View NDM3000_121623.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

May 1996
NDM3000 3 Phase Brushless Motor Driver
General Description
The NDM3000 three phase brushless motor driver consists of three N-Channel and P-Channel MOSFETs in a half bridge configuration. These devices are produced using Fairchild's proprietary, high cell density DMOS technology. This very high density process is tailored to minimize on-state resistance which reduces power loss, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes. These devices are particularly suited for low voltage 3 phase motor driver such as disk drive spindle motor control and other half bridge applications.
Features
3.0A, 30V, 2.5W High density cell design for extremely low RDS(ON). High power and current handling capability. Industry standard SOIC-16 surface mount package.
________________________________________________________________________________
11,14 10 12 15
Q1
1,16 4,13 8,9
Q3
Q5
Q2
2 5 7 3,6
Q4
Q6
Absolute Maximum Ratings
Symbol VDSS VGSS ID Parameter
T A = 25C unless otherwise noted
NDM3000 30 20 3.0 10 2.5 1.6 1.4 -55 to 150
Units V V A
Drain-Source Voltage (All Types) Gate-Source Voltage (All Types) Drain Current Q1+Q4 or Q1+Q6 or Q3+Q2 Continuous Q3+Q6 or Q5+Q2 or Q5+Q4 - Pulsed
(Note 1a & 2) (Note 1a) (Note 1b) (Note 1c)
PD
Total Power Dissipation Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4
W
TJ,TSTG
Operating and Storage Temperature Range
C
(c) 1997 Fairchild Semiconductor Corporation
NDM3000 Rev. E
THERMAL CHARACTERISTICS RJA Thermal Resistance, Junction-to-Ambient Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1a) Thermal Resistance, Junction-to-Case Q1+Q4 or Q1+Q6 or Q3+Q2 or Q3+Q6 or Q5+Q2 or Q5+Q4 (Note 1) 50 C/W
RJC
20
C/W
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSS VGS(th) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 A VDS = 20 V, VGS = 0 V TJ=55oC Gate - Body Leakage, Forward
(Note 3)
All All
30 1 25
V A A nA
VGS = 20 V, VDS = 0 V VDS = VGS, ID = -250 A TJ=125oC VDS = VGS, ID = 250 A TJ=125oC
All
100
ON CHARACTERISTICS
Gate Threshold Voltage
Q1, Q3, Q5
-1 -0.7
-1.6 -1.25 1.7 1.2 0.125 0.18 0.16
-3 -2.2 3 2.2 0.16 0.29 0.25 0.09 0.16 0.13
V
Q2, Q4, Q6
1 0.7
RDS(ON)
Static Drain-Source On-Resistance
VGS = -10 V, ID = -3.0 A TJ=125oC VGS = -4.5 V, ID = -1.0 A VGS = 10 V, ID = 3.0 A TJ=125 C VGS = 4.5 V, ID = 1.0 A
o
Q1, Q3, Q5
Q2, Q4, Q6
0.07 0.1 0.09
ID(on)
On-State Drain Current
VGS = -10 V, VDS = -5 V VGS = 10 V, VDS = 5 V
Q1, Q3, Q5 Q2, Q4, Q6
-10 10
A
DYNAMIC CHARACTERISTICS Ciss Coss Crss Input Capacitance Output Capacitance Q2, Q4, Q6 VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q1, Q3, Q5 VDS = -10 V, VGS = 0 V, f = 1.0 MHz Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 375 360 245 260 130 105 pF pF pF
Reverse Transfer Capacitance
NDM3000 Rev. E
Electrical Characteristics (TA = 25C unless otherwise noted)
Symbol Parameter
(Note 3)
Conditions
Type
Min
Typ
Max
Units
SWITCHING CHARACTERISTICS tD(on) tr tD(off) tf Qg Qgs Qgd Turn - On Delay Time Turn - On Rise Time
Q1, Q3, Q5 VDD = -15 V, ID = -1 A, VGEN = -10 V, RGEN = 6 Q2, Q4, Q6 VDD = 15 V, ID = 1 A, VGEN = 10 V, RGEN = 6
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6
10 9 13 21 21 21 5 8 10 9.5 1.6 1.5 3 2.5
40 40 40 40 90 90 50 50 25 25
ns ns
Turn - Off Delay Time
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6
ns
Turn - Off Fall Time
ns
Total Gate Charge Gate-Source Charge
Q1, Q3, Q5 VDS = -10 V, ID = -3.0 A, VGS = -10 V Q2, Q4, Q6 VDS = 10 V, ID = 3.0 A, VGS = 10 V
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6
nC nC
Gate-Drain Charge
nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS VSD trr
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Recovery Time
Q1, Q3, Q5 Q2, Q4, Q6 Q1, Q3, Q5 Q2, Q4, Q6 All -0.8 0.8
-1.2 1.2 -1.3 1.3 100
A V
VGS = 0 V, IS = -3.0 A VGS = 0 V, IS = 3.0 A VGS = 0 V, I F = 3.0 A, dI F /dt = 100 A/s
(Note 3) (Note 3)
ns
PD (t) =
R J A (t)
T J-TA
=
R J C CA +R (t)
T J-TA
= I 2 (t) x RDS(ON ) D
TJ
Typical RJA using the board layouts shown below on 4.5"x5" FR-4 PCB in a still air environment: a. 50oC/W when mounted on a 1 in2 pad of 2oz cpper. b. 80oC/W when mounted on a 0.027 in2 pad of 2oz cpper. c. 90oC/W when mounted on a 0.0028 in2 pad of 2oz cpper.
1a
1b
1c
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%.
NDM3000 Rev. E
Typical Electrical Characteristics
-20
20
VGS =10V
, DRAIN-SOURCE CURRENT (A)
8.0
6.0
, DRAIN-SOURCE CURRENT (A)
VGS = -10V
5.0
-15
-8.0
-7.0 -6.0 -5.5 -5.0
15
4.5
10
4.0
-10
-4.5 -4.0
-5
3.5
5
-3.5 -3.0
0 0 -1 V
DS
I
3.0
0
D
0
1 2 VDS , DRAIN-SOURCE VOLTAGE (V)
3
I
D
-2 -3 , DRAIN-SOURCE VOLTAGE (V)
-4
-5
Figure 1. N-Channel On-Region Characteristic.
Figure 2. P-Channel On-Region Characteristics.
3
3
DRAIN-SOURCE ON-RESISTANCE
VGS = 3.5V
DRAIN-SOURCE ON-RESISTANCE 2.5 R DS(on) , NORMALIZED 2.5
VGS = -3.5V
-4.0 -4.5 -5.0
R DS(on) , NORMALIZED
4.0
2
2
4.5
1.5
-5.5 -6.0
5.0 6.0 8.0 10
1.5
1
1
-7.0 -8.0 -10
0.5
0
3
6 9 ID , DRAIN CURRENT (A)
12
15
0.5 0 -3 -6 -9 I D , DRAIN CURRENT (A) -12 -15
Figure 3. N-Channel On-Resistance Variation with Gate Voltage and Drain Current.
Figure 4. P-Channel On-Resistance Variation with Gate Voltage and Drain Current.
1.6
1.6
DRAIN-SOURCE ON-RESISTANCE
I D = 3A
DRAIN-SOURCE ON-RESISTANCE
I D = -3A
1.4
R DS(ON), NORMALIZED
1.4
R DS(ON) NORMALIZED ,
V GS = 10V
V GS = -10V
1.2
1.2
1
1
0.8
0.8
0.6 -50
-25
0
25
50
75
100
125
150
0.6 -50
-25
TJ , JUNCTION TEMPERATURE (C)
0 25 50 75 100 T , JUNCTION TEMPERATURE (C) J
125
150
Figure 5. N-Channel On-Resistance Variation with Temperature.
Figure 6. P-Channel On-Resistance Variation with Temperature.
NDM3000 Rev. E
Typical Electrical Characteristics
2
2
DRAIN-SOURCE ON-RESISTANCE
DRAIN-SOURCE ON-RESISTANCE
VGS = 10 V
R DS(on) , NORMALIZED
V G S = -10V
R DS(on) , NORMALIZED
1.5
TJ = 125C
1.5
T J = 125C
25C
1
25C
1
-55C
-55C
0.5
0.5 0 3 6 9 I D , DRAIN CURRENT (A) 12 15 0 -3 -6 -9 I D , DRAIN CURRENT (A) -12 -15
Figure 7. N-Channel On-Resistance Variation with Drain Current and Temperature.
Figure 8. P-Channel On-Resistance Variation with Drain Current and Temperature.
10
-10
V DS = 10V
8 I D , DRAIN CURRENT (A)
TJ = -55C
125C
-8 I D , DRAIN CURRENT (A)
V DS = -10V
T = -55C J
25C
125C
25C
6
-6
4
-4
2
-2
0
0 1 2 3 4 VGS , GATE TO SOURCE VOLTAGE (V) 5 -1 -2 -3 -4 -5 V GS , GATE TO SOURCE VOLTAGE (V) -6
Figure 9. N-Channel Transfer Characteristics.
Figure 10. P-Channel Transfer Characteristics.
1.2 GATE-SOURCE THRESHOLD VOLTAGE GATE-SOURCE THRESHOLD VOLTAGE
1.2
1.1
V DS = V GS I D = 250A
V th , NORMALIZED
VDS = VG S
1.1
I D = -250A
Vth , NORMALIZED
1
1
0.9
0.9
0.8
0.7
0.8
0.6 -50
-25
0 25 50 75 100 T J , JUNCTION TEMPERATURE (C)
125
150
0.7 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
Figure 11. N-Channel Gate Threshold Variation with Temperature.
Figure 12. P-Channel Gate Threshold Variation with Temperature.
NDM3000 Rev. E
Typical Electrical Characteristics
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.12
DRAIN-SOURCE BREAKDOWN VOLTAGE
1.1
I D = 250A
I D = -250A
1.08 1.06 1.04 1.02 1 0.98 0.96 0.94 -50
BV DSS , NORMALIZED
1.08
BV DSS, NORMALIZED
1.04
1
0.96
0.92 -50
-25
0 25 50 75 100 TJ , JUNCTION TEMPERATURE (C)
125
150
-25
0 25 50 75 100 T J , JUNCTION TEMPERATURE (C)
125
150
Figure 13. N-Channel Breakdown Voltage Variation with Temperature.
Figure 14. P-Channel Breakdown Voltage Variation with Temperature.
1000 800
1000 800 500
500 CAPACITANCE (pF)
C iss
300 200
CAPACITANCE (pF)
C iss
300 200
C oss
C oss
100
f = 1 MHz V GS = 0V C rss
30
100
f = 1 MHz V GS = 0 V C rss
50 0.1
0.2
0.5 1 2 5 10 V DS , DRAIN TO SOURCE VOLTAGE (V)
50 0.1
0.2
0.5 1 2 5 10 -VDS , DRAIN TO SOURCE VOLTAGE (V)
30
Figure 15. N-Channel Capacitance Characteristics.
Figure 16. P-Channel Capacitance Characteristics.
10
10
I D = 3A
V GS , GATE-SOURCE VOLTAGE (V) 8
V DS = 10V
-VGS , GATE-SOURCE VOLTAGE (V)
20V
I D = -3A
8
V DS = -10V -20V
15V
6
-15V
6
4
4
2
2
0
0
2
4 6 8 Q g , GATE CHARGE (nC)
10
12
0
0
2
4 6 8 Q g , GATE CHARGE (nC)
10
12
Figure 17. N-Channel Gate Charge Characteristics.
Figure 18. P-Channel Gate Charge Characteristics.
NDM3000 Rev. E
Typical Electrical Characteristics
10 , TRANSCONDUCTANCE (SIEMENS)
6
V DS =10V
, TRANSCONDUCTANCE (SIEMENS) 8
T J = -55C 25C
V DS = -10V
5
TJ = -55C 25C
6
125C
4
125C
3
4
2
2
1
FS
g
0 0 2 4 6 8 10 I D , DRAIN CURRENT (A)
g 0 0
FS
-2 ID
-4 -6 , DRAIN CURRENT (A)
-8
-10
Figure 19. N-Channel Transconductance Variation with Drain Current and Temperature.
Figure 20. P-Channel Transconductance Variation with Drain Current and Temperature.
VDD
t d(on)
ton tr
90%
to f f t d(off)
90%
tf
V IN
D
RL V OUT
DUT
VGS
VO U T
10% 10% 90%
R GEN
G
V IN
S
10%
50%
50%
PULSE WIDTH
Figure 21. N or P-Channel Switching Test Circuit.
Figure 22. N or P-Channel Switching Waveforms.
NDM3000 Rev. E
Typical Thermal and Electrical Characteristics
3.5
4
3
3.5
1a
DC POWER DISSIPATION (W)
ID , DC DRAIN CURRENT (A)
2.5
3
1a
2
2.5
1b
1.5
1b 1c 4.5"x5" FR-4 PCB Ta = 25C Still Air
2 1c
4.5"x5" FR-4 PCB Ta = 25C Still Air Vgs = -10V
1
1.5
0.5 0 0.2 0.4 0.6 0.8 1
1
2oz COPPER MOUNTING PAD AREA (in 2 )
0
0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 )
1
Figure 23. SOIC-16 3 Leadframe Device DC Power Dissipation versus Copper Mounting Pad Area
Figure 24. P-Ch DC Drain Current Capability versus Copper Mounting Pad Area.
5
10
1m
4.5 ID , DC DRAIN CURRENT (A) I D, DRAIN CURRENT (A)
1a
3
RD S(O
LI N)
T MI
10
s
ms
10
0m
4
1
s
1s
3.5
1b
0.3
10 DC
V GS = 10V SINGLE PULSE R J A = See Note 1c T A = 25C
s
3 1c
4.5"x5" FR-4 PCB Ta = 25C Still Air Vgs = 10V
0.1
2.5
0.03
2
0
0.2 0.4 0.6 0.8 2oz COPPER MOUNTING PAD AREA (in 2 )
1
0.01 0.1
0.2
0.5 1 2 5 10 V DS , DRAIN-SOURCE VOLTAGE (V)
30
50
Figure 25. N-Ch DC Drain Current Capability versus Copper Mounting Pad Area.
Figure 26. P-Ch Typical Safe Operating Area
1 TRANSIENT THERMAL RESISTANCE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 0.002 0.001 0.0001 0.001 0.01 0.1 1
D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk)
r(t), NORMALIZED EFFECTIVE
R JA (t) = r(t) * R JA R JA = See Note 1c
t1 TJ - T
t2
= P * R JA (t) Duty Cycle, D = t 1 / t 2
A
10
100
300
t1 , TIME (sec)
Figure 27. Transient Thermal Response Curve.
Note: Thermal characterization performed using the conditions described in note 1c. Transient thermal response will change depending on the circuit board design.
NDM3000 Rev. E
SOIC-16 Tape and Reel Data and Package Dimensions
SOIC(16lds) Packaging Configuration: Figure 1.0
Packaging Description:
EL ECT ROST AT IC SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE PT NUMB ER PEEL STREN GTH MIN ___ __ ____ __ ___gms MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-16 parts are shipped in tape. The carrier tape is made from a dissipative (carbon filled) polycarbonate resin. The cover tape is a multilayer film (Heat Activated Adhesive in nature) primarily composed of polyester film, adhesive layer, sealant, and anti-static sprayed agent. These reeled parts in standard option are shipped with 2,500 units per 13" or 330cm diameter reel. The reels are dark blue in color and is made of polystyrene plastic (antistatic coated). This and some other options are further described in the Packaging Information table. These full reels are individually barcode labeled and placed inside a standard intermediate box (illustrated in figure 1.0) made of recyclable corrugated brown paper. One box contains two reels maximum. And these boxes are placed inside a barcode labeled shipping box which comes in different sizes depending on the number of parts shipped.
Static Dissipative Embossed Carrier Tape
F63TNR Label
FD85AB
Customized Label
SOIC (16lds) Packaging Information Packaging Option Packaging type Qty per Reel/Tube/Bag Reel Size Box Dimension (mm) Max qty per Box Weight per unit (gm) Weight per Reel (kg) Note/Comments Standard (no flow code) TNR 2,500 13" Dia 343x64x343 5,000 0.1437 0.7735 L86Z Rail/Tube 45 530x130x83 13,500 0.1437 -
NDM3001 NDM3001
343mm x 342mm x 64mm Standard Intermediate box ESD Label F63TNR Label sample
LOT: CBVK741B019 FSID: NDM3000 QTY: 2500 SPEC:
FD85AB
NDM3001
FD85AB
FD85AB
SOIC-16 Unit Orientation
NDM3001
NDM3001
FD85AB
Pin 1
F63TNR Label F63TNR Label
ESD Label
D/C1: D9842 D/C2: QTY1: QTY2: SPEC REV: CPN: N/F: F (F63TNR)3
SOIC(16lds) Tape Leader and Trailer Configuration: Figure 2.0
Carrier Tape Cover Tape
Components Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets
October 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC(16lds) Embossed Carrier Tape Configuration: Figure 3.0
T E1
P0
D0
F K0 Wc B0 E2 W
Tc A0 P1 D1
User Direction of Feed
Dimensions are in millimeter Pkg type SOIC(16lds) (16mm)
A0
6.60 +/-0.30
B0
10.35 +/-0.25
W
16.0 +/-0.3
D0
1.55 +/-0.05
D1
1.60 +/-0.10
E1
1.75 +/-0.10
E2
14.25 min
F
7.50 +/-0.05
P1
8.0 +/-0.1
P0
4.0 +/-0.1
K0
2.40 +/-0.40
T
0.450 +/-0.150
Wc
13.0 +/-0.3
Tc
0.06 +/-0.02
Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481 rotational and lateral movement requirements (see sketches A, B, and C).
10 deg maximum Typical component cavity center line
0.9mm maximum
B0 10 deg maximum component rotation
0.9mm maximum
Sketch A (Side or Front Sectional View)
Component Rotation
A0 Sketch B (Top View)
Typical component center line
Sketch C (Top View)
Component lateral movement
SOIC(16lds) Reel Configuration: Figure 4.0
Component Rotation
W1 Measured at Hub
Dim A Max
B Min Dim C
Dim A max
Dim D min Dim N
DETAIL AA
See detail AA
W3
13" Diameter Option
W2 max Measured at Hub
Dimensions are in inches and millimeters
Tape Size
16mm
Reel Option
13" Dia
Dim A
13.00 330
Dim B
0.059 1.5
Dim C
512 +0.020/-0.008 13 +0.5/-0.2
Dim D
0.795 20.2
Dim N
4.00 100
Dim W1
0.646 +0.078/-0.000 16.4 +2/0
Dim W2
0.882 22.4
Dim W3 (LSL-USL)
0.626 - 0.764 15.9 - 19.4
July 1999, Rev. B
SOIC-16 Tape and Reel Data and Package Dimensions, continued
SOIC-16 (FS PKG Code S3)
1:1
Scale 1:1 on letter size paper
Dimensions shown below are in: inches [millimeters]
Part Weight per unit (gram): 0.1437
October 1999, Rev. A1
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM
DISCLAIMER
ISOPLANARTM MICROWIRETM POPTM PowerTrenchTM QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8
TinyLogicTM UHCTM VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.

▲Up To Search▲

Price & Availability of NDM3000

	To Download NDM3000 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .