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| PTF 10119 12 Watts, 2.1-2.2 GHz GOLDMOSTM Field Effect Transistor Description The PTF 10119 is an internally matched, common source, N-channel enhancement-mode lateral MOSFET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 12 watts power output. Nitride surface passivation and gold metallization ensure excellent device reliability. * * * * * * * INTERNALLY MATCHED Performance at 2.17 GHz, 28 Volts - Output Power = 12 Watts Min - Power Gain = 11 dB Typ - Efficiency = 43% Typ @ P-1dB Full Gold Metallization Silicon Nitride Passivated Back Side Common Source Excellent Thermal Stability 100% lot traceability Typical Output Power vs. Input Power 20 Output Power (Watts) 16 12 8 4 0 0 0.2 0.4 0.6 0.8 1 1.2 A-12 1011 9 3456 0053 VDD = 28 V IDQ = 160 mA f = 2170 MHz Input Power (Watts) Package 20222 Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Operating Junction Temperature Total Device Dissipation at Tflange = 25C Above 25C derate by Storage Temperature Range Thermal Resistance (Tflange = 70C) Symbol VDSS VGS TJ PD TSTG RqJC Value 65 20 200 55 0.31 -40 to +150 3.2 Unit Vdc Vdc C Watts W/C C C/W e 1 PTF 10119 Electrical Characteristics Characteristic (100% Tested) e Conditions Symbol V(BR)DSS IDSS VGS(th) gfs Min 65 -- 3.0 -- Typ -- -- -- 0.8 Max -- 1.0 5.0 -- Units Volts mA Volts Siemens Drain-Source Breakdown Voltage VGS = 0 V, ID = 50 mA Zero Gate Voltage Drain Current Gate Threshold Voltage Forward Transconductance VDS = 26 V, VGS = 0 V VDS = 10 V, ID = 75 mA VDS = 10 V, ID = 2 A RF Specifications (100% Tested) Characteristic Gain (VDD = 28 V, POUT = 3 W, IDQ = 160 mA, f = 2.11, 2.17 GHz) Power Output at 1 dB Compressed (VDD = 28 V, IDQ = 160 mA, f = 2.17 GHz) Drain Efficiency (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.17 GHz) Load Mismatch Tolerance (VDD = 28 V, POUT = 12 W, IDQ = 160 mA, f = 2.17 GHz --all phase angles at frequency of test) Symbol Gps p-1dB hD Y Min 10 12 30 -- Typ 11 14 43 -- Max -- -- -- 10:1 Units dB Watts % -- Impedance Data VDS = 28 V, POUT = 12 W, IDQ = 160 mA D Z0 = 50 W Z Source Z Load 0.2 0 0. 45 G 2.30 GHz S Z Load 2.30 GHz 0.0 Frequency GHz 2.00 2.10 2.12 2.15 2.17 2.20 2.30 R 0.1 0.2 0.3 0.4 jX -12.11 -19.50 -18.82 -14.14 -13.15 -9.28 12.03 R 3.30 3.55 4.12 3.75 3.53 3.32 3.23 jX 1.21 0.92 0.88 0.62 0.34 0.38 0.3 5.7 16.4 19.7 22.8 23.0 26.6 20.2 0.1 L W AVE Z Source 2.00 GHz 0.2 0.84 05 2 < -- - 0.5 Z Source W Z Load W 2.00 GHz 0.3 0.1 e Bias Voltage vs. Temperature 1.03 1.02 1.01 PTF 10119 Capacitance vs. Supply Voltage * 50 45 3 Voltage nomalized to 1.0 V Series show current (A) Cds and Cgs (pF) Bias Voltage (V) 40 35 30 25 20 15 10 5 0 0 0.99 0.98 0.97 0.96 0.95 0.94 -20 0 20 40 60 80 100 0.075 0.5 0.925 0.2875 0.7125 1.1375 1.5 Cds Crss 10 20 30 40 1 0.5 0 Temp. (C) Supply Voltage (Volts) *This part is internally matched. Measurements of the finished product will not yield these figures. Ericsson Microelectronics RF Power Products Morgan Hill, CA 95037 USA 1-877-GOLDMOS (465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/rfpower Specifications subject to change without notice. L1 (c) 1998 Ericsson Inc. EUS/KR 1301-PTF 10119 Uen Rev. A 12-21-99 3 Crss (pF) 1.00 Cgs VGS = 0 V f = 1 MHz 2.5 2 Notes e 4 |
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