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| DTA144VUA / DTA144VKA / DTA144VSA Transistors Digital transistor (built-in resistors) DTA144VUA / DTA144VKA / DTA144VSA !Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. !External dimensions (Units : mm) DTA144VUA (1) 0.65 0.65 0.3 (3) 1.25 2.1 0.2 (2) 1.3 2.0 0.1to0.4 0to0.1 ROHM : UMT3 EIAJ : SC-70 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) 0.15 Each lead has same dimensions (1) DTA144VKA 0.7 (3) 0.4 !Equivalent circuit 0.15 IN R1 R2 1.6 2.8 0.95 0.95 1.9 2.9 (2) 0.9 OUT ROHM : SMT3 EIAJ : SC-59 GND(+) OUT GND(+) 0.3to0.6 0to0.1 (1) Emitter(Source) (2) Base(Gate) (3) Collector(Drain) Each lead has same dimensions IN DTA144VSA 3 4 2 (15Min.) 3Min. 0.45 0.8 1.1 2.5 5 0.5 0.45 ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base (1) (2) (3) Taping specifications !Absolute maximum ratings (Ta = 25C) Parameter Supply voltage Input voltage Output current DTA144VUA / DTA144VKA Power dissipation DTA144VSA Junction temperature Storage temperature Symbol VCC VI IO IC(Max.) Pd Tj Tstg Limits -50 -40~+15 -30 -10 200 300 150 -55~+150 Unit V V mA mW C C !Packaging, marking and packaging specifications Type Package Marking Packaging code Basic ordering unit (pieces) DTA144VUA UMT3 156 T106 3000 DTA144VKA SMT3 E56 T146 3000 DTA144VSA SPT - TP 5000 !Electrical characteristics (Ta = 25C) Parameter Input voltage Output voltage Input current Output current DC current gain Input resistance Resistance ratio Symbol VI(off) VI(on) VO(on) II IO(off) GI R1 R2/R1 fT Min. - -6 - - - 33 32.9 0.17 - Typ. - - -0.1 - - - 47 0.21 250 Max. -1 - -0.3 -0.16 -0.5 - 61.1 0.26 - Unit V V mA A - k - MHz Conditions VCC=-5V , IO=-100A VO=-0.3V , IO=-2mA IO=-10mA , II=-0.5mA VI=-5V VCC=-50V , VI=0V IO=-5mA , VO=-5V - - VCE=-10V , IE=5mA , f=100MHz Transition frequency Transition frequency of the device. |
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