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| Silicon Dual Schottky Diode BAT 15-099 Preliminary Data Features DBS mixer application to 12 GHz q Low noise figure q Low barrier type q ESD: Electrostatic discharge sensitive device, observe handling precautions! Type BAT 15-099 Marking S5 Ordering Code (tape and reel) Q62702-A66 Pin Configuration Package1) P-SOT-143-4-6 Maximum Ratings Parameter Reverse voltage Forward current Power dissipation, TS 55 C Storage temperature range Operating temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Symbol VR IF Ptot Tstg Top Values 4 110 100 - 55 ... + 150 Unit V mA mW - 55 ... + 150 C Rth JA Rth JS 1090 930 K/W For detailed information see chapter Package Outlines. Package mounted on alumina 15 mm x 16.7 mm x 0.7 mm. Semiconductor Group 1 01.97 BAT 15-099 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Breakdown voltage IR = 5 A Forward voltage IF = 1 mA IF = 10 mA Forward voltage matching IF = 10 mA Diode capacitance VR = 0, f = 1 MHz Forward resistance IF = 10 mA/50 mA Symbol min. V(BR) VF - - VF CT RF - - - 0.23 0.32 - - 5.5 - - 20 0.35 - mV pF 4 Values typ. - max. - V Unit Semiconductor Group 2 BAT 15-099 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina If Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 BAT 15-099 S11-Parameters Typical impedance characteristics (with external bias I and Z0 = 50 ) f GHz 1 2 3 4 5 6 7 8 9 10 11 12 I = 0.02 mA MAG ANG 0.94 0.93 0.92 0.91 0.91 0.91 0.91 0.91 0.91 0.90 0.89 0.88 - 16.4 - 33.8 - 53.8 - 74.3 - 96.6 - 115.4 - 131.0 - 143.0 - 155.6 - 167.3 + 175.5 + 175.5 I = 0.05 mA MAG ANG 0.87 0.88 0.86 0.84 0.84 0.84 0.84 0.84 0.83 0.83 0.80 0.76 - 16.6 - 33.8 - 54.5 - 75.3 - 97.6 - 116.7 - 132.3 - 144.5 - 150.2 - 169.7 + 172.6 + 146.5 I = 0.1 mA MAG ANG 0.77 0.77 0.75 0.72 0.72 0.73 0.73 0.73 0.71 0.71 0.70 0.62 - 16.4 - 34.5 - 54.1 - 76.4 - 99.1 - 118.7 - 134.1 - 146.8 - 159.7 - 178.8 + 170.0 + 142.8 I = 0.2 mA MAG ANG 0.59 0.58 0.58 0.51 0.53 0.53 0.54 0.55 0.53 0.51 0.45 0.39 - 17.2 - 35.2 - 56.1 - 78.4 - 102.3 - 122.9 - 138.1 - 150.5 - 163.9 - 175.8 + 164.9 + 134.2 I = 0.5 mA MAG ANG 0.19 0.15 0.13 0.11 0.15 0.18 0.20 0.81 0.18 0.14 0.09 0.14 - 16.7 - 36.1 - 64.8 - 104.8 - 135.7 - 160.9 - 168.8 + 179.4 + 179.4 + 151.2 + 105.5 + 43.6 S11 = f (f, I) Semiconductor Group 4 |
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