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| BUZ 102AL SIPMOS (R) Power Transistor * N channel * Enhancement mode * Avalanche-rated * Logic Level * dv/dt rated * Low on-resistance * 175 C operating temperature * also in TO-220 SMD available Pin 1 G Pin 2 D Pin 3 S Type BUZ 102AL VDS 50 V ID 42 A RDS(on) 0.028 Package TO-220 AB Ordering Code C67078-S1356-A2 Maximum Ratings Parameter Continuous drain current Symbol Values 42 Unit A ID IDpuls 168 TC = 97 C Pulsed drain current TC = 25 C Avalanche energy, single pulse EAS 180 dv/dt 6 mJ ID = 42 A, VDD = 25 V, RGS = 25 L = 102 H, Tj = 25 C Reverse diode dv/dt kV/s IS = 42 A, VDS = 40 V, diF/dt = 200 A/s Tjmax = 175 C Gate source voltage Gate-source peak voltage,aperiodic Power dissipation VGS Vgs Ptot 14 20 V W TC = 25 C 200 Semiconductor Group 1 07/96 BUZ 102AL Maximum Ratings Parameter Operating temperature Storage temperature Thermal resistance, chip case Thermal resistance, chip to ambient DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 175 -55 ... + 175 0.83 75 E 55 / 175 / 56 K/W Unit C Tj Tstg RthJC RthJA Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS 50 1.6 0.1 1 10 10 0.02 2 1 100 100 100 V VGS = 0 V, ID = 0.25 mA, Tj = -40 C Gate threshold voltage VGS(th) 1.2 VGS=VDS, ID = 1 mA Zero gate voltage drain current IDSS A nA A nA 0.028 VDS = 50 V, VGS = 0 V, Tj = 25 C VDS = 50 V, VGS = 0 V, Tj = -40 C VDS = 50 V, VGS = 0 V, Tj = 150 C Gate-source leakage current IGSS RDS(on) VGS = 20 V, VDS = 0 V Drain-Source on-resistance VGS = 5 V, ID = 21 A Semiconductor Group 2 07/96 BUZ 102AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 10 35 1750 550 240 - S pF 2330 825 360 ns 30 45 VDS 2 * ID * RDS(on)max, ID = 21 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Rise time tr 135 205 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Turn-off delay time td(off) 330 440 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Fall time tf 110 150 VDD = 30 V, VGS = 5 V, ID = 3 A RGS = 50 Semiconductor Group 3 07/96 BUZ 102AL Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TC = 25 C Inverse diode direct current,pulsed A 1.2 85 120 42 168 V 1.7 ns C Values typ. max. Unit ISM VSD trr Qrr TC = 25 C Inverse diode forward voltage VGS = 0 V, IF = 84 A Reverse recovery time VR = 30 V, IF=lS, diF/dt = 100 A/s Reverse recovery charge VR = 30 V, IF=lS, diF/dt = 100 A/s Semiconductor Group 4 07/96 BUZ 102AL Power dissipation Ptot = (TC) Drain current ID = (TC) parameter: VGS 5 V 45 A 220 W Ptot 180 160 ID 35 30 140 120 100 80 60 10 40 5 20 0 0 0 20 40 60 80 100 120 140 C 180 0 20 40 60 80 100 120 140 C 180 25 20 15 TC TC Safe operating area ID = (VDS) parameter: D = 0.01, TC = 25C 10 3 Transient thermal impedance Zth JC = (tp) parameter: D = tp / T 10 0 A K/W t = 30.0s p ID 10 2 ) on S( D R /ID = ZthJC 10 -1 VD S 100 s 1 ms D = 0.50 0.20 10 1 10 ms 10 -2 0.10 0.05 0.02 DC single pulse 10 0 0 10 10 -3 -7 10 0.01 10 1 V 10 2 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 s 10 0 VDS tp Semiconductor Group 5 07/96 BUZ 102AL Typ. output characteristics ID = (VDS) parameter: tp = 80 s 100 A Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = 21 A, VGS = 5 V 0.080 Ptot = 200W kl j ih g f VGS [V] a b 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 7.0 8.0 10.0 RDS (on) 0.060 ID 80 70 e c d e f 60 50 40 30 c 0.050 g 0.040 dh i j k l 98% 0.030 typ 0.020 20 10 b 0.010 0.000 -60 0 a 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 5.0 VDS -20 20 60 100 C 180 Tj Typ. transfer characteristics ID = f (VGS) Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s VDS2 x ID x RDS(on)max 50 A parameter: tp = 80 s, VDS2 x ID x RDS(on)max 45 S ID 40 35 30 25 gfs 35 30 25 20 20 15 15 10 10 5 5 0 0 0 1 2 3 4 5 6 7 8 V 10 VGS 0 5 10 15 20 25 30 35 A ID 45 Semiconductor Group 6 07/96 BUZ 102AL Typ. drain-source on-resistance RDS (on) = (ID) parameter: VGS 0.09 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = 1 mA 4.6 RDS (on)0.07 0.06 0.05 a b c d e V 4.0 VGS(th) 3.6 3.2 2.8 2.4 0.04 0.03 0.02 0.01 0.00 0 10 20 30 40 50 60 70 80 A 100 VGS [V] = a 2.0 2.5 b 3.0 c 3.5 d 4.0 e f 4.5 5.0 g 5.5 h i 6.0 7.0 j 8.0 k 10.0 98% 2.0 typ f g hk ji 1.6 2% 1.2 0.8 0.4 0.0 -60 -20 20 60 100 C 180 ID Tj Typ. capacitances C = f (VDS) parameter:VGS = 0V, f = 1MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s 10 3 pF A C Ciss 10 3 IF 10 2 Coss Crss 10 2 10 1 Tj = 25 C typ Tj = 175 C typ Tj = 25 C (98%) Tj = 175 C (98%) 10 1 0 10 0 0.0 5 10 15 20 25 30 V 40 VDS 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VSD Semiconductor Group 7 07/96 BUZ 102AL Avalanche energy EAS = (Tj ) parameter: ID = 42 A, VDD = 25 V RGS = 25 , L = 102 H 190 mJ 160 Typ. gate charge VGS = (QGate) parameter: ID puls = 63 A 16 V EAS 140 120 100 VGS 12 10 8 80 6 60 40 20 0 20 4 0,2 VDS max 0,8 VDS max 2 0 40 60 80 100 120 140 C 180 Tj 0 20 40 60 80 nC 110 Q Gate Drain-source breakdown voltage V(BR)DSS = (Tj ) 62 V 60 V(BR)DSS 59 58 57 56 55 54 53 52 51 50 49 48 47 -60 -20 20 60 100 C 180 Tj Semiconductor Group 8 07/96 BUZ 102AL Package Outlines TO-220 AB Dimension in mm Semiconductor Group 9 07/96 |
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