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7MBR75SB060
IGBT MODULE (S series) 600V / 75A / PIM
IGBT Modules
Features
* Low VCE(sat) * Compact package * P.C. board mount * Converter diode bridge, Dynamic brake circuit
Applications
* Inverter for motor drive * AC and DC servo drive amplifier * Uninterruptible power supply
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25C unless without specified)
Item Collector-Emitter voltage Gate-Emitter voltage Symbol Condition Rat ing 600 20 75 150 75 300 600 20 50 100 200 600 800 75 525 1378 +150 -40 to +125 AC 2500 AC 2500 3.5 *1 VCES VGES IC Collector current ICP -IC Collector power dissipation PC Collector-Emitter voltage VCES Gate-Emitter voltage VGES Collector current IC ICP Collector power dissipation PC Repetitive peak reverse voltage VRRM Repetitive peak reverse voltage VRRM Average output current IO Surge current (Non-Repetitive) IFSM I 2t (Non-Repetitive) I2 t Operating junction temperature Tj Storage temperature Tstg Isolation between terminal and copper base *2 Viso voltage between thermistor and others *3 Mounting screw torque Inverter Brake Converter Unit V V A A A W V V A A W V V A A A 2s C C V V N*m
Continuous 1ms 1 device
Continuous 1ms 1 device
50Hz/60Hz sine wave Tj=150C, 10ms half sine wave
AC : 1 minute
*1 Recommendable value : 2.5 to 3.5 N*m (M5) *2 All terminals should be connected together when isolation test will be done. *3 Terminal 8 and 9 should be connected together. Terminal 1 to 7 and 10 to 24 should be connected together and shorted to copper base.
IGBT Modules
Electrical characteristics (Tj=25C unless otherwise specified)
Item Zero gate voltage collector current Gate-Emitter leakage current Gate-Emitter threshold voltage Collector-Emitter saturation voltage Input capacitance Turn-on time Symbol ICES IGES VGE(th) VCE(sat) Cies ton tr tr(i) toff tf VF trr ICES IGES VCE(sat) ton tr toff tf IRRM VFM IRRM R B Condition VCE=600V, VGE=0V VCE=0V, VGE=20V VCE=20V, IC=75mA VGE=15V, Ic=75A chip terminal VGE=0V, VCE=10V, f=1MHz VCC=300V IC=75A VGE=15V RG=33 IF=75A chip terminal Min.
7MBR75SB060
Characteristics Typ. Max. 1.0 0.2 5.5 7.8 8.5 1.8 2.1 2.55 7500 0.45 0.25 0.08 0.40 0.05 1.7 2.0 1.2 0.6 1.0 0.35 V 2.7 0.3 1.0 0.2 2.5 1.2 0.6 1.0 0.35 1.0 1.5 1.0 520 3450 s mA A V s Unit mA A V V pF s
Inverter
Turn-off Forward on voltage Reverse recovery time of FRD Zero gate voltage collector current Gate-Emitter leakage current Collector-Emitter saturation voltage Brake Turn-on time Turn-off time Reverse current Forward on voltage
Converter
Thermistor
Reverse current Resistance B value
IF=75A VCES=600V, VGE=0V VCE=0V, VGE=20V IC=50A, VGE=15V chip terminal VCC=300V IC=50A VGE=15V RG=51 VR=600V IF=75A chip terminal VR=800V T=25C T=100C T=25/50C
1.8 2.05 0.45 0.25 0.40 0.05 1.1 1.2 5000 495 3375
mA V mA K
465 3305
Thermal resistance Characteristics
Item Symbol Condition Min. Inverter IGBT Inverter FWD Brake IGBT Converter Diode With thermal compound Characteristics Typ. Max. 0.42 0.90 0.63 0.70 0.05 Unit
Thermal resistance ( 1 device )
Rth(j-c)
C/W
Contact thermal resistance
*
Rth(c-f)
* This is the value which is defined mounting on the additional cooling fin with thermal compound
Equivalent Circuit Schematic
[Converter] 21(P) [B ra k e ] 2 2 (P 1 )
8 9
[In v er ter ]
[Thermistor]
2 0 (G u)
1 8 (G v)
1 6 (G w )
1(R)
2(S)
3(T) 7 (B )
1 9 (E u ) 4 (U )
1 7 (E v ) 5 (V )
1 5 (E w ) 6 (W )
1 4 (G b)
1 3 (G x)
1 2 (G y)
1 1 (G z) 1 0 (E n )
23(N)
2 4 (N 1 )
IGBT Modules
Characteristics (Representative)
7MBR75SB060
[ Inverter ] Collector current vs. Collector-Emitter voltage
200
[ Inverter ] Collector current vs. Collector-Emitter voltage
200
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 150 Collector current : Ic [ A ]
15V
12V 150 Collector current : Ic [ A ]
VGE= 20V
15V
12V
100
100
50 10V
50
10V
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Inverter ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
200 10
[ Inverter ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
Tj= 25 C 150 Collector current : Ic [ A ]
o
Tj= 125 C Collector - Emitter voltage : VCE [ V ]
o
8
6
100
4
50
Ic=150A 2 Ic= 75A Ic= 37.5A
0 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Inverter ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
30000
o
[ Inverter ] Dynamic Gate charge (typ.) Vcc=300V, Ic=75A, Tj= 25
500
o
C
C
25
10000 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ]
400
20 Gate - Emitter voltage : VGE [ V ]
300
15
1000 Coes Cres
200
10
100
5
100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 100 200 300 400 Gate charge : Qg [ nC ]
0 500
IGBT Modules
7MBR75SB060
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj=25C
1000 1000
[ Inverter ] Switching time vs. Collector current (typ.) Vcc=300V, VGE=15V, Rg=33, Tj=125C
ton toff Switching time : ton, tr, toff, tf [ nsec ] Switching time : ton, tr, toff, tf [ nsec ] tr
ton toff tr
100
100
tf
tf
10 0 50 100 150 Collector current : Ic [ A ]
10 0 50 100 150 Collector current : Ic [ A ]
[ Inverter ] Switching time vs. Gate resistance (typ.)
5000
[ Inverter ] Switching loss vs. Collector current (typ.)
8
Vcc=300V, Ic=75A, VGE=15V, Tj=25C
Vcc=300V, VGE=15V, Rg=33
ton Switching loss : Eon, Eoff, Err [ mJ/pulse ] toff tr Eon(125 C) Eoff(125 C)
o o o
Switching time : ton, tr, toff, tf [ nsec ]
1000
6
Eon(25 C) 4 Eoff(25 C)
o
100
tf
2 Err(125 C)
o
Err(25 C) 10 10 Gate resistance : Rg [ 100
]
o
0 300 0 50 100 150 Collector current : Ic [ A ]
[ Inverter ] Switching loss vs. Gate resistance (typ.)
[ Inverter ] Reverse bias safe operating area
200
Vcc=300V, Ic=75A, VGE=15V, Tj=125C
15
+VGE=15V, -VGE<15V, Rg>33, Tj<125C = = =
Eon Switching loss : Eon, Eoff, Err [ mJ/pulse ] 150 Collector current : Ic [ A ] 300 10
100
Eoff 5
50
Err 0 10 Gate resistance : Rg [ 100
]
0 0 200 400 600 800 Collector - Emitter voltage : VCE [ V ]
IGBT Modules
7MBR75SB060
[ Inverter ] Forward current vs. Forward on voltage (typ.)
200 300
[ Inverter ] Reverse recovery characteristics (typ.)
Vcc=300V, VGE=15V, Rg=33
150 Reverse recovery time : trr [ nsec ] Reverse recovery current : Irr [ A ] Tj=125 C Forward current : IF [ A ] Tj=25 C
o o
trr(125 C) 100
o
trr(25 C)
o
o
100
Irr(125 C) Irr(25 C)
o
50
0 0 1 2 3 Forward on voltage : VF [ V ]
10 0 50 100 150 Forward current : IF [ A ]
[ Converter ] Forward current vs. Forward on voltage (typ.)
200
150 Forward current : IF [ A ]
Tj= 25 C
o
Tj= 125 C
o
100
50
0 0.0
0.4
0.8
1.2
1.6
2.0
Forward on voltage : VFM [ V ]
Transient thermal resistance
5 200 100
[ Thermistor ] Temperature characteristic (typ.)
Thermal resistanse : Rth(j-c) [ C/W ]
1
FWD[Inverter] Conv. Diode Resistance : R [ k ] 1 IGBT[Brake] IGBT[Inverter] 10
o
0.1
1
0.01 0.001
0.01
0.1
0.1 -60
-40
-20
0
20
40
60
80
o
100
120
140
160
180
Pulse width : Pw [ sec ]
Temperature [
C]
IGBT Modules
7MBR75SB060
[ Brake ] Collector current vs. Collector-Emitter voltage
120
[ Brake ] Collector current vs. Collector-Emitter voltage
120
Tj= 25 C (typ.)
o
Tj= 125 C (typ.)
o
VGE= 20V 100
15V
12V 100
VGE= 20V
15V
12V
Collector current : Ic [ A ]
60
Collector current : Ic [ A ]
80
80
60
40
40 10V
20
10V
20
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
0 0 1 2 3 4 5 Collector - Emitter voltage : VCE [ V ]
[ Brake ] Collector current vs. Collector-Emitter voltage VGE=15V (typ.)
120 10
[ Brake ] Collector-Emitter voltage vs. Gate-Emitter voltage Tj= 25 C (typ.)
o
100
Tj= 25 C
o
Tj= 125 C 8 Collector - Emitter voltage : VCE [ V ]
o
Collector current : Ic [ A ]
80
6
60
4
40
Ic=100A 2 Ic= 50A Ic= 25A
20
0 0 1 2 3 4 Collector - Emitter voltage : VCE [ V ]
0 5 10 15 20 25 Gate - Emitter voltage : VGE [ V ]
[ Brake ] Capacitance vs. Collector-Emitter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25
20000
o
[ Brake ] Dynamic Gate charge (typ.) Vcc=300V, Ic=50A, Tj= 25
500
o
C
C
25
10000 400 Capacitance : Cies, Coes, Cres [ pF ] Cies Collector - Emitter voltage : VCE [ V ] 20 Gate - Emitter voltage : VGE [ V ]
300
15
1000
200
10
Coes Cres
100
5
100 0 5 10 15 20 25 30 35 Collector - Emitter voltage : VCE [ V ]
0 0 50 100 150 200 250 Gate charge : Qg [ nC ]
0 300
IGBT Modules
7MBR75SB060
M712
Outline Drawings, mm
8-R2.250.3 4-o5.50.3 13.09 15.24
21 20
1221 1100.3 19.05
19 18
94.50.3 19.05
17 16
15.24
15 14
3.81
4=15.24
10
11.5
+0.5 0
19.697
3.81 99.60.3
9
621 500.3 11.43 11.43
22
11.5 39.90.3 3.81 15.475 15.24
23
+0.5 0
7
11.665
3.81
24
1
2
3
4
5
6
4.198
4.055
14.995
15.24
15.24
15.24
15.24
15.24
A A 22.86
1.50.3
o0.4
o2.50.1
0.80.2
o2.10.1
3.50.5 1.10.3
Section A-A
10.2
2.90.3 6.50.5
20.51 171
Shows theory dimensions
60.3
1.150.2
57.50.3
3.81
8

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