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| DG200A Monolithic Dual SPST CMOS Analog Switch Features D D D D "15 V Input Signal Range 44-V Maximum Supply Ranges On-Resistance: 45 W TTL and CMOS Compatibility Benefits D Wide Dynamic Range D Simple Interfacing D Reduced External Component Count Applications D D D D Servo Control Switching Programmable Gain Amplifiers Audio Switching Programmable Filters Description The DG200A is a dual, single-pole, single-throw analog switch designed to provide general purpose switching of analog signals. This device is ideally suited for designs requiring a wide analog voltage range coupled with low on-resistance. The DG200A is designed on Siliconix' improved PLUS-40 CMOS process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks up to 30 V peak-to-peak when off. In the on condition, this bi-directional switch introduces no offset voltage of its own. Functional Block Diagram and Pin Configuration Dual-In-Line IN2 NC GND NC S2 D2 V- 1 2 3 4 5 6 7 Top View 14 13 12 11 10 9 8 IN1 NC V+ Substrate NC S1 D1 NC GND IN2 2 3 4 S2 5 6 V- IN1 1 Metal Can V+ (Substrate and Case) 10 S1 9 8 7 D1 NC D2 Top View Truth Table Logic 0 1 Logic "0" v 0.8 V g Logic L i "1" w 2.4 V 24 Switch ON OFF Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70035. Siliconix S-52880--Rev. B, 28-Apr-97 1 DG200A Ordering Information Temp Range 0 to 70_C -25 to 85_C Package 14-Pin Plastic DIP 14-Pin CerDIP 10-Pin Metal Can Part Number DG200ACJ DG200ABK DG200ABA DG200AAK 14-Pin CerDIP -55 to 125_C 10-Pin Metal Can 14-Pin Sidebraze DG200AAK/883, JM38510/12301BCA DG200AAA DG200AAA/883, JM38510/12301BIC JM38510/12301BCC Absolute Maximum Ratings V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa, VS, VD . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Current (Any Terminal) Continuous . . . . . . . . . . . . . . . . . . . . . . 30 mA Current S or D (Pulsed at 1 ms, 10% Duty Cycle Max) . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (AX, BX Suffix) . . . . . . . . . . -65 to 150_C (CJ Suffix) . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 10-Pin Metal Canc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 14-Pin CerDIPd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 825 mW 14-Pin Plastic DIPe . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 11 mW/_C above 75_C e. Derate 6.5 mW/_C above 25_C Schematic Diagram (Typical Channel) V+ S V- - + V+ GND INX D V- Figure 1. 2 Siliconix S-52880--Rev. B, 28-Apr-97 DG200A Specificationsa Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance Source Off Leakage Current Drain Off Leakage Current Channel On Leakage Currentf VANALOG rDS(on) IS(off) ID(off) ID(on) VD = "10 V, IS = -1 mA VS = "14 V, VD = #14 V VD = "14 V, VS = #14 V VS = VD = "14 V Full Room Full Room Full Room Full Room Full 45 -2 -100 -2 -100 -2 -200 -15 15 70 100 2 100 2 100 2 200 -5 -100 -5 -100 -5 -200 -15 15 80 100 5 100 5 100 5 200 nA V W A Suffix -55 to 125_C B, C Suffix Mind Maxd Symbol V = 15 V, V- = -15 V VV 15 V+ VIN = 2.4 V, 0.8 Vf Tempb Typc Mind Maxd Unit "0.01 "0.01 "0.1 Digital Control VIN = 2.4 V IINH VIN = 15 V Input Current with Input Voltage Low IINL VIN = 0 V Room Full Room Full Room Full 0.0009 0.005 -0.0015 -0.5 -1 -0.5 -1 0.5 1 -1 -10 -1 -10 1 10 mA Input Current with p I Input V l Voltage Hi h High Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Source-Off Capacitance Drain-Off Capacitance Channel-On Capacitance Off Isolation Crosstalk (Channel-to-Channel) tON tOFF Q CS(off) CD(off) CD(on) + CS(On) OIRR XTALK CL = 1000 pF, Vg = 0 V Rg = 0 W f = 140 kHz VIN = 5 V VS = 0 V VD = 0 V Room See Switching Time Test Circuit Room Room Room Room Room Room Room 340 -10 9 9 25 75 90 dB pF 425 425 pC 440 1000 1000 ns VD = VS = 0 V, VIN = 0 V VIN = 5 V RL = 75 W V, VS = 2 V, f = 1 MHz Power Supplies Positive Supply Current Negative Supply Current I+ I- Both Channels On or Off VIN = 0 V and 2 4 V d 2.4 Room Room 0.8 -0.23 -1 2 -1 2 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is aminimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. Siliconix S-52880--Rev. B, 28-Apr-97 3 DG200A Typical Characteristics rDS(on) vs. VD and Power Supply Voltage +6 120 A: B: C: D: E: "5 V "10 V "12 V "15 V "20 V TA = 25_C 0 A I S , I D (pA) -6 ID(on) ID(off) or IS(off) Leakage Currents vs. Analog Voltage 100 rDS(on) ( W ) 80 B 60 C D 40 E -12 -18 20 -15 -12 -9 -6 -3 0 3 6 9 12 15 VD - Drain Voltage (V) -24 -15 -12 -9 -6 -3 0 3 6 9 12 15 VANALOG - Analog Voltage (V) Input Switching Threshold vs. V+ and V- Supply Voltages 2.5 Supply Currents vs. Toggle Frequency 2.0 VT (V) 1.5 1.0 0.5 0 0 "5 V+, V- Positive and Negative Supplies (V) 4 EEEEEEEEE EEEEEEEEE EEEEEEEEE EEEEEEEEE EEEEEEEEE EEEEEEEEE EEEEEEEEE EEEEEEEEE EEEEEEEEE "10 "15 "20 6 5 I+, I- (mA) 4 3 2 V+ = 15 V V- = -15 V Both logic inputs toggled simutaneously I+ 1 I- 0 1k 10 k 100 k 1M Toggle Frequency (Hz) Siliconix S-52880--Rev. B, 28-Apr-97 DG200A Test Circuits VO is the steady state output with switch on. Feedthrough via gate capacitance may result in spikes at leading and trailing edge of output waveform. +15 V Logic Input Switch Input Switch Output 3V 50% 0V tOFF VS 90% VO tON 3V GND tr <20 ns tf <20 ns VS = +5 V S IN V+ D VO RL 1 kW CL 35 pF V- -15 V VO = VS RL RL + rDS(on) Figure 2. Switching Time +15 V DVO Rg V+ S IN 3V GND V- DVO = measured voltage error due to charge injection The charge injection in coulombs is DQ = CL x DVO -15 V D VO CL 1000 pF INX ON OFF ON VO Vg Figure 3. Charge Injection C +15 V C V+ +15 V V+ VS S D VO RL GND V- C Rg = 50 W 0V S1 IN1 S2 IN2 GND -15 V -15 V Off Isolation = 20 log VS VO XTALK = 20 log C = RF bypass VS VO V- C D2 D1 50 W VO RL VS Rg = 50 W 5V IN NC 0V Figure 4. Off Isolation Figure 5. Channel-to-Channel Crosstalk Siliconix S-52880--Rev. B, 28-Apr-97 5 |
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