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PD - 91257D
HEXFET(R) Power MOSFET
l l l l l l l
IRLML2402
VDSS = 20V
Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile (<1.1mm) Available in Tape and Reel Fast Switching
D
G S
RDS(on) = 0.25
Description
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. A customized leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3, is ideal for applications where printed circuit board space is at a premium. The low profile (<1.1mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards.
Micro3
Absolute Maximum Ratings
Parameter
I D @ TA = 25C I D @ TA = 70C IDM PD @TA = 25C VGS dv/dt TJ, TSTG Continuous Drain Current, V GS @ 4.5V Continuous Drain Current, V GS @ 4.5V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt Junction and Storage Temperature Range
Max.
1.2 0.95 7.4 540 4.3 12 5.0 -55 to + 150
Units
A mW
mW/C
V V/ns C
Thermal Resistance
RJA Maximum Junction-to-Ambient
Parameter
Typ.
Max.
230
Units
C/W
01/15/03
IRLML2402
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) g fs IDSS IGSS Qg Qgs Qgd t d(on) tr t d(off) tf Ciss Coss Crss
Min. 20 0.70 1.3
Typ. 0.024 2.6 0.41 1.1 2.5 9.5 9.7 4.8 110 51 25
Max. Units Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 1mA 0.25 VGS = 4.5V, ID = 0.93A 0.35 VGS = 2.7V, ID = 0.47A V VDS = VGS, ID = 250A S VDS = 10V, ID = 0.47A 1.0 VDS = 16V, VGS = 0V A 25 VDS = 16V, VGS = 0V, TJ = 125C -100 VGS = -12V nA 100 VGS = 12V 3.9 ID = 0.93A 0.62 nC VDS = 16V 1.7 VGS = 4.5V, See Fig. 6 and 9 VDD = 10V ID = 0.93A ns RG = 6.2 RD = 11, See Fig. 10 VGS = 0V pF VDS = 15V = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
I SM
VSD t rr Q rr
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge
Min. Typ. Max. Units 25 16 0.54 7.4 1.2 38 24 V ns nC A
Conditions MOSFET symbol showing the integral reverse p-n junction diode. TJ = 25C, IS = 0.93A, VGS = 0V TJ = 25C, IF = 0.93A di/dt = 100A/s
D
G S
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
Pulse width 300s; duty cycle 2%. Surface mounted on FR-4 board, t 5sec.
ISD 0.93A, di/dt 90A/s, VDD V(BR)DSS,
TJ 150C
IRLML2402
100
VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP
100
I , Drain-to-Source Current (A) D
10
I , Drain-to-Source Current (A) D
10
VGS 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM 1.5V TOP
1
1
1.5V
0.1
0.1
1.5V 20s PULSE WIDTH TJ = 25C A
1 10
0.01 0.1
0.01 0.1
20s PULSE WIDTH TJ = 150C A
1 10
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
10
2.0
TJ = 25C
TJ = 150C
1
R DS(on) , Drain-to-Source On Resistance (Normalized)
I D = 0.93A
I D , Drain-to-Source Current (A)
1.5
1.0
0.1
0.5
0.01 1.5 2.0 2.5
V DS = 10V 20s PULSE WIDTH
3.0 3.5 4.0
A
0.0 -60 -40 -20
VGS = 4.5V
0 20 40 60
A
80 100 120 140 160
VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
IRLML2402
200
V GS, Gate-to-Source Voltage (V)
160
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
10
I D = 0.93A VDS = 16V
8
C, Capacitance (pF)
Ciss
120
6
Coss
80
4
Crss
40
2
0 1 10 100
A
0 0.0
FOR TEST CIRCUIT SEE FIGURE 9
1.0 2.0 3.0
A
4.0
VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
10
100
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY R DS(on)
TJ = 150C
1
I D , Drain Current (A)
10
TJ = 25C
100s 1 1ms
0.1
0.01 0.2 0.4 0.6 0.8 1.0
VGS = 0V
1.2
A
0.1 1
TA = 25C TJ = 150C Single Pulse
10
10ms
1.4
A
100
VSD , Source-to-Drain Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
IRLML2402
QG
V DS VGS
RD
4.5V
VG
QGS
QGD
RG 4.5V
D.U.T.
+
- VDD
Charge
Pulse Width 1 s Duty Factor 0.1 %
Fig 9a. Basic Gate Charge Waveform
Current Regulator Same Type as D.U.T.
Fig 10a. Switching Time Test Circuit
VDS
50K 12V .2F .3F
90%
D.U.T. VGS
3mA
+ V - DS
10% VGS
td(on)
IG ID
tr
t d(off)
tf
Current Sampling Resistors
Fig 9b. Gate Charge Test Circuit
1000
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50 0.20 0.10 0.05
10 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.0001 0.001 0.01 0.1 1 10 100
1
0.1 0.00001
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
IRLML2402
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 12. For N-Channel HEXFETS
IRLML2402
Package Outline
Micro3 (SOT-23 / TO-236AB) Dimensions are shown in millimeters (inches)
D -B3 INCHES MIN .032 .001 .015 .004 .105 MAX .044 .004 .021 .006 .120 MILLIMETERS MIN 0.82 0.02 0.38 0.10 2.67 MAX 1.11 0.10 0.54 0.15 3.05
LEAD ASSIGNMENTS 1 - GATE 2 - SOURCE 3 - DRAIN
H 2 0.20 ( .008 ) M AM
DIM A A1 B C D e e1 E
3
E -A-
3 1
.0750 BASIC .0375 BASIC .047 .083 .005 0 .055 .098 .010 8
1.90 BASIC 0.95 BASIC 1.20 2.10 0.13 0 1.40 2.50 0.25 8
e e1 0.008 (.003) L 3X C 3X
H L A
-CB 3X 0.10 (.004) M A1 C AS B S
MINIMUM RECOMMENDED FOOTPRINT 0.80 ( .031 ) 3X 0.90 ( .035 ) 3X 2.00 ( .079 )
NOTES: 1. DIMENSIONING & TOLERANCING PER ANSI Y14.5M-1982. 2. CONTROLLING DIMENSION : INCH. 3 DIMENSIONS DO NOT INCLUDE MOLD FLASH.
0.95 ( .037 ) 2X
Part Marking Information
Micro3 (SOT-23 / TO-236AB)
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IRLML2402
Tape & Reel Information
2.05 ( .080 ) 1.95 ( .077 ) 4.1 ( .161 ) 3.9 ( .154 )
Micro3 (SOT-23 / TO-236AB) Dimensions are shown in millimeters (inches)
1.6 ( .062 ) 1.5 ( .060 ) 1.32 ( .051 ) 1.12 ( .045 )
1.85 ( .072 ) 1.65 ( .065 )
TR
3.55 ( .139 ) 3.45 ( .136 )
8.3 ( .326 ) 7.9 ( .312 )
FEED DIRECTION
4.1 ( .161 ) 3.9 ( .154 )
1.1 ( .043 ) 0.9 ( .036 )
0.35 ( .013 ) 0.25 ( .010 )
178.00 ( 7.008 ) MAX.
9.90 ( .390 ) 8.40 ( .331 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 01/03

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