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| BBY 51-03W Silicon Tuning Diode l High Q hyperabrupt tuning diode l Designed for low tuning voltage operation l For VCO's in mobile communications equipment Type BBY 51-03W Marking H Ordering Code (tape and reel) Q62702-B663 Pin Configuration Package 1 2 C1 A2 SOD-323 1) Maximum Ratings Parameter Reverse voltage Forward current Operating temperature range Storage temperature range Symbol BBY 51-03W 7 20 -55 +150C -55...+150C Unit V mA C C VR IF Top Tstg ______________________________ 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A01, 03.05.95 BBY 51-03W Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. Value typ. max. Unit DC Characteristics Reverse current VR = 6 V VR = 6 V, TA = 65 C Diode capacitance VR = 1 V, f = 1 MHz VR = 2 V, f = 1 MHz VR = 3 V, f = 1 MHz VR = 4 V, f = 1 MHz Capacitance ratio VR = 1 V, 4 V, f = 1 MHz Capacitance difference VR = 1 V, 3 V,f = 1MHz VR = 3 V, 4 V,f = 1MHz Series resistance VR = 1 V, f = 1 GHz Case capacitance f = 1 MHz Serien inductance IR 5.3 4.2 3.5 3.1 1.75 1.78 0.50 0.37 0.12 2 10 200 nA CT 4.5 3.4 2.7 2.5 6.1 5.2 4.6 3.7 pF CT1V/CT4V 1.55 2.2 pF C1V-C3V C3V-C4V rs CC Ls 1.4 0.30 - 2.2 0.7 pF nH ____________________ 1) Without 100 % test, correlation limits Semiconductor Group 2 Edition A01, 03.05.95 BBY 51-03W Dioden capacitance CT = f (VR*) f = 1 MHz Temperature coefficient of the diode capacitance TCC = f (VR), f = 1 MHz ppm/C T CC Semiconductor Group 3 Edition A01, 03.05.95 |
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