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HFA3127/883
February 1995
Ultra High Frequency Transistor Array
Description
The HFA3127/883 is an Ultra High Frequency Transistor Array fabricated on the Intersil Corporation complementary bipolar UHF-1 process. This array consists of five dielectrically isolated transistors on a common monolithic substrate. The high fT (8GHz) and low noise figure (3.5dB) of these transistors make them ideal for high frequency amplifier and mixer applications. The HFA3127/883 is an all-NPN array. Access is provided to each of the terminals of the individual transistors for maximum application flexibility. The monolithic construction of the array provides close electrical and thermal matching of the five transistors. SMD 5962-9474901MEA version is also available from Intersil Corporation.
Features
* This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. * NPN Transistor (fT). . . . . . . . . . . . . . . . . . . . .8GHz (Typ) * NPN Current Gain . . . . . . . . . . . . . . . . . . . . . . . 40 (Min) * NPN Early Voltage (VA) . . . . . . . . . . . . . . . . . . . 20 (Min) * Noise Figure (50) at 1.0GHz . . . . . . . . . . . 3.5dB (Typ) * Collector-to-Collector Leakage. . . . . . . . . . . <1pA (Typ) * Complete Isolation Between Transistors * Pin Compatible with Industry Standard 3XXX Series
Applications
* VHF/UHF Amplifiers * VHF/UHF Mixers * IF Converters * Synchronous Detectors
HFA3127MJ/883
Ordering Information
PART NUMBER TEMPERATURE -55oC to +125oC PACKAGE 16 Lead CerDIP
Pinout
HFA3127/883 (CERDIP) TOP VIEW
1 2 3 4 NC 5 6 7 8 Q3 Q4 Q2 Q5 Q1
16 15 14 13 12 11 10 9
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
File Number Spec Number
1
3967 511120
Specifications HFA3127/883
Absolute Maximum Ratings
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8.0V Collector to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.0V Emitter to Base Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.5V Collector Current at 100% Duty Cycle, 175oC TJ . . . . . . . . . 11.3mA Storage Temperature Range . . . . . . . . . . . . . . . . . . -65oC to 150oC Junction Temperature (DIE) . . . . . . . . . . . . . . . . . . . . . . . . . +175oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +300oC ESD Rating. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . <2000V
Thermal Information
Thermal Resistance JA JC CerDIP Package . . . . . . . . . . . . . . . . . . . 80oC/W 24oC/W Maximum Package Power Dissipation at +75o CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.25W Derating Factor Above +75oC CerDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .12.5mW/oC
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Collector-to-Base Breakdown Voltage SYMBOL V(BR)CBO CONDITIONS IC = 100A, IE = 0 GROUP A SUBGROUPS 1 2, 3 Collector-to-Emitter Breakdown Voltage V(BR)CEO IC = 100A, IB = 0 1 2, 3 Collector-to-Emitter Breakdown Voltage V(BR)CES IC = 100A, Base Shorted tp Emitter 1 2, 3 Emitter-to-Base Breakdown Voltage V(BR)EBO IE = 10A, IC = 0 1 2, 3 Collector-Cutoff Current ICEO VCE = 6V, IB = 0 1 2, 3 Collector-Cutoff Current ICBO VCB = 8V, IE = 0 1 2, 3 Collector-to-Emitter Saturation Voltage VCE(SAT) IC = 10mA, IB = 1mA 1 2, 3 Base-to-Emitter Voltage VBE IC = 10mA 1 2, 3 DC Forward Current Transfer Ratio hFE IC = 10mA, VCE = 2V 1 2, 3 Early Voltage VA IC = 10mA, VCE = 3.5V 1 2, 3 TEMPERATURE +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC +25oC +125oC to -55oC MIN 12 12 8 8 10 10 5.5 5.5 40 20 20 20 MAX 100 100 10 10 0.5 0.5 0.95 1.05 UNITS V V V V V V V V nA nA nA nA V V V V V V
Spec Number 2
511120
Specifications HFA3127/883
TABLE 2. ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 2 Intentionally Left Blank.
TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS
Table 3 Intentionally Left Blank.
TABLE 4. ELECTRICAL TEST REQUIREMENTS MIL-STD-883 TEST REQUIREMENTS Interim Electrical Parameters (Pre Burn-In) Final Electrical Test Parameters Group A Test Requirements Groups C and D Endpoints NOTE: 1. PDA applies to Subgroup 1 only. SUBGROUPS (SEE TABLE 1) 1 1 (Note 1), 2, 3 1, 2, 3 1
Spec Number 3
511120
HFA3127/883 Test Circuits
(Applies to Table 1)
100A
100A 100A 10A
V
V
V
V
BVCBO
BVCEO
BVCES
BVEBO
READ 10mA 10mA
A
6V
A
8V
A V
1mA
V
ADJ.
2V
ICEO
ICBO
VCE(SAT)
VBE
READ 10mA
MONITOR MONITOR
A
2V ADJ.
A
R ADJ. ADJUST
V
A
HFE
VA
Burn-In Circuit
100 5% 0.01F 5.5V 0.5V 0.01F 1 2 3 1K 5% 4 NC 5 6 7 1K 5% 8 Q3 Q4 Q2 Q5 Q1 16 15 14 13 12 11 10 9 1K 5% 1K 5% 1K 5%
10.5V 0.5V
Spec Number 4
511120
HFA3127/883 Die Characteristics
DIE DIMENSIONS: 52 x 52.8 x 15 1mils 1320m x 1340m x 381m 25.4m METALIZATION: Type: Metal 1: AlCu(2%)/TiW Thickness: Metal 1: 8kA 0.5kA Type: Metal 2: AlCu(2%) Thickness: Metal 2: 16kA 0.8kA GLASSIVATION: Type: Nitride Thickness: 4kA 0.5kA WORST CASE CURRENT DENSITY: 3.04 x 105A/cm2 TRANSISTOR COUNT: 5 SUBSTRATE POTENTIAL: Floating
Metallization Mask Layout
Pad numbers correspond to the 16 pin DIP pinout. HFA3127/883
2
1
16
15
3
14
4
13
5
12
6
11
7
8
9
10
Spec Number 5
511120
HFA3127
DESIGN INFORMATION
February 1995
Ultra High Frequency Transistor Array
The information contained in this section has been developed through characterization by Intersil Corporation and is for use as application and design information only. No guarantee is implied.
Electrical Specifications
at TA = +25oC TEST CONDITIONS f = 1.0GHz, VCE = 5V, IC = 5mA, ZS = 50 IC = 1mA, VCE = 5V IC = 10mA, VCE = 5V TYP 3.5 5.5 8 2.5 1 0V, 1MHz 0V, 1MHz 0V, 1MHz 1.6 2.2 1.9 UNITS dB GHz GHz GHz pA pF pF pF
PARAMETERS Noise Figure fT Current Gain-Bandwidth Product
Power Gain-Bandwidth Product, fMAX Collector-to-Collector Leakage Collector-to-Base Capacitance Base-to-Emitter Capacitance Collector-to-Emitter Capacitance
IC = 10mA, VCE = 5V
NOTE: Package interlead capacitance is taken into account for all capacitance measurements.
Typical Performance Curves
25 COLLECTOR CURRENT (mA) IB = 200A IB = 160A IB =120A 100m COLLECTOR CURRENT AND BASE CURRENT (A) 10m 1m 100 10 1 100n 10n 0 1 2 3 4 COLLECTOR TO EMITTER VOLTAGE (V) 5 1n 0.5 0.6 0.7 0.8 0.9 BASE TO EMITTER VOLTAGE (V) 1.0 VCE = 3V IC IB
20
15
10
IB = 80A IB = 40A
5
FIGURE 1. NPN COLLECTOR CURRENT vs COLLECTOR TO EMITTER VOLTAGE
VCE = 3V
FIGURE 2. NPN COLLECTOR AND BASE CURRENTS vs BASE TO EMITTER VOLTAGE
10.0 GAIN BANDWIDTH PRODUCT (GHz) VCE = 3V 8.0 VCE = 5V 6.0 VCE = 1V
DC CURRENT GAIN
160 140 120 100 80 60 40 20 0 1 10 100 1m 10m 100m
4.0
2.0
0 0.1
1.0
10
100
COLLECTOR CURRENT (A)
COLLECTOR CURRENT (mA)
FIGURE 3. NPN DC CURRENT GAIN vs COLLECTOR CURRENT
FIGURE 4. NPN GAIN BANDWIDTH PRODUCT vs COLLECTOR CURRENT (UHF 3 x 50 WITH BOND PADS)
Spec Number 6
511120
HFA3127 Ceramic Dual-In-Line Frit Seal Packages (CerDIP)
c1 -A-DBASE METAL E b1 M -Bbbb S BASE PLANE SEATING PLANE S1 b2 b ccc M C A-B S AA C A-B S D Q -CA L DS M (b) SECTION A-A (c) LEAD FINISH
F16.3 MIL-STD-1835 GDIP1-T16 (D-2, CONFIGURATION A)
16 LEAD CERAMIC DUAL-IN-LINE FRIT SEAL PACKAGE INCHES SYMBOL A b b1 b2 b3 c MIN 0.014 0.014 0.045 0.023 0.008 0.008 0.220 MAX 0.200 0.026 0.023 0.065 0.045 0.018 0.015 0.840 0.310 MILLIMETERS MIN 0.36 0.36 1.14 0.58 0.20 0.20 5.59 MAX 5.08 0.66 0.58 1.65 1.14 0.46 0.38 21.34 7.87 NOTES 2 3 4 2 3 5 5 6 7 2, 3 8 Rev. 0 4/94
eA
c1 D E e eA eA/2 L Q S1
e
DS
eA/2
c
0.100 BSC 0.300 BSC 0.150 BSC 0.125 0.015 0.005 90o 16 0.200 0.060 105o 0.015 0.030 0.010 0.0015
2.54 BSC 7.62 BSC 3.81 BSC 3.18 0.38 0.13 90o 16 5.08 1.52 105o 0.38 0.76 0.25 0.038
aaa M C A - B S D S
NOTES: 1. Index area: A notch or a pin one identification mark shall be located adjacent to pin one and shall be located within the shaded area shown. The manufacturer's identification shall not be used as a pin one identification mark. 2. The maximum limits of lead dimensions b and c or M shall be measured at the centroid of the finished lead surfaces, when solder dip or tin plate lead finish is applied. 3. Dimensions b1 and c1 apply to lead base metal only. Dimension M applies to lead plating and finish thickness. 4. Corner leads (1, N, N/2, and N/2+1) may be configured with a partial lead paddle. For this configuration dimension b3 replaces dimension b2. 5. This dimension allows for off-center lid, meniscus, and glass overrun. 6. Dimension Q shall be measured from the seating plane to the base plane. 7. Measure dimension S1 at all four corners. 8. N is the maximum number of terminal positions. 9. Dimensioning and tolerancing per ANSI Y14.5M - 1982. 10. Controlling dimension: INCH.
aaa bbb ccc M N
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (321) 724-7000 FAX: (321) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
Spec Number 7
511120

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