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| TLE 4264 G 5-V Low-Drop Fixed-Voltage Regulator TLE 4264 G Features q q q q q q q Output voltage tolerance 2 % Low-drop voltage Very low current consumption Overtemperature protection Short-circuit proof Suitable for use in automotive electronics Reverse polarity P-SOT223-4-1 Type TLE 4264 G Functional Description Ordering Code Q67006-A9139 Package P-SOT223-4-1 (SMD) TLE 4264 G is a 5-V low-drop fixed-voltage regulator in an SOT-223 package. The IC regulates an input voltage VI in the range 5.5 V < VI < 45 V to VQrated = 5.0 V. The maximum output current is more than 120 mA. This IC is shortcircuit-proof and features temperature protection that disables the circuit at overtemperature. Dimensioning Information on External Components The input capacitor Ci is necessary for compensating line influences. Using a resistor of approx. 1 in series with Ci, the oscillating of input inductivity and input capacitance can be clamped. The output capacitor CQ is necessary for the stability of the regulating circuit. Stability is guaranteed at values CQ 10 F and an ESR 10 within the operating temperature range. Semiconductor Group 1 1998-11-01 TLE 4264 G Pin Configuration (top view) 4 1 2 3 V GND VQ AEP01526 Pin Definitions and Functions Pin 1 2, 4 3 Symbol Function Input voltage; block to ground directly on IC with ceramic capacitor Ground 5-V output voltage; block to ground with 10-F capacitor, ESR < 10 VI GND VQ Circuit Description The control amplifier compares a reference voltage, which is kept highly precise by resistance adjustment, to a voltage that is proportional to the output voltage and drives the base of the series transistor via a buffer. Saturation control, working as a function of load current, prevents any over-saturation of the power element. The IC is additionally protected against overload, overtemperature and reverse polarity. Semiconductor Group 2 1998-11-01 TLE 4264 G Temperature Sensor Saturation Control and Protection Circuit 3 Control Amplifier Input 1 Output Buffer Adjustment Bandgap Reference 2,4 GND AEB01527 Block Diagram Semiconductor Group 3 1998-11-01 TLE 4264 G Absolute Maximum Ratings Tj = - 40 to 150 C Parameter Symbol Limit Values min. Input Input voltage Input current Output Output voltage Output current Ground Current Temperatures Junction temperature Storage temperature Operating Range Input voltage Junction temperature Thermal Resistances System-air System-case max. Unit Notes VI II - 42 - 45 - V - - limited internally VQ IQ -1 - 16 - V - - limited internally IGND 50 - mA - Tj Tstg - - 50 150 150 C C - - VI Tj 5.5 - 40 45 150 V C - - Rth SA Rth SC - - 100 25 K/W K/W soldered in - Semiconductor Group 4 1998-11-01 TLE 4264 G Characteristics VI = 13.5 V; - 40 C Tj 125 C, unless specified otherwise Parameter Symbol Limit Values min. Output voltage Output-current limiting typ. 5.0 max. 5.1 V 5 mA IQ 100 mA 6 V VI 28 V - Unit Test Conditions VQ 4.9 IQ 120 - - - - - - 150 - 10 0.25 - 15 54 - 400 15 0.5 40 30 - mA A mA V mV mV dB Current consumption Iq = II - IQ Iq Current consumption Iq = II - IQ Iq Drop voltage Load regulation Supply-voltage regulation Supply voltage suppression 1) IQ = 1 mA IQ = 100 mA IQ = 100 mA1) IQ = 5 to 100 mA VI = 6 V VI = 6 to 28 V IQ = 5 mA fr = 100 Hz Vr = 0.5 Vpp Vdr VQ VQ SVR Drop voltage = VI - VQ (measured where VQ has dropped 100 mV from the nominal value obtained at VI = 13.5 V) Semiconductor Group 5 1998-11-01 TLE 4264 G Input 5.5 to 45 V 1 3 Output Ci TLE 4264G 2,4 10 F AES01528 Application Circuit Semiconductor Group 6 1998-11-01 TLE 4264 G Drop Voltage VDr versus Output Current IQ V Dr 800 mV 700 600 Current Consumption Iq versus Input Voltage Vi 15 AED01979 q mA 10 500 Tj = 125 C R L = 50 400 300 5 200 Tj = 25 C R L = 100 100 0 25 0 50 75 100 125 mA 175 0 10 20 30 40 V 50 Q Vi Current Consumption Iq versus Output Current IQ 12 AED01980 Current Consumption Iq versus Output Current IQ 3.0 AED01981 q mA 10 q mA 2.5 8 2.0 Vi = 13.5 V 6 1.5 4 1.0 Vi = 13.5 V 2 0.5 0 0 50 100 mA 150 0 0 5 10 15 20 Q 30 mA Q Semiconductor Group 7 1998-11-01 TLE 4264 G Output Voltage VQ versus Temperature Tj 5.20 AED01982 Output Current IQ versus Input Voltage Vi 200 AED01983 VQ V 5.10 Q mA Vi = 13.5 V 150 Tj = 25 C 5.00 4.90 100 Tj = 125 C 4.80 50 4.70 4.60 -40 0 40 80 120 C 160 Tj 0 0 10 20 30 40 V 50 Vi Output Voltage VQ versus Input Voltage Vi 6 AED01984 VQ V 5 R L = 50 4 3 2 1 0 0 2 4 6 8 V 10 Vi Semiconductor Group 8 1998-11-01 TLE 4264 G Package Outlines P-SOT223-4-1 (Plastic Small Outline Transistor) A 6.5 0.2 3 0.1 B 4 +0.2 acc. to DIN 6784 0.1 max 1.6 0.1 7 0.3 15max 1 0.7 0.1 2 3 2.3 4.6 0.5 min 0.28 0.04 0.25 M A 0.25 M B GPS05560 Weight approx. 0.15 g Sorts of Packing Package outlines for tubes, trays etc. are contained in our Data Book "Package Information" SMD = Surface Mounted Device Semiconductor Group 9 3.5 0.2 Dimensions in mm 1998-11-01 |
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