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HA-5177/883
July 1994
Ultra Low Offset Voltage Operational Amplifier
Description
The HA-5177/883 is a monolithic, all bipolar, precision operational amplifier, utilizing Intersil Dielectric Isolation and advance processing techniques. This design features a combination of precision input characteristics, wide gain bandwidth (2MHz) and high speed (0.5V/s min) and is an improved version of the HA-5135/883. The HA-5177/883 uses advanced matching techniques and laser trimming to produce low offset voltage (10V typ, 60V max) and low offset voltage drift (0.1V/oC typ, 0.6V/oC max). This design also features low voltage noise (9nV/Hz typ), Low current noise (0.32pA/Hz typ), nanoamp input currents, and 126dB minimum gain. These outstanding features along with high CMRR (140dB typ, 110dB min) and high PSRR (135dB typ, 110dB min) make this unity gain stable amplifier ideal for high resolution data acquisition systems, precision integrators, and low level transducer amplifiers.
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * Low Offset Voltage. . . . . . . . . . . . . . . . . . . . .60V (Max) 10V (Typ) * Low Offset Voltage Drift . . . . . . . . . . . . 0.6V/oC (Max) 0.1V/oC (Typ) * High Voltage Gain . . . . . . . . . . . . . . . . . . . . 126dB (Min) 150dB (Typ) * High CMRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min) 140dB (Typ) * High PSRR . . . . . . . . . . . . . . . . . . . . . . . . . . 110dB (Min) 135dB (Typ) * Low Noise . . . . . . . . . . . . . . . . . . . . . . . . 11nV/Hz (Max) 9nV/Hz (Typ) * Low Power Consumption . . . . . . . . . . . . . 51mW (Max) * Wide Gain Bandwidth Product . . . . . . . . . . 2MHz (Min) * Unity Gain Stable
Ordering Information
PART NUMBER HA2-5177/883 HA7-5177/883 HA4-5177/883 TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC -55oC to +125oC PACKAGE 8 Pin Can 8 Lead CerDIP 20 Lead Ceramic LCC
Applications
* High Gain Instrumentation Amplifiers * Precision Control Systems * Precision Integrators * High Resolution Data Converters * Precision Threshold Detectors * Low Level Transducer Amplifiers
Pinouts
HA-5177/883 (CERDIP) TOP VIEW HA-5177/883 (CLCC) TOP VIEW
BAL 2 NC BAL1 NC NC
HA-5177/883 (METAL CAN) TOP VIEW
BAL1 8 BAL 2 1 18 NC 17 V+ 16 NC 15 OUT 14 NC IN+ 3 4 V5 NC 2 + 7 V+ 6 OUT
BAL 2 ININ+ V-
1 2 3 4 +
8 7 6 5
BAL1 V+ NC OUT NC -IN NC +IN NC 4 5 6 7 8
3
2
1 20 19
+
IN -
9 10 11 12 13 NC VNC NC NC
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
Spec Number
3-159
511041-883 File Number 3733.1
Specifications HA-5177/883
Absolute Maximum Ratings
Voltage Between V+ and V- Terminals . . . . . . . . . . . . . . . . . . . . 44V Differential Input Voltage (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . 7V Voltage at Either Input Terminal . . . . . . . . . . . . . . . . . . . . . . V+ to VInput Current. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25mA Output Current . . . . . . . . . . . . . . . . . . . .Full Short Circuit Protection Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Storage Temperature Range . . . . . . . . . . . . . . . . . -65oC to +150oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC
Thermal Information
Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . . . 115oC/W 28oC/W Ceramic LCC Package . . . . . . . . . . . . . . 65oC/W 15oC/W Metal Can Package . . . . . . . . . . . . . . . . . 155oC/W 67oC/W Package Power Dissipation Limit at +75oC for TJ +175oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 870mW Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.54W Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 645mW Package Power Dissipation Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.7mW/oC Ceramic LCC Package . . . . . . . . . . . . . . . . . . . . . . . . 15.4mW/oC Metal Can Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6.5mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Operating Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15V VINCM 1/2 (V+ - V-) RL 600
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 1 2, 3 Input Bias Current IB VCM = 0V, RS = 10k, 50 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, +125oC, -55oC -55oC +25oC MIN -60 -100 -6 -8 MAX 60 100 6 8 UNITS V V nA nA
PARAMETERS Input Offset Voltage
SYMBOL VIO
CONDITIONS VCM = 0V
+I B + - I B ---------------------------- 2
Input Offset Current IIO VCM = 0V, +RS = 10k, -RS = 10k V+ = +3V, V- = -27V 1 2, 3 1 2, 3 -CMR V+ = +27V, V- = -3V 1 2, 3 Large Signal Voltage Gain +AVOL -AVOL Common Mode Rejection Ratio +CMRR VOUT = 0V and +10V, RL = 2k VOUT = 0V and -10V, RL = 2k VCM = 10V, V+ = +5V, V- = - 25V, VOUT = -10 VCM = 10V, V+ = +25V, V- = - 5V, VOUT = +10 RL = 2k RL = 2k RL = 600 RL = 600 4 5, 6 4 5, 6 1 2, 3 1 2, 3 4 5, 6 -VOUT1 +VOUT2 -VOUT2 4 5, 6 4 4 +25oC +125oC, -55oC +25oC +125oC, +125oC, -55oC -55oC +25oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, +125oC, -55oC -55oC +25oC +25oC +25oC -6 -8 12 12 126 120 126 120 116 110 116 110 12 12 10 6 8 -12 -12 -12 -12 -10 nA nA V V V V dB dB dB dB dB dB dB dB V V V V V V
Common Mode Range
+CMR
-CMRR
Output Voltage Swing
+VOUT1
Spec Number 3-160
511041-883
Specifications HA-5177/883
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 100k, VOUT = 0V, Unless Otherwise Specified. GROUP A SUBGROUPS 4 5, 6 -IOUT Quiescent Power Supply Current +ICC -ICC Power Supply Rejection Ratio +PSRR VOUT = +10V VOUT = 0V, IOUT = 0mA VOUT = 0V, IOUT = 0mA VSUP = 15V, V+ = +5V, V- = - 15V, V+ = +20V, V- = - 15V VSUP = 15V, V+ = +15V, V- = - 5V, V+ = +15V, V- = - 20V Note 2 4 5, 6 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 -VIOAdj NOTES: 1. The input stage has series 500 resistors along with back to back diodes. This provides large differential input voltage protection for a slight increase in noise voltage. 2. This test is for functionality only to assure adjustment through 0V. TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS Device Tested at: VSUPPLY = 15V, RSOURCE = 50, RLOAD = 2k, CLOAD = 50pF, AVCL = +1V/V, Unless Otherwise Specified. GROUP A SUBGROUPS 7 7 7 7 7 7 LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC MIN 0.5 0.5 MAX 420 420 40 40 UNITS V/s V/s ns ns % % Note 2 1 2, 3 LIMITS TEMPERATURE +25oC +125oC, +125oC, -55oC -55oC +25oC +25oC +125oC, -55oC +25oC +125oC, +125oC, -55oC -55oC +25oC MIN 15 15 -1.7 -1.7 110 110 110 110 0.3 0.3 MAX -15 -15 1.7 1.7 -0.3 -0.3 UNITS mA mA mA mA mA mA mA mA dB dB dB dB mV mV mV mV
PARAMETERS Output Current
SYMBOL +IOUT
CONDITIONS VOUT = -10V
-PSRR
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC
Offset Voltage Adjustment
+VIOAdj
PARAMETERS Slew Rate
SYMBOL +SR -SR
CONDITIONS VOUT = -3V to +3V, VIN S.R. 25V/s VOUT = +3V to -3V, VIN S.R. 25V/s VOUT = 0 to +200mV 10% TR 90% VOUT = 0 to -200mV 10% TF 90% VOUT = 0 to +200mV VOUT = 0 to -200mV
Rise and Fall Time
tR tF
Overshoot
+OS -OS
Spec Number 3-161
511041-883
Specifications HA-5177/883
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS Device Characterized at: VSUPPLY = 15V, RLOAD = 2k, CLOAD = 50pF, AV = +1V/V, Unless Otherwise Specified. LIMITS PARAMETERS Average Offset Voltage Drift Average Offset Current Drift Average Bias Current Drift Differential Input Resistance Low Frequency Peak-to-Peak Noise Voltage Low Frequency Peak-to-Peak Noise Current Input Noise Voltage Density SYMBOL VIOTC IIOTC IRTC RIN ENP-P INP-P EN CONDITIONS VCM = 0V Versus Temperature Versus Temperature VCM = 0V 0.1Hz to 10Hz 0.1Hz to 10Hz RS = 20, fO = 10Hz RS = 20, fO = 100Hz RS = 20, fO = 1kHz Input Noise Current Density IN RS = 2M, fO = 10Hz RS = 2M, fO = 100Hz RS = 2M, fO = 1kHz Gain Bandwidth Product Full Power Bandwidth Minimum Closed Loop Stable Gain Settling Time Output Resistance Power Consumption NOTES: 1. Parameters listed in Table 3 are controlled via design or process parameters and are not directly tested at final production. These parameters are lab characterized upon initial design release, or upon design changes. These parameters are guaranteed by characterization based upon data from multiple production runs which reflect lot to lot and within lot variation. 2. Full Power Bandwidth guarantee based on Slew Rate measurement using FPBW = Slew Rate/(2VPEAK). 3. Power Consumption based upon Quiescent Supply Current test maximum. (No load on outputs.) GBWP FPBW CLSG tS ROUT PC VO = 100mV, 1Hz fO 100kHz VPEAK = 10V RL = 2k, CL = 50pF To 0.1% for a 10V Step Open Loop VOUT = 0V, IOUT = 0mA NOTES 1 1 1 1 1 1 1 1 1 1 1 1 1 1, 2 1 1 1 1, 3 TEMPERATURE -55oC to +125oC -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC -55oC to +125oC MIN 20 2 8 +1 MAX 0.6 40 40 0.6 45 18 13 11 4 2.3 1 15 70 51 UNITS V/oC pA/oC pA/oC M VP-P pAP-P nV/Hz nV/Hz nV/Hz pA/Hz pA/Hz pA/Hz MHz kHz V/V s mW
+25oC +25oC -55oC to +125oC
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLES 1 AND 2) 1 1 (Note 1), 2, 3, 4, 5, 6, 7 1, 2, 3, 4, 5, 6, 7 1
Spec Number 3-162
511041-883
HA-5177/883 Die Characteristics
DIE DIMENSIONS: 72 x 103 x 19 mils 1 mils 1840 x 2620 x 483m 25.4m METALLIZATION: Type: Al, 1% Cu Thickness: 16kA 2kA GLASSIVATION: Type: Nitride (Si3N4) over Silox (SIO2, 5% Phos.) Silox Thickness: 12kA 2kA Nitride Thickness: 3.5kA 1.5kA WORST CASE CURRENT DENSITY: 6.0 x 104A/cm2 SUBSTRATE POTENTIAL (Powered Up): VTRANSISTOR COUNT: 71 PROCESS: Bipolar Dielectric Isolation
Metallization Mask Layout
HA-5177/883
BAL1
V+
OUT
NC
BAL2
-IN
+IN
V-
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 3-163
511041-883

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