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| Preliminary data SPD02N60 SPU02N60 SIPMOS(R) Power Transistor * N-Channel * Enhancement mode * Avalanche rated Pin 1 G Type SPD02N60 SPU02N60 Pin 2 D Pin 3 S VDS ID 600 V 2 A RDS(on) @ VGS Package VGS = 10 V P-TO252 5.5 P-TO251 Ordering Code Q67040-S4133 Q67040-S4127-A2 Maximum Ratings, at T j = 25 C, unless otherwise specified Symbol Parameter Continuous drain current Value 2 1.3 8 135 Unit A ID T C = 25 C T C = 100 C Pulsed drain current IDpulse EAS T C = 25 C Avalanche energy, single pulse mJ I D = 2 A, VDD = 50 V, R GS = 25 , T j = 25 C Gate source voltage Power dissipation VGS Ptot Tj T stg 20 55 -55 ... +150 -55 ... +150 55/150/56 V W C T C = 25 C Operating temperature Storage temperature IEC climatic category; DIN IEC 68-1 Semiconductor Group 1 10 / 1998 Preliminary data SPD02N60 SPU02N60 Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Thermal Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area1) Symbol min. Values typ. max. 2.25 100 50 tbd K/W Unit RthJC RthJA RthJA - Static Characteristics Drain- source breakdown voltage V(BR)DSS VGS(th) I DSS 600 2.1 3 4 V VGS = 0 V, I D = 0.25 mA Gate threshold voltage, VGS = VDS I D = 1 mA Zero gate voltage drain current A 0.1 10 4.2 1 100 100 5.5 nA VDS = 600 V, VGS = 0 V, T j = 25 C VDS = 600 V, VGS = 0 V, T j = 150 C Gate-source leakage current I GSS RDS(on) - VGS = 20 V, VDS = 0 V Drain-Source on-state resistance VGS = 10 V, I D = 1.3 A 1 Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70m thick) copper area for drain connection. PCB is vertical without blown air. Semiconductor Group 2 10 / 1998 Preliminary data Electrical Characteristics Parameter Symbol Values SPD02N60 SPU02N60 Unit at Tj = 25 C, unless otherwise specified Dynamic Characteristics Transconductance min. typ. 1.8 350 40 15 10 max. 460 60 22 15 ns S pF gfs Ciss Coss Crss td(on) 1 - VDS2*ID*RDS(on)max , ID = 1.3 A Input capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Rise time tr - 25 40 VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Turn-off delay time td(off) - 35 50 VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Fall time tf - 25 35 VDD = 30 V, VGS = 10 V, ID = 1.5 A, RG = 50 Semiconductor Group 3 10 / 1998 Preliminary data SPD02N60 SPU02N60 Electrical Characteristics Parameter at Tj = 25 C, unless otherwise specified Reverse Diode Inverse diode continuous forward current Symbol min. Values typ. max. Unit IS ISM VSD trr Qrr - 0.85 300 2.3 2 8 1.4 450 3.45 A TC = 25 C Inverse diode direct current,pulsed TC = 25 C Inverse diode forward voltage V ns C VGS = 0 V, IF = 4 A Reverse recovery time VR = 100 V, IF =IS , diF/dt = 100 A/s Reverse recovery charge VR = 100 V, IF =lS , diF/dt = 100 A/s Semiconductor Group 4 10 / 1998 Preliminary data Power Dissipation Drain current SPD02N60 SPU02N60 Ptot = f (TC) SPD02N60 ID = f (TC ) parameter: VGS 10 V SPD02N60 60 W 2.4 A 50 45 2.0 1.8 1.6 Ptot 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 C ID 1.4 1.2 1.0 0.8 0.6 0.4 0.2 160 0.0 0 20 40 60 80 100 120 C 160 Safe operating area TC Transient thermal impedance Tj ID = f ( V DS ) parameter : D = 0 , TC = 25 C 10 1 SPD02N60 tp = 30.0s ZthJC = f(tp) parameter : D = t p/T 10 1 SPD02N60 K/W A 100 s 10 0 R DS ( on ) ZthJC 10 -1 D = 0.50 0.20 ID = V 10 0 /I D DS 1 ms 10 ms 10 -1 0.10 DC 10 -2 single pulse 0.05 0.02 0.01 10 -2 0 10 10 1 10 2 V 10 3 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 VDS Semiconductor Group 5 tp 10 / 1998 Preliminary data Typ. output characteristics Drain-source on-resistance SPD02N60 SPU02N60 ID = f (VDS) parameter: tp = 80 s SPD02N60 RDS(on) = f (Tj ) parameter : ID = 1.3 A, VGS = 10 V SPD02N60 5.0 A Ptot = 55W l kj i h g f VGS [V] a b 26 22 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 9.0 10.0 20.0 4.0 3.5 e 20 c d RDS(on) 18 16 14 12 10 ID 3.0 2.5 2.0 1.5 1.0 0.5 a b c d e f g h i j k l 98% 8 typ 6 4 2 0.0 0 10 20 30 40 V 60 0 -60 -20 20 60 100 C 180 VDS Tj Semiconductor Group 6 10 / 1998 Preliminary data Gate threshold voltage SPD02N60 SPU02N60 Typ. transfer characteristics I D= f ( VGS ) parameter: tp = 80 s VGS(th) = f (Tj) parameter : VGS = VDS ,ID = 1 mA 5.2 V VDS 2 x ID x RDS(on)max 4.0 A 4.4 3.0 4.0 VGS(th) 3.6 3.2 2.8 2.4 max ID 2.5 2.0 1.5 2.0 1.6 typ 1.0 1.2 0.8 0.4 min 0.5 0.0 0.0 1.0 2.0 3.0 4.0 V 6.0 0.0 -60 -20 20 60 100 V 160 VGS Tj Typ. capacitances Forward characteristics of reverse diode C = f(VDS) Parameter: VGS=0 V, f=1 MHz 10 pF 4 IF = f (VSD ) parameter: Tj , tp = 80 s 10 1 SPD02N60 A 10 3 C 10 2 Coss 10 -1 10 1 IF Ciss 10 0 Crss Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 5 10 15 20 25 30 V 40 10 -2 0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0 VDS Semiconductor Group 7 VSD 10 / 1998 Preliminary data SPD02N60 SPU02N60 Avalanche Energy EAS = f (Tj) parameter: ID = 2 A,VDD = 50 V Drain-source breakdown voltage V(BR)DSS = f (Tj) SPD02N60 RGS = 25 140 mJ 720 V 120 110 100 V(BR)DSS 40 60 80 100 120 C 680 660 640 620 600 EAS 90 80 70 60 50 40 30 20 10 0 20 160 580 560 540 -60 -20 20 60 100 C 180 Tj Tj Semiconductor Group 8 10 / 1998 Preliminary data SPD02N60 SPU02N60 Edition 7.97 Published by Siemens AG, Bereich Halbleiter Vetrieb, Werbung, Balanstrae 73, 81541 Munchen (c) Siemens AG 1997 All Rights Reserved. Attention please! As far as patents or other rights of third parties are concerned, liability is only assumed for components, not for applications, processes and circuits implemented within components or assemblies. The information describes a type of component and shall not be considered as warranted characteristics. Terms of delivery and rights to change design reserved. For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany or the Siemens Companies and Representatives worldwide (see address list). Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Siemens Office, Semiconductor Group. Siemens AG is an approved CECC manufacturer. Packing Please use the recycling operators known to you. We can also help you - get in touch with your nearest sales office. By agreement we will take packing material back, if it is sorted. You must bear the costs of transport. For packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. Components used in life-support devices or systems must be expressly authorized for such purpose! Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or systems2 with the express written approval of the Semiconductor Group of Siemens AG. 1)A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or maintain and sustain and/or protecf human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Semiconductor Group 9 10 / 1998 |
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