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| BC 817-16W NPN Silicon AF Transistor * For general AF applications * High collector current * High current gain * Low collector-emitter saturation voltage * Complementary types: BC807W, BC808W (PNP) Type BC 817-16W BC 817-25W BC 817-40W BC 818-16W BC 818-25W BC 818-40W Marking Ordering Code 6As 6Bs 6Cs 6Es 6Fs 6Gs Q62702-C2320 Q62702-C2278 Q62702-C2321 Q62702-C2322 Q62702-C2323 Q62702-C2324 Pin Configuration 1=B 1=B 1=B 1=B 1=B 1=B 2=E 2=E 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C 3=C 3=C Package SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 SOT-323 Maximum Ratings Parameter Collector-emitter voltage BC 817 W BC 818 W Collector-base voltage BC 817 W BC 818 W Emitter-base voltage DC collector current Peak collector current Base current Total power dissipation, TS = 130C Junction temperature Storage temperature Thermal Resistance Junction ambient 1) Symbol Values 45 25 Unit V VCEO VCBO 50 30 VEBO IC ICM IB Ptot Tj Tstg RthJA RthJS 1 5 500 1 100 250 150 - 65 ... + 150 215 80 mA A mA mW C K/W Junction - soldering point 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Dec-19-1996 BC 817-16W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 45 25 160 250 350 100 50 100 V IC = 10 mA, IB = 0 , BC 817 W IC = 10 mA, IB = 0 , BC 818 W Collector-base breakdown voltage V(BR)CBO 50 30 IC = 10 A, IB = 0 , BC 817 W IC = 10 A, IB = 0 , BC 818 W Base-emitter breakdown voltage V(BR)EBO 5 IE = 10 A, IC = 0 Collector-base cutoff current ICBO nA A nA 100 160 250 60 100 170 250 400 630 V 0.7 1.2 VCB = 25 V, TA = 25 C VCB = 25 V, TA = 150 C Emitter cutoff current IEBO hFE VEB = 4 V, IC = 0 DC current gain IC = 100 mA, VCE = 1 V, BC ... 16 W IC = 100 mA, VCE = 1 V, BC ... 25 W IC = 100 mA, VCE = 1 V, BC ... 40 W IC = 300 mA, VCE = 1 V, BC ... 16 W IC = 300 mA, VCE = 1 V, BC ... 25 W IC = 300 mA, VCE = 1 V, BC ... 40 W Collector-emitter saturation voltage 1) VCEsat VBEsat - IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 500 mA, IB = 50 mA 1) Pulse test: t < 300s; D < 2% Semiconductor Group 2 Dec-19-1996 BC 817-16W NPN Silicon AF Transistor Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 170 6 60 - MHz pF - IC = 50 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance Ccb Ceb - VCB = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Semiconductor Group 3 Dec-19-1996 BC 817-16W Total power dissipation Ptot = f (TA*;TS) * Package mounted on epoxy Permissible Pulse Load RthJS = f(tp) 300 10 3 K/W mW Ptot 200 TS RthJS 10 2 150 TA 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 100 10 0 50 0 0 20 40 60 80 100 120 C 150 TA ,TS 10 -1 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Permissible Pulse Load Ptotmax / PtotDC = f(tp) Collectot cutoff current ICBO = f (TA) VCB = 60V 10 3 - Ptotmax/PtotDC 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 4 Dec-19-1996 BC 817-16W DC current gain hFE = f (IC) VCE = 1V Transition frequency fT = f (IC) VCE = 5V Base-emitter saturation voltage IC = f (VBEsat), hFE = 10 Collector-emitter saturation voltage IC = f (VCEsat), hFE = 10 Semiconductor Group 5 Dec-19-1996 |
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