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| KSD794/794A KSD794/794A Audio Frequency Power Amplifier * Complement to KSB744/KSB744A 1 TO-126 2.Collector 3.Base 1. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC PC TJ TSTG Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter- Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current (DC) Collector Dissipation (Ta=25C) Collector Dissipation (TC=25C) Junction Temperature Storage Temperature : KSD794 : KSD794A Value 70 45 60 5 3 5 0.6 1 10 150 - 55 ~ 150 Units V V V V A A A W W C C * PW10ms, Duty Cycle50% Electrical Characteristics TC=25C unless otherwise noted Symbol ICBO IEBO hFE1 hFE2 VCE(Sat) VBE(Sat) fT Cob Parameter Collector Cut-off Current Emitter Cut-off Current * DC Current Gain * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Test Condition VCB = 45V, IE = 0 VEB = 3V, IC = 0 VCE = 5V, IC = 20mA VCE = 5V, IC = 0.5A IC =1.5A, IB = 0.15A IC =1.5A, IB = 0.15A VCE = 5V, IE = 0.1A VCB = 10V, IE = 0, f = 1MHz 30 60 70 100 0.3 0.8 60 40 Min. Typ. Max. 1 1 320 2 2 V V MHz pF Units A A * Pulse Test: PW350s, Duty Cycle2% Pulsed hFE Classificntion Classification hFE2 R 60 ~ 120 O 100 ~ 200 Y 160 ~ 320 (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSD794/794A Typical Characteristics 2.0 1000 IB = 20mA VCE = 5V IC[A], COLLECTOR CURRENT 1.6 1.2 IB = 10mA 0.8 hFE, DC CURRENT GAIN IB = 2mA IB = 18mA IB = 16mA IB = 14mA IB = 12mA IB = 8mA IB = 6mA 100 0.4 IB = 4mA 0.0 0 10 20 30 40 50 10 1E-3 0.01 0.1 1 10 VCE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VBE(sat), VCE(sat)[V], SATURATION VOLTAGE 10 1000 IC = 10 IB IE=0 f=1MHz 1 V BE(sat) Cob[pF], CAPACITANCE 0.1 1 10 100 0.1 VCE (sat) 0.01 1E-3 0.01 10 1 10 100 IC[A], COLLECTOR CURRENT VCB[V], COLLECTOR-BASE VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Collector Output Capacitance fT(MHz), CURRENT GAIN BANDWIDTH PRODUCT 1000 10 IC(Pulse) MAX. VCE = 5V IC(DC) MAX. PW = atio IC[A], COLLECTOR CURRENT Dis sip 1 10m nL imit ed 1m s 10 0 us s DC 100 b S/ m Li ite d 10 0.1 1 0.01 0.01 0.1 1 1 10 100 IC[A], COLLECTOR CURRENT VCE [V], COLLECTOR-EMITTER VOLTAGE Figure 5. Current Gain Bandwidth Product Figure 6. Safe Operating Area (c)2001 Fairchild Semiconductor Corporation D794 D794A VCEO MAX. Rev. A1, June 2001 KSD794/794A Typical Characteristics (Continued) 160 16 140 14 dT(%), IC DERATING 120 PC[W], POWER DISSIPATION 125 150 175 200 12 100 10 80 S/b L im it e d 8 60 Di ss 6 ip 40 at ion Li m 4 20 ite d 2 0 0 25 50 o 75 100 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 7. Derating Curve Of Safe Operating Areas Figure 8. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 KSD794/794A Package Demensions TO-126 0.10 3.90 8.00 0.30 3.25 0.20 14.20MAX o3.20 0.10 11.00 0.20 (1.00) 0.75 0.10 1.60 0.10 0.75 0.10 0.30 (0.50) 1.75 0.20 #1 2.28TYP [2.280.20] 2.28TYP [2.280.20] 13.06 16.10 0.20 0.50 -0.05 +0.10 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, June 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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