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| MSC82010 RF & MICROWAVE TRANSISTORS GENERAL PURPOSE AMPLIFIER APPLICATIONS .EMI .VSWR .HERMETI .P T TER BALLASTED CAPABILITY :1 @ RATED CONDITIONS C STRIPAC (R) PACKAGE OUT = 10 W MIN. WITH 5.2 dB GAIN @ 2.0 GHz .250 2LFL (S010) hermetically sealed ORDER CODE MSC82010 BRANDING 82010 PIN CONNECTION DESCRIPTION The MSC82010 is a common base hermetically sealed silicon NPN microwave transistor utilizing a fishbone emitter ballasted geometry with a refractory/gold metallization system. This device is capable of withstanding an infinite load VSWR at any phase angle under rated rated conditions. The MSC82010 was designed for Class C amplifier applications in the 1.0 - 2.0 GHz frequency range. ABSOLUTE MAXIMUM RATINGS (T case = 25 C) Symbol Parameter Value Unit 1. Collector 2. Base 3. Emitter 4. Base PDISS IC VCC TJ T STG Power Dissipation* Device Current* Collector-Supply Voltage* Junction Temperature Storage Temperature 35 1.5 35 200 - 65 to +200 W A V C C THERMAL DATA RTH(j-c) Junction-Case Thermal Resistance* 5.0 C/W *Applies only to rated RF amplifier operation October 1992 1/5 MSC82010 ELECTRICAL SPECIFICATIONS (T case = 25 C) STATIC Symbol Test Conditions Value Min. Typ. Max. Unit BVCBO BVEBO BVCER I CBO hFE DYNAMIC Symbol IC = 5mA IE = 1mA IC = 15mA VCB = 28V VCE = 5V IE = 0mA IC = 0mA RBE = 10 IC = 1000mA 45 3.5 45 -- 15 -- -- -- -- -- -- -- -- 5.0 120 V V V mA -- Test Conditions Value Min. Typ. Max. Unit POUT c GP COB f = 2.0 GHz f = 2.0 GHz f = 2.0 GHz f = 1 MHz PIN = 3.0 W PIN = 3.0 W PIN = 3.0 W VCB = 28 V VCC = 28 V VCC = 28 V VCC = 28 V 10 35 5.2 -- 11.5 38 5.8 -- -- -- -- 19 W % dB pF TYPICAL PERFORMANCE POWER OUTPUT vs FREQUENCY COLLECTOR EFFICIENCY vs FREQUENCY RELATIVE POWER OUTPUT vs COLLECTOR VOLTAGE 2/5 MSC82010 IMPEDANCE DATA TYPICAL INPUT IMPEDANCE ZIN PIN = 3.0 W VCC = 28 V Normalized to 50 ohms FREQ. 1.0 GHz 1.5 GHz 1.7 GHz 2.0 GHz ZIN () 1.7 + j 4.2 2.0 + j 7.2 2.2 + j 8.8 2.4 + j 12.0 ZCL () 5.7 + j 1.9 2.8 - j 5.0 2.5 - j 7.8 2.0 - j 12.0 TYPICAL COLLECTOR LOAD IMPEDANCE ZCL POUT = Saturated VCC = 28 V Normalized to 50 ohms 3/5 MSC82010 TEST CIRCUIT Ref.: Dwg. No. C125518 All dimensions are in inches. Frequency 2.0 GHz RF Amplifier Power Output Test PACKAGE MECHANICAL DATA 4/5 MSC82010 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 5/5 |
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