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InSb Hall Element
HW-108C
*High-linearity InSb Hall element. *Super mini-mold SMT package (fits SOT 343 land pattern). *Shipped in packet-tape reel (4000pcs per reel).
Note : It is requested to read and accept "IMPORTANT NOTICE".
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*Absolute Maximum Ratings
Item Symbol Limit Unit
Max. Input Current
Ic
Const. Current Drive
20
mA
Operating Temp. Range
Topr.
-40 to +110
C
Storage Temp. Range
Tstg.
-40 to +125
C
*Classification of Output Hall Voltage (VH)
Rank VH [ mV ] Conditions
*Electrical Characteristics(Ta=25C)
Item Symbol Conditions Min. Typ. Max. Unit Q 41 to 57 B=50mT, Vc=IV Constant Voltage Drive R 250 250 -7 450 450 51 to 74
Output Hall Voltage
VH
Const. Voltage Drive
B=50mT, Vc=IV B=0mT, Ic=0.1mA B=0mT, Ic=0.1mA B=0mT, Vc=IV
41
74
mV
Input Resistance Output Resistance Offset Voltage
Rin Rout Vos
*Input Current Derating Curve
+7 mV
Temp. Coefficient of VH
VH
B=50mT, Ic=5mA
20
-1.8 %/C Input Current(mA)
Input Resistance Rin : 250 to 450 450
Temp. Coefficient of Rin
Rin
B=0mT, Ic=0.1mA
-1.8
%/C
10
Dielectric Strength
100V D.C
1.0
M
Notes : 1. VH = VHM - Vos (VHM:meter indication)
1 -V 2. VH = VH (T1) X VH (T3) - T H) (T2) X 100 (T3 2 1 -R 3. Rin = Rin (T1) X Rin (T3) - T in (T2) X 100 (T )
3 2
T1 = 20C, T2 = 0C, T3 = 40C
0 -60
-40
- 20
0
20
40
60
80
100
120
Ambient Temperature.(C) Note : Rin of Hall element decreases rapidly as ambient temperature increases. Ensure compliance with input current derating curve envelope, throughout the operating temperature range.
0.25
*Dimensional Drawing (mm)
2.10.1 0.4 1.3 0.4 0.3
*Input Voltage Derating Curve
Input Resistance 2.0
Input Voltage(V) Rin : 250 to 450
2
1.250.1 2.10.2
1
0 to 0.1
N
5 5
3
4
0.1
1.0
0.25
5
+0.1 0.8 0
0.55
Pinning
5
0 -60
3 4 () ()
-40
- 20
0
20
40
60
80
100
120
Input Output
1() 2()
Ambient Temperature.(C) Note : For constant-voltage drive, stay within this input voltage derating curve envelope.
33
HW-108C
*Characteristic Curves
Rin-T
1600 1400
Input Resistance:Rin( ) Output Voltage:VH(mV)
VH-B
100 90 80 70 60 50 40 30 20 10 0 50
Ambient Temperature(C) Ic const Vc const Ic = 5 (mA) Vc = 1 (V) Ta = 25 (C)
b
1200 1000 800 600 400 200 0 -50 100 150
Ic
Vin
c
0 0
10
20
30
40
50
Magnetic Flux Density B (mT)
VH-T
390 360 330 Ic 300 270 240 210 180 150 120 90 Vin 60 30 0 -50
Ic const Vc const
VH-Vc, VH-Ic
300 250 200 150 100 50 0 0.0 5 0.5 10 1.0
Ic (mA) Input Current Vc (V) Input Voltage Ic const Vc const B = 50 (mT) Ta = 25 (C)
Output Voltage:VH(mV)
Output Voltage:VH(mV)
Ic = 5 (mA) Vc = 1 (V) B = 50 (mT)
Ic
Vin
g
15 1.5 20 Ic:(mA) 2.0 Vc:(V)
0
50
Ambient Temperature(C)
100
150
Vos-T
20
Ic const Vc const
Vos-Vc, Vos-Ic
20 18
Offset Voltage:Vos(mV) Ic const Vc const B = 0 (mT) Ta = 25 (C)
Offset Voltage:Vos(mV)
16 14 12 10 8 6 4
Ic = 5 (mA) Vc = 1 (V) B = 0 (mT)
i
Ic
Ic 10
Vin 0 -50 0 50
Ambient Temperature(C)
Vin
5
2 100 150 0 0.0 10 1.0
Ic (mA) Input Current Vc (V) Input Voltage
15 1.5
0.5
20 Ic:(mA) 2.0 Vc:(V)
*Magnetic Flux Density 1(mT)=10(G)
In This Example : Rin=340( ), Vos=2.4(mV), Vc=1(V)
34

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