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| (R) STGB3NB60HD N-CHANNEL 3A - 600V TO-263 PowerMESHTM IGBT T YPE STGB3NB60HD s V CES 600 V V CE(sat) < 2.8 V IC 3A s s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCHTM ANTIPARALLEL DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 (Suffix "T4") DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz). APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V CES V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Storage T emperature Max. Operating Junction Temperature o o Value 600 20 6 3 24 70 0.56 -65 to 150 150 Un it V V A A A W W /o C o o C C (*) Pulse width limited by max. junction temperature June 1999 1/8 STGB3NB60HD THERMAL DATA R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 1.78 62.5 0.5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbo l V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 100 1000 100 Typ. Max. Unit V A A nA V CE = Max Rating V CE = Max Rating V GE = 20 V ON () Symbo l V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Con ditions IC = 250 A IC = 3 A IC = 3 A Min. 3 2.4 1.9 Typ. Max. 5 2.8 Unit V V V Tj = 125 o C DYNAMIC Symbo l gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Con ditions V CE =25 V V CE = 25 V IC = 3 A f = 1 MHz V GE = 0 Min. 1.3 160 23 4.5 Typ. 2.4 235 33 6.6 21 6 7.6 12 300 43 8.6 27 Max. Unit S pF pF pF nC nC nC A V CE = 480 V IC = 3 A V GE = 15 V V clamp = 480 V T j = 150 o C R G =10 SWITCHING ON Symbo l t d(on) tr (di/dt) on Eo n (r) Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Co nditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 10 T j = 125 o C IC = 3 A R G = 10 IC = 3 A V GE = 15 V Min . T yp. 16 30 400 77 Max. Unit ns ns A/s J 2/8 STGB3NB60HD ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF Symbo l tc t r (v off ) t d (off) tf E o ff(**) E ts(r) tc t r (v off ) t d (off) tf E o ff(**) E ts(r) Parameter Test Con ditions IC = 3 A V GE = 15 V Min. Typ. 90 36 53 70 33 100 180 82 58 110 88 165 Max. Unit ns ns ns ns J J ns ns ns ns J J Cross-O ver Time VCC = 480 V Off Voltage Rise Time R GE = 10 Delay Time Fall T ime Turn-off Switching Loss Total Switching Loss Cross-O ver Time VCC = 480 V Off Voltage Rise Time R GE = 10 Delay Time T j = 125 o C Fall T ime Turn-off Switching Loss Total Switching Loss IC = 3 A V GE = 15 V COLLECTOR-EMITTER DIODE Symbo l If I fm Vf t rr Q rr I rrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 3 A If = 3 A If = 3 A dI/dt = 100 A/S T j = 125 o C V R =200 V T j = 125 oC 1.6 1.4 87 160 3.7 T est Co nditio ns Min. T yp. Max. 3 24 2.0 Un it A A V V ns nC A (*) Pulse width limited by max. junction temperature (r) Include recovery losses on the STTA306 freewheeling diode () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization) Thermal Impedance 3/8 STGB3NB60HD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collector Current Gate Threshold vs Temperature 4/8 STGB3NB60HD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/8 STGB3NB60HD Switching Off Safe Operating Area Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching Fig. 3 Switching Waveforms 6/8 STGB3NB60HD TO-263 (D2PAK) MECHANICAL DATA mm MIN. A A1 B B2 C C2 D E G L L2 L3 4.4 2.49 0.7 1.14 0.45 1.21 8.95 10 4.88 15 1.27 1.4 TYP. MAX. 4.6 2.69 0.93 1.7 0.6 1.36 9.35 10.4 5.28 15.85 1.4 1.75 MIN. 0.173 0.098 0.027 0.044 0.017 0.047 0.352 0.393 0.192 0.590 0.050 0.055 inch TYP. MAX. 0.181 0.106 0.036 0.067 0.023 0.053 0.368 0.409 0.208 0.624 0.055 0.068 DIM. D A C A2 DETAIL "A" A1 B2 B G C2 DETAIL"A" E L2 L L3 P011P6/E 7/8 STGB3NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. 8/8 http://www.st.com . |
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