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(R)
STGD3NB60S
N-CHANNEL 3A - 600V DPAK Power MESHTM IGBT
PRELIMINARY DATA
TYPE STGD3NB60S
s
V CES 600 V
V CE(sat ) < 1.5 V
IC 3A
s s s s
HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) VERY LOW ON-VOLTAGE DROP (Vcesat) HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT SURFACE-MOUNTING DPAK (TO-252) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4")
3 1
DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding perfomances. The suffix "S" identifies a family optimized to achieve minimum on-voltage drop for low frequency applications (<1kHz). APPLICATIONS s LIGHT DIMMER s STATIC RELAYS s MOTOR CONTROL
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symb ol V CES V ECR V GE IC IC I CM (*) P tot T s tg Tj Parameter Collector-Emitter Voltage (VGS = 0) Reverse Battery Protection G ate-Emitter Voltage Collector Current (continuous) at Tc = 25 C Collector Current (continuous) at Tc = 100 C Collector Current (pulsed) T otal Dissipation at Tc = 25 C Derating Factor Storage T emperature Max. Operating Junction Temperature
o o o
Value 600 20 20 6 3 24 40 0.32 -65 to 150 150
Un it V V V A A A W W /o C
o o
C C
(*) Pulse width limited by safe operating area
June 1999
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STGD3NB60S
THERMAL DATA
R thj -case R thj -amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max T yp 3.125 100 1.5
o o
C/W C/W o C/W
ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF
Symbo l V BR(CES) I CES IGES Parameter Collector-Emitt er Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Con ditions I C = 250 A V GE = 0 T j = 25 oC T j = 125 o C V CE = 0 Min. 600 10 100 100 Typ. Max. Unit V A A nA
V CE = Max Rating V CE = Max Rating V GE = 20 V
ON ()
Symbo l V GE(th) V CE(SAT ) Parameter Gate Threshold Voltage Collector-Emitt er Saturation Voltage V CE = V GE V GE = 15 V V GE = 15 V Test Con ditions IC = 250 A IC = 3 A IC = 1 A Min. 2.5 1.2 1 Typ. Max. 5 1.5 Unit V V V
DYNAMIC
Symbo l gf s C i es C o es C res QG Q GE Q GC I CL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total G ate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current Test Con ditions V CE =25 V V CE = 25 V IC = 3 A f = 1 MHz V GE = 0 Min. 1.7 Typ. 2.5 255 30 5.6 18 5.4 5.5 12 Max. Unit S pF pF pF nC nC nC A
V CE = 480 V
IC = 3 A
V GE = 15 V
V clamp = 480 V T j = 150 o C
R G =1k
SWITCHING ON
Symbo l t d(on) tr (di/dt) on Eo n Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Co nditions V CC = 480 V V GE = 15 V V CC = 480 V R G = 1k T j = 125 o C IC = 3 A R G = 1k IC = 3 A V GE = 15 V Min . T yp. 170 540 30 300 Max. Unit ns ns A/s J
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STGD3NB60S
ELECTRICAL CHARACTERISTICS (continued) SWITCHING OFF
Symbo l tc t r (v off ) t d (off) tf E o ff(**) tc t r (v off ) t d (off) tf E o ff(**) Parameter Test Con ditions IC = 3 A V GE = 15 V Min. Typ. 1.8 1.0 3.4 0.72 1.15 2.8 1.45 3.6 1.2 1.8 Max. Unit s s s s mJ s s s s mJ
Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 1 k Delay Time Fall T ime Turn-off Switching Loss Cross-O ver Time V CC = 480 V Off Voltage Rise Time R GE = 10 Delay Time T j = 125 o C Fall T ime Turn-off Switching Loss
IC = 3 A V GE = 15 V
(*) Pulse width limited by max. junction temperature () Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (**)Losses Include Also The Tail (Jedec Standardization)
Thermal Impedance
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STGD3NB60S
Output Characteristics Transfer Characteristics
Transconductance
Collector-Emitter On Voltage vs Temperature
Collector-Emitter On Voltage vs Collector Current
Gate Threshold vs Temperature
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STGD3NB60S
Normalized Breakdown Voltage vs Temperature Capacitance Variations
Gate Charge vs Gate-Emitter Voltage
Total Switching Losses vs Gate Resistance
Total Switching Losses vs Temperature
Total Switching Losses vs Collector Current
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STGD3NB60S
Switching Off Safe Operatin Area
Fig. 1: Gate Charge test Circuit
Fig. 2: Test Circuit For Inductive Load Switching
Fig. 3: Switching Waveforms
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STGD3NB60S
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A" B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
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STGD3NB60S
Information furnished is believed to be accurate and reliable. However, STMicroelect onics assumes no responsibil ity for the consequences r of use of such information nor for any infringement of patents or other rights of third partes which may result from its use. No license is i granted by implication or otherwise under any patent or patent rights of STMicroelectro nics. Specific ation mentioned in this publication are subjec t to change without notice. This publication supersedes and replaces all informaton previously supplied. STMicroelectronics products i are not authorized for use as critical components in life support devices or systems with express written approval of STMicroelectronics. out The ST logo is a trademark of STMicroelectronics (c) 1999 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japa - Malaysia - Malta - Morocco n Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A.
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