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| DATA SHEET SILICON TRANSISTOR FA1A4M MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR MINI MOLD FEATURES * Resistors Built-in TYPE C B R1 E 2.90.2 PACKAGE DIMENSIONS in millimeters 2.80.2 0.4+0.1 -0.05 1.5 0.65+0.1 -0.15 R2 0.95 0.95 2 3 * Complementary to FN1A4M ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Collector Current (Pulse) Total Power Dissipation (TA = 25 C) Junction temperature Storage Temperature Range VCBO VCEO VEBO IC IC PT TJ Tstg 60 50 10 100 200 200 150 -55 to +150 V V V mA mA mW C C Marking : L33 Marking 0.3 1.1 to 1.4 0.16+0.1 -0.06 0 to 0.1 Electrode Connection 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Collector Cutoff Current DC Current Gain DC Current Gain Collector Saturation Voltage Low-Level Input Voltage High-Level Input Voltage Input Resistor Resistor Ratio Turn-on Time Storage Time Turn-off Time SYMBOL ICBO hFE1* hFE2* VCE(sat)* VIL* VIH* R1 R1/R2 ton tstg toff 3.0 7.0 0.9 35 80 62 230 0.05 1.08 1.4 10 1.0 0.06 2.0 2.15 13 1.1 0.2 5.0 6.0 0.2 0.8 V V V k MIN. TYP. MAX. 100 100 UNIT nA TEST CONDITIONS VCB = 50 V, IE = 0 VCE = 5.0 V, IC = 5.0 mA VCE = 5.0 V, IC = 50 mA IC = 5.0 mA, IB = 0.25 mA VCE = 5.0, IC = 100 A VCE = 0.2 V, IC = 5.0 mA s s s VCC = 5 V, Vin = 5 V RL = 1 k PW = 2 s, Duty Cycle 2 % * Pulsed: PW = 350 s, Duty Cycle = 2 % Document No. D10215EJ3V0DS00 (3rd edition) (Previous No. TC-1654) Date Published October 1995 P Printed in Japan 0.4+0.1 -0.05 1 (c) 1985 FA1A4M TYPICAL CHARACTERISTICS (TA = 25 C) TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 250 COLLECTOR CURRENT vs. COLLECTOR TO EMITTER VOLTAGE 50 Free air PT - Total Power Dissipation - mW 220 A 200 A 200 IC - Collector Current - mA 40 180 A 30 150 160 A 140 A 100 20 120 A 50 10 0 50 100 150 200 250 0 2 100 A IB = 80 A 4 6 8 10 TA - Ambient Temperature - C VCE - Collector to Emitter Voltage - V COLLECTOR TO EMITTER VOLTAGE vs. COLLECTOR CURRENT 1.0 500 DC CURRENT GAIN vs. COLLECTOR CURRENT VCE = 5.0 V VCE - Collector to Emitter Voltage - V 0.8 200 TA = 75 C hFE - DC Current Gain 100 50 25 C -25 C 0.6 Vin = 5 V 0.4 10 V 20 10 5 1.0 0.2 0 20 40 60 80 100 2.0 5.0 10 20 50 100 IC - Collector Current - mA IC - Collector Current - mA COLLECTOR SATURATION VOLTAGE vs. COLLECTOR CURRENT 2.0 50 IC = 10*IB 1.0 20 0.5 TA = 75 C 25 C -25 C INPUT VOLTAGE vs. COLLECTOR CURRENT VCE(sat) - Collector Saturation Voltage - V Vin - Input Voltage - V 10 0.2 V 5.0 0.2 0.1 0.05 2.0 1.0 VCE = 5.0 V -25 C 25 C TA = 75 C 2.0 5.0 10 20 50 100 0.02 1.0 2.0 5.0 10 20 50 100 0.5 1.0 IC - Collector Current - mA IC - Collector Current - mA 2 FA1A4M COLLECTOR CURRENT vs. INPUT VOLTAGE 1000 VCE = 5.0 V 16 100 R1 - Resistor - k TA = 75 C 20 RESISTOR vs. AMBIENT TEMPERATURE IC - Collector Current - A 25 C -25 C 12 8 10 4 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -25 0 25 50 75 100 Vin - Input Voltage - V TA - Ambient Temperature - C SWITCHING TIME vs. COLLECTOR CURRENT 5.0 Vin = 5 V VCC = 5 V PW = 2 s Duty Cycle 2 % 2.0 t - Swiching Time - s 1.0 0.5 tstg tf 0.2 0.1 0.05 1.0 ton 2.0 5.0 10 20 50 100 IC - Collector Current - mA REFERENCE Document Name NEC semiconductor device reliability/quality control system Quality grade on NEC semiconductor devices Semiconductor device mounting technology manual Guide to quality assurance for semiconductor devices Semiconductor selection guide Document No. TEI-1202 IEI-1209 IEI-1207 MEI-1202 MF-1134 3 FA1A4M [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices in "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact NEC Sales Representative in advance. Anti-radioactive design is not implemented in this product. M4 94.11 |
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