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| Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 Features * Usable Gain to 6.0 GHz * High Gain: 32.5 dB Typical at 0.1 GHz 22.5 dB Typical at 1.0 GHz * Low Noise Figure: 3.3 dB Typical at 1.0 GHz * Low Cost Plastic Package purpose 50 gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications. The MSA-series is fabricated using HP's 10 GHz fT, 25 GHz f MAX, silicon bipolar MMIC process which uses nitride self-alignment, ion implantation, and gold metallization to achieve excellent performance, uniformity and reliability. The use of an external bias resistor for temperature and current stability also allows bias flexibility. 85 Plastic Package Description The MSA-0885 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit (MMIC) housed in a low cost plastic package. This MMIC is designed for use as a general Typical Biasing Configuration R bias VCC > 10 V RFC (Optional) 4 C block 3 IN 1 MSA C block OUT Vd = 7.8 V 2 5965-9545E 6-422 MSA-0885 Absolute Maximum Ratings Parameter Device Current Power Dissipation[2,3] RF Input Power Junction Temperature Storage Temperature Absolute Maximum[1] 65 mA 500 mW +13 dBm 150C -65C to 150C Thermal Resistance[2,4]: jc = 130C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.7 mW/C for TC > 85C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications[1], TA = 25C Symbol GP Parameters and Test Conditions: Id = 36 mA, ZO = 50 Power Gain (|S21| 2) Input VSWR Output VSWR 50 Noise Figure Output Power at 1 dB Gain Compression Third Order Intercept Point Group Delay Device Voltage Device Voltage Temperature Coefficient f = 0.1 GHz f = 1.0 GHz f = 0.1 to 3.0 GHz f = 0.1 to 3.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz f = 1.0 GHz Units dB Min. 21.0 Typ. 32.5 22.5 1.9:1 1.6:1 Max. VSWR NF P1 dB IP3 tD Vd dV/dT dB dBm dBm psec V mV/C 6.2 3.3 12.5 27.0 125 7.8 -17.0 9.4 Note: 1. The recommended operating current range for this device is 20 to 40 mA. Typical performance as a function of current is on the following page. 6-423 MSA-0885 Typical Scattering Parameters[1] (ZO = 50 , TA = 25C, Id = 36 mA) Freq. GHz S11 Mag Ang dB S21 Mag Ang dB S12 Mag Ang Mag S22 Ang k 0.1 0.2 0.4 0.6 0.8 1.0 1.5 2.0 2.5 3.0 3.5 4.0 5.0 6.0 .64 .58 .44 .36 .31 .27 .24 .26 .29 .34 .38 .42 .48 .60 -21 -39 -65 -82 -95 -105 -125 -147 -159 -175 172 161 135 102 32.5 31.3 28.7 26.3 24.3 22.5 19.3 16.7 14.9 13.1 11.6 10.1 7.7 5.5 42.29 36.89 27.20 20.57 16.31 13.36 9.24 6.82 5.57 4.51 3.80 3.21 2.43 1.88 160 144 120 106 96 87 71 56 48 37 25 14 -7 -29 -36.5 -32.8 -29.4 -27.2 -25.2 -24.2 -21.4 -19.7 -18.4 -17.7 -16.9 -16.3 -15.6 -14.9 .015 .023 .034 .044 .055 .061 .085 .103 .120 .130 .144 .153 .167 .179 40 50 54 53 53 51 50 47 44 42 37 33 24 17 .61 .54 .42 .33 .28 .25 .18 .15 .12 .09 .06 .04 .09 .08 -24 -45 -77 -98 -115 -129 -153 -173 180 165 172 -139 -90 -140 0.78 0.67 0.69 0.77 0.83 0.87 0.96 0.98 1.00 1.03 1.04 1.06 1.09 1.06 Note: 1. A model for this device is available in the DEVICE MODELS section. Typical Performance, TA = 25C (unless otherwise noted) 35 30 Gain Flat to DC 25 G p (dB) Id (mA) 40 TC = +85C TC = +25C TC = -25C 35 0.1 GHz 30 0.5 GHz 25 G p (dB) 30 20 15 10 1.0 GHz 20 2.0 GHz 15 20 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) 0 0 2 4 6 Vd (V) 8 10 10 5 10 4.0 GHz 20 30 I d (mA) 40 Figure 1. Typical Power Gain vs. Frequency, Id = 36 mA. Figure 2. Device Current vs. Voltage. Figure 3. Power Gain vs. Current. Gp (dB) 23 22 21 GP 13 P1 dB 12 11 4 3 2 -25 0 +25 +55 +85 TEMPERATURE (C) NF P1 dB (dBm) P1 dB (dBm) 16 I d = 40 mA 14 12 10 8 I d = 36 mA NF (dB) 4.5 4.0 I d = 20 mA I d = 36 mA I d = 40 mA 3.5 3.0 6 I d = 20 mA 2.5 0.2 0.3 0.5 1.0 2.0 4.0 0.1 0.2 0.3 0.5 1.0 2.0 FREQUENCY (GHz) FREQUENCY (GHz) NF (dB) 4 0.1 Figure 4. Output Power at 1 dB Gain Compression, NF and Power Gain vs. Case Temperature, f = 1.0 GHz, Id=36mA. Figure 5. Output Power at 1 dB Gain Compression vs. Frequency. Figure 6. Noise Figure vs. Frequency. 6-424 85 Plastic Package Dimensions .020 .51 GROUND 4 0.143 0.015 3.63 0.38 1 RF INPUT A08 45 3 RF OUTPUT AND BIAS Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 .006 .002 .15 .05 GROUND .085 2.15 2 .060 .010 1.52 .25 5 TYP. .07 0.43 .286 .030 7.36 .76 6-425 |
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