as a function of forward voltage; maximum values. 102 handbook, halfpage IR (A) 10 MGG502 1 10-1 0 50 100 Tj (C) 150 VR = VRRMmax. Fig.4 Reverse current as a function of junction temperature; maximum values. 1998 Aug 03 4 Philips Semiconductors Product specification AM PIN diode BAQ806 MGM477 handbook, halfpage 10 handbook, halfpage 12 MGM478 Cd (pF) 8 Cd (pF) 0V 8 6 4 4 2 2V 0 0 2 4 6 8 VR (V) 10 0 10 102 103 f (kHz) 104 f = 1 MHz Fig.5 Diode capacitance as a function of reverse voltage; typical values. Fig.6 Diode capacitance as a function of frequency; typical values. handbook, halfpage 40 MGM479 handbook, halfpage 6 MGM480 Cd (pF) 30 Cd (pF) 5 85 C 25 C -40 C 20 85 C 25 C -40 C 4 10 3 0 10 102 103 f (kHz) 104 2 10 102 103 f (kHz) 104 VR = 0 V. VR = 2 V. Fig.7 Diode capacitance as a function of frequency; typical values. Fig.8 Diode capacitance as a function of frequency; typical values. 1998 Aug 03 5 Philips Semiconductors Product specification AM PIN diode BAQ806 104 handbook, halfpage rD () 103 MGM481 105 handbook, halfpage rs (k) 104 0V VR = 2 V MGM482 102 103 10 102 1 10 102 103 IF (A) 104 10 10 102 103 f (kHz) 104 f = 100 kHz; see Fig. 14. Tj = 25 C. Fig.9 Diode forward resistance as a function of forward current; typical values. Fig.10 Diode series resistance as a function of frequency; typical values. 105 handbook, halfpage rs (k) 104 25 C 103 -40 C MGM483 105 handbook, halfpage rs (k) 104 MGM484 -40 C 25 C 85 C 103 102 85 C 102 10 10 102 103 f (kHz) 104 10 10 102 103 f (kHz) 104 VR = 0 V. VR = 2 V. Fig.11 Diode series resistance as a function of frequency; typical values. Fig.12 Diode series resistance as a function of frequency; typical values. 1998 Aug 03 6 Philips Semiconductors Product specification AM PIN diode BAQ806 handbook, full pagewidth 10 IF (mA) 10 F DUT pulse f = 1 kHz 10 mA 10 0 10% IR (mA) 90% 6 t MGG506 Input impedance oscilloscope: 1 M, 22 pF; tr 7 ns. Source impedance: 50 ; tr 15 ns. Fig.13 Charge carrier life time test circuit and definition. 50 handbook, halfpage 50 R1 1 F IF DUT R2 4.5 11 V 50 MGG507 100 kHz 50 Vin Vout 2.5 IF (mA) 0.1 1 10 R1 () 3000 300 30 R2 (k) 100 10 1 1.25 MSB213 Dimensions in mm. Fig.14 Diode forward resistance test circuit. Fig.15 Printed-circuit board for surface mounting. 1998 Aug 03 7 Philips Semiconductors Product specification AM PIN diode PACKAGE OUTLINE Transfer-moulded thermo-setting plastic small rectangular surface mounted package; 2 connectors BAQ806 SOD106 H D A A1 c Q E b (1) 0 2.5 scale 5 mm DIMENSIONS (mm are the original dimensions) UNIT mm A 2.3 2.0 A1 0.05 b 1.6 1.4 c 0.2 D 4.5 4.3 E 2.8 2.4 H 5.5 5.1 Q 3.3 2.7 Note 1. The marking band indicates the cathode. OUTLINE VERSION SOD106 REFERENCES IEC JEDEC DO-214AC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-09 1998 Aug 03 8 Philips Semiconductors Product specification AM PIN diode DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BAQ806 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1998 Aug 03 9 Philips Semiconductors Product specification AM PIN diode NOTES BAQ806 1998 Aug 03 10 Philips Semiconductors Product specification AM PIN diode NOTES BAQ806 1998 Aug 03 11 Philips Semiconductors - a worldwide company Argentina: see South America Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113, Tel. +61 2 9805 4455, Fax. +61 2 9805 4466 Austria: Computerstr. 6, A-1101 WIEN, P.O. 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Box 1041, AUCKLAND, Tel. +64 9 849 4160, Fax. +64 9 849 7811 Norway: Box 1, Manglerud 0612, OSLO, Tel. +47 22 74 8000, Fax. +47 22 74 8341 Pakistan: see Singapore Philippines: Philips Semiconductors Philippines Inc., 106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI, Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474 Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA, Tel. +48 22 612 2831, Fax. +48 22 612 2327 Portugal: see Spain Romania: see Italy Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW, Tel. +7 095 755 6918, Fax. +7 095 755 6919 Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762, Tel. +65 350 2538, Fax. +65 251 6500 Slovakia: see Austria Slovenia: see Italy South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale, 2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000, Tel. +27 11 470 5911, Fax. +27 11 470 5494 South America: Al. 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No. 5, 80640 GULTEPE/ISTANBUL, Tel. +90 212 279 2770, Fax. +90 212 282 6707 Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7, 252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461 United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes, MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421 United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409, Tel. +1 800 234 7381 Uruguay: see South America Vietnam: see Singapore Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD, Tel. +381 11 625 344, Fax.+381 11 635 777 Internet: http://www.semiconductors.philips.com For all other countries apply to: Philips Semiconductors, International Marketing & Sales Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825 (c) Philips Electronics N.V. 1998 SCA60 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 115104/00/01/pp12 Date of release: 1998 Aug 03 Document order number: 9397 750 03998 |
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