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SLA5013 Absolute maximum ratings Symbol VDSS VGSS ID ID(pulse) EAS* PT N channel 100 20 5 10 (PW1ms) 30 N-channel + P-channel H-bridge (Ta=25C) External dimensions A *** SLA Ratings P channel -100 20 5 10 (PW1ms) -- Unit V V A A mJ W W C/W C/W Vrms C C 5 (Ta=25C, with all circuits operating, without heatsink) 35 (Tc=25C, with all circuits operating, with infinite heatsink) 25 (Junction-Air, Ta=25C, with all circuits operating) 3.57 (with all circuits operating, Tc=25C, with all circuits operating) 1000 (Between fin and lead pin, AC) 150 -40 to +150 j-a j-c VISO Tch Tstg * : VDD=20V, L=10mH, ID=2.5A, unclamped, see Fig. E on page 15. sEquivalent circuit diagram 10 7 8 11 2 9 4 Pch 12 Nch 1 3 6 5 Characteristic curves ID-VDS Characteristics (Typical) N-ch 10 10V 7V ID-VGS Characteristics (Typical) P-ch N-ch 10 -10V -10 (VDS=10V) 8 6V -8 8 -7V ID (A) ID (A) 6 -6 4 5V -4 -6V ID (A) 6 4 TC=-40C 25C 2 VGS=4V -2 -5V 125C 2 VGS=-4V 0 0 2 4 6 8 10 -0 0 -2 -4 -6 -8 -10 0 0 2 4 6 8 VDS (V) VDS (V) VGS (V) RDS(ON)-ID Characteristics (Typical) N-ch 0.4 (VGS=10V) P-ch 1.0 (VGS=-10V) P-ch -10 (VDS=-10V) -40 C 25 C TC = 0.8 0.3 -8 12 5 C () () (ON) RDS RDS 0.2 (ON) 0.6 ID (A) -6 0.4 -4 0.1 0.2 -2 0 0 2 4 6 8 10 0 -0 0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 ID (A) ID (A) VGS (V) RDS(ON)-TC Characteristics (Typical) N-ch 0.5 ID=5A VGS=10V P-ch 1.2 ID=-5A VGS=-10V 0.4 1.0 () (ON) (ON) 0.3 () RDS 0.8 RDS 0.6 0.2 0.4 0.1 0.2 0 -40 0 50 100 150 0 -40 0 50 100 150 TC (C) TC (C) 50 SLA5013 Electrical characteristics N channel Symbol min V(BR)DSS IGSS IDSS VTH Re(yfs) RDS(ON) Ciss Coss ton toff VSD trr 2.0 2.4 3.7 0.27 350 130 60 40 1.1 330 1.8 0.30 100 500 250 4.0 Specification typ max Unit V nA Conditions ID=250A, VGS=0V VGS=20V VDS=100V, VGS=0V VDS=10V, ID=250A VDS=10V, ID=5A VGS=10V, ID=5A VDS=25V, f=1.0MHz, VGS=0V ID=5A, VDD 50V, VGS=10V, see Fig. 3 on page 16. ISD=5A, VGS=0V ISD=100mA -2.0 0.9 2.0 0.55 300 200 150 200 -4.5 220 -5.5 0.7 Specification min -100 500 -250 -4.0 typ max P channel Unit V nA Conditions ID=-250A, VGS=0V VGS= 20V VDS=-100V, VGS=0V VDS=-10V, ID=-250A VDS=-10V, ID=-5A VGS=-10V, ID=-5A VDS=-25V, f=1.0MHz, VGS=0V ID=-5A, VDD -50V, VGS=-10V, (Ta=25C) A V S pF pF ns ns V ns A V S pF pF ns ns V ns see Fig. 4 on page 16. ISD=-5A, VGS=0V ISD= 100mA Characteristic curves Re(yfs)-ID Characteristics (Typical) N-ch 7 5 Safe Operating Area (SOA) P-ch (VDS=-10V) (VDS=10V) 5 N-ch 20 ID (pulse) max (TC=25C) 10 1m m s (1 0 s 10 5 5 C S (O N ) Re (yfs) (S) 12 ID (A) =- TC 40 Re (yfs) (S) C 12 C 5 TC =- C 40 M LI I D TE 10 s sh R D ot ) 1 25C 1 1 0.5 25C 0.5 0.5 0.3 0.05 0.1 0.5 1 5 10 0.3 -0.05 -0.1 0.1 -0.5 -1 -5 -10 0.5 1 5 10 50 100 ID (A) ID (A) VDS (V) Capacitance-VDS Characteristics (Typical) N-ch 1000 500 VGS=0V f=1MHz P-ch 1000 VGS=0V f=1MHz P-ch -20 ID (pulse) max (TC=25C) 10 0 s Ciss -10 500 Capacitance (pF) Capacitance (pF) Ciss -5 N ) LI M E IT D 10 m 1m s (1 sh ot s Coss ID (A) 100 Coss R D S (O ) 100 -1 50 -0.5 50 Crss Crss 10 0 10 20 30 40 50 20 0 -10 -20 -30 -40 -50 -0.1 -0.5 -1 -5 -10 -50 -100 VDS (V) VDS (V) VDS (V) IDR-VSD Characteristics (Typical) N-ch 10 PT-Ta Characteristics P-ch 40 35 With Silicone Grease Natural Cooling All Circuits Operating -10 8 -8 30 W ith IDR (A) IDR (A) PT (W) 6 -6 25 20 15 In fin ite at He sin 4 10 V -4 -1 0V k 0V S= 0V 2 5V S= -2 V -5 VG 10 5 0 0 50 100 150 Without Heatsink VG 0 0 0.5 1.0 1.5 0 0 -1 -2 -3 -4 VSD (V) VSD (V) Ta (C) 51 |
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