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| BAR 65-07 Silicon RF Switching Diode Preliminary data * Low loss, low capacitance PIN-Diode * Band switch for TV-tuners * Series diode for mobile communications transmit-receive switch * Unconnected pair Type BAR 65-07 Marking Ordering Code M UPON INQUIRY Q62702- Pin Configuration Package 1 = C1 2 =C2 3 = A2 4 = A1 SOT-143 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Values 30 100 - 55 ... + 125 - 55 ... + 150 Unit V mA C VR IF Top Tstg Semiconductor Group 1 Apr-30-1996 BAR 65-07 Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 0.93 20 nA V 1 VR = 20 V, TA = 25 C Forward voltage VF IF = 100 mA AC characteristics Diode capacitance CT 0.6 0.57 0.65 0.56 1.4 0.9 0.8 0.95 0.9 - pF VR = 1 V, f = 1 MHz VR = 3 V, f = 1 MHz Forward resistance rf - IF = 5 mA, f = 100 MHz IF = 10 mA, f = 100 MHz Series inductance Ls - nH Semiconductor Group 2 Apr-30-1996 BAR 65-07 Forward current IF = f (VF) Forward resistance rf = f(IF) f = 100MHz 10 3 mA 3.0 RF 2.4 2.2 2.0 1.8 IF 10 2 10 1 1.6 1.4 1.2 1.0 10 0 0.8 0.6 0.4 10 -1 400 500 600 700 800 mV 1000 VF 0.2 0.0 -1 10 10 0 mA IF Diode capacitance CT = f (VR) f = 1MHz Diode capacitance CT = f (VR) f = 100MHz 1.0 1.0 pF pF CT 0.8 CT 0.8 0.7 0.7 0.6 0.6 0.5 0.5 0.4 0.4 0.3 0.2 0 1 2 3 4 5 6 7 8 V 10 0.3 0.2 0 1 2 3 4 5 6 7 8 VR V VR 10 Semiconductor Group Apr-30-1996 3 |
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