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PD- 91880 SMPS MOSFET IRFP460A HEXFET(R) Power MOSFET Applications Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l VDSS 500V Rds(on) max 0.27 ID 20A Benefits Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate, Avalanche and dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche Voltage and Current l Effective Coss specified ( See AN1001) l TO-247AC G D S Absolute Maximum Ratings Parameter ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torqe, 6-32 or M3 screw Max. 20 13 80 280 2.2 30 3.8 -55 to + 150 300 (1.6mm from case ) 10 lbf*in (1.1N*m) Units A W W/C V V/ns C Typical SMPS Topologies: l l Full Bridge PFC Boost Notes through are on page 8 www.irf.com 1 6/23/99 IRFP460A Static @ TJ = 25C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Min. Typ. Max. Units Conditions 500 --- --- V VGS = 0V, I D = 250A --- 0.61 --- V/C Reference to 25C, ID = 1mA --- --- 0.27 VGS = 10V, ID = 12A 2.0 --- 4.0 V VDS = VGS , ID = 250A --- --- 25 VDS = 500V, VGS = 0V A --- --- 250 VDS = 400V, VGS = 0V, T J = 125C --- --- 100 VGS = 30V nA --- --- -100 VGS = -30V Dynamic @ TJ = 25C (unless otherwise specified) gfs Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Coss Coss Coss eff. Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance Min. 11 --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- --- --- --- 18 55 45 39 3100 480 18 4430 130 140 Max. Units Conditions --- S VDS = 50V, ID = 12A 105 ID = 20A 26 nC VDS = 400V 42 VGS = 10V, See Fig. 6 and 13 --- VDD = 250V --- ID = 20A ns --- RG = 4.3 --- R D = 13,See Fig. 10 --- VGS = 0V --- VDS = 25V --- pF = 1.0MHz, See Fig. 5 --- VGS = 0V, VDS = 1.0V, = 1.0MHz --- VGS = 0V, VDS = 400V, = 1.0MHz --- VGS = 0V, VDS = 0V to 400V Avalanche Characteristics Parameter EAS IAR EAR Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Typ. --- --- --- Max. 960 20 28 Units mJ A mJ Thermal Resistance Parameter RJC RCS RJA Junction-to-Case Case-to-Sink, Flat, Greased Surface Junction-to-Ambient Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Typ. --- 0.24 --- Max. 0.45 --- 40 Units C/W Diode Characteristics Min. Typ. Max. Units IS ISM VSD trr Qrr ton Conditions D MOSFET symbol 20 --- --- showing the A G integral reverse --- --- 80 S p-n junction diode. --- --- 1.8 V TJ = 25C, IS = 20A, VGS = 0V --- 480 710 ns TJ = 25C, IF = 20A --- 5.0 7.5 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) 2 www.irf.com IRFP460A 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP 10 1 4.5V 20s PULSE WIDTH TJ = 25 C 1 10 100 4.5V 0.1 0.1 1 1 10 20s PULSE WIDTH TJ = 150 C 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 3.0 20A ID = 19A RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 C 10 2.5 2.0 TJ = 25 C 1.5 1 1.0 0.5 0.1 4.0 V DS = 50V 20s PULSE WIDTH 5.0 6.0 7.0 8.0 9.0 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com 3 IRFP460A 100000 VGS , Gate-to-Source Voltage (V) 10000 V G S = 0V, f = 1M Hz C is s = C g s + C g d , Cd s SHO RTED C rs s = C g d C oss = C ds + C gd 20 20A ID = 19A 16 VDS = 400V VDS = 250V VDS = 100V C, Capacitance (pF) C iss 1000 12 C o ss 100 8 10 C rss 4 1 1 10 100 1000 A 0 0 20 40 FOR TEST CIRCUIT SEE FIGURE 13 60 80 100 V D S , D ra in-to-S ource V oltage (V) Q G , Total Gate Charge (nC) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage 100 1000 OPERATION IN THIS AREA LIMITED BY RDS(on) ISD , Reverse Drain Current (A) 10 I D , Drain Current (A) TJ = 150 C 100 10us TJ = 25 C 1 100us 10 1ms 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1 TC = 25 C TJ = 150 C Single Pulse 10 100 10ms 1000 10000 VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4 www.irf.com IRFP460A 20 VDS VGS RD D.U.T. + I D , Drain Current (A) 15 RG -VDD 10V 10 Pulse Width 1 s Duty Factor 0.1 % Fig 10a. Switching Time Test Circuit 5 VDS 90% 0 25 50 75 100 125 150 TC , Case Temperature ( C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms 1 Thermal Response (Z thJC ) D = 0.50 0.20 0.10 0.05 0.02 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 0.1 0.01 0.001 0.00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFP460A 2400 EAS , Single Pulse Avalanche Energy (mJ) 1 5V TOP BOTTOM 2000 VDS L D R IV E R ID 8.9A 13A 20A 1600 RG 20V tp D .U .T IA S + V - DD A 1200 0 .0 1 Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp 800 400 0 25 50 75 100 125 150 Starting TJ , Junction Temperature( C) IAS Fig 12b. Unclamped Inductive Waveforms QG Fig 12c. Maximum Avalanche Energy Vs. Drain Current 10 V QGS VG QGD V D S a v , A valanche V oltage (V ) 620 600 Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 580 50K 12V .2F .3F 560 D.U.T. VGS 3mA + V - DS 540 0 4 8 12 16 20 A I av , A v alanche C urrent (A) IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current 6 www.irf.com IRFP460A Peak Diode Recovery dv/dt Test Circuit D.U.T + + Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer - + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test + VDD Driver Gate Drive P.W. Period D= P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt VDD Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS www.irf.com 7 IRFP460A Package Outline TO-247AC Outline Dimensions are shown in millimeters (inches) 1 5.9 0 (.6 2 6) 1 5.3 0 (.6 0 2) -B3.6 5 (.1 43 ) 3.5 5 (.1 40 ) 0 .25 (.0 1 0 ) M -A5 .50 (.21 7 ) 2 0 .3 0 (.8 0 0) 1 9 .7 0 (.7 7 5) 1 2 3 -C1 4 .8 0 (.5 8 3 ) 1 4 .2 0 (.5 5 9 ) 4 .3 0 (.1 70 ) 3 .7 0 (.1 45 ) LE A D A S S IG N M E N TS 1 2 3 4 G A TE DR A IN SOURC E DR A IN -DDBM 5 .3 0 ( .2 0 9 ) 4 .7 0 ( .1 8 5 ) 2 .5 0 (.0 8 9) 1 .5 0 (.0 5 9) 4 2X 5 .50 (.2 1 7 ) 4 .50 (.1 7 7 ) NOTES: 1 D IM E N S IO N ING & TO LE R A N C IN G P E R A N S I Y 14 .5M , 198 2. 2 C O N T R O L LIN G D IM E N S IO N : IN C H . 3 C O N F O R M S TO JE D E C O U TL IN E T O -24 7-A C . 2 .4 0 ( .0 9 4 ) 2 .0 0 ( .0 7 9 ) 2X 5 .4 5 ( .2 1 5 ) 2X 1 .4 0 (.0 56 ) 3 X 1 .0 0 (.0 39 ) 0 .2 5 (.0 10 ) M 3 .4 0 (.1 33 ) 3 .0 0 (.1 18 ) C AS 0 .8 0 (.0 3 1) 3 X 0 .4 0 (.0 1 6) 2 .6 0 (.1 0 2 ) 2 .2 0 (.0 8 7 ) Part Marking Information TO-247AC E X A M P L E : T H IS IS A N IR F P E 30 W IT H A S S E M B L Y LOT COD E 3A1Q A I N T E R N A T IO N A L R E C T IF IE R LOGO P AR T N UM B E R IR F P E 3 0 3A1Q 9302 DATE CO DE (Y Y W W ) YY = YE A R W W W EEK ASSEMBLY LOT COD E Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS Starting TJ = 25C, L = 4.3mH RG = 25, IAS = 20A. (See Figure 12) ISD 20A, di/dt 125A/s, VDD V(BR)DSS, TJ 150C WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 6/99 8 www.irf.com |
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