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| BAS 16S Silicon Switching Diode Array * For high-speed switching applications * Internal (galvanic) isolated Diodes in one package Tape loading orientation 4 5 6 2 1 3 VPS05604 Type BAS 16S Marking Ordering Code Pin Configuration A6s Package Q62702-A1241 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 s Total power dissipation, T S = 85 C Junction temperature Storage temperature Symbol Value 75 85 200 4.5 250 150 65 ...+150 mA A mW C Unit V VR VRM IF I FS Ptot Tj T stg Thermal Resistance Junction - ambient 1) RthJA RthJS 530 260 K/W K/W Junction - soldering point 1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 0.5cm2 Cu Semiconductor Group Semiconductor Group 11 Apr-24-1998 1998-11-01 BAS 16S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. max. - Unit V(BR) VF 75 V mV I (BR) = 100 A Forward voltage I F = 1 mA I F = 10 mA I F = 50 mA I F = 150 mA Reverse current - - 715 855 1000 1250 2.5 A nA IR IR - VR = 70 V Reverse current VR = 25 V, TA = 150 C VR = 70 V, TA = 150 C AC characteristics Diode capacitance - - 30 50 CD t rr - - 2 6 pF ns VR = 0 V, f = 1 MHz Reverse recovery time I F = 10 mA, I R = 10 mA, R L = 100 , measured at IR = 1mA Test circuit for reverse recovery time D.U.T. F Oscillograph EHN00016 Pulse generator: tp = 100ns, D = 0.05, t r = 0.6ns, R i = 50 Oscillograph: R = 50, tr = 0.35ns, C 1pF Semiconductor Group Semiconductor Group 22 Apr-24-1998 1998-11-01 BAS 16S Forward current IF = f (TA*;TS) * Package mounted on epoxy Forward current IF = f V F) TA = 25C 300 5 150 BAS 16 EHB00023 mA F mA 200 IF TS 150 100 TA typ max 100 50 50 0 0 20 40 60 80 100 120 C 150 0 0 0.5 1.0 V 1.5 TA,TS VF Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 2 K/W IFmax / IFDC - RthJS 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Apr-24-1998 1998-11-01 BAS 16S Forward voltage V F = f (TA) Reverse current IR = f (TA) 1.0 BAS 16 EHB00025 BAS 16 EHB00022 VF V F = 100 mA R 10 5 nA V R = 70 V 10 4 10 mA 1 mA 0.1 mA 5 max. 70 V 0.5 10 3 5 25 V 10 2 5 typ. 0 0 50 100 C TA 150 10 1 0 50 100 C TA 150 Semiconductor Group Semiconductor Group 44 Apr-24-1998 1998-11-01 |
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