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MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
DESCRIPTION
The M62021 is a system IC that controls the memory backup function of SRAM and microcomputer (internal RAM). The IC outputs reset signals(RES/RES) to a microcomputer at power-down and power failure.It also shifts the power supply to RAM from main to backup,outputs a signal (CS) that invokes standby mode,and alters RAM to backup circuit mode. The M62021 contains,in a single chip,power supply monitor and RAM backup functions needed for a microcomputer system,so that the IC makes it possible to construct a system easily and with fewer components compared with a conventional case that uses individual ICs and discrete components.
PIN CONFIGURATION (TOP VIEW)
8 7 6 5 4 3 2 1
CS RES GND RES Ct(DELAY CAPACITANCE) VIN VBAT VOUT
FEATURES
*Built-in switch for selection between main power supply and backup power supply to RAM. *Small difference between input and output voltage (IOUT=80mA,VIN=5V)0.2V typ *Detection voltage (power supply monitor voltage)4.40V0.2V *Chip select signal output(CS) Two channels of reset outputs(RES/RES) *Power on reset circuit built-in *Delay time variable by an external capacitance connected to Ct pin *Facilitates to form backup function with a few number of components VOUT VBAT VIN Ct(DELAY CAPACITANCE)
Outline 8P5(L)
1 2 3 4 8 7 6 5
CS RES GND RES
Outline 8P4(P) 8P2S-A(FP)
APPLICATION
Power supply control systems for memory backup of microcomputer system and SRAM boards with built-in backup function that require switching between external power supply and battery.
BLOCK DIAGRAM
SW
VIN
3
R1 D1
1 +
1.24V Com
RESET CIRCUIT
VOUT VBAT CS
2 8
R2
RES RES
7 5
DELAY CIRCUIT
4
Ct
6
GND
MITSUBISHI ELECTRIC
( 1 /9)
MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
ABSOLUTE MAXIMUM RATINGS(Ta=25C, unless otherwise noted)
Symbol VIN IOUT Pd K Topr Tstg Parameter Input voltage Output current Power dissipation Thermal derating Operating temperature Storage temperature (Ta25C) Conditions Ratings 7 100 800(SIP)/625(DIP)/440(FP) 8(SIP)/6.25(DIP)/4.4(FP) -20 ~ +75 -40 ~ +125 Unit V mA mW mW/C
C C
ELECTRICAL CHARACTERISTICS(Ta=25C, unless otherwise noted)
Symbol Vs Vs Vs/T ICC VDROP Parameter Detection voltage Hysteresis voltage
Temperature coefficient of detection voltage
Test conditions VIN(At the change from H Vs=VSH-VSL IOUT=0mA VIN=4V VIN=5V IOUT=50mA IOUT=80mA L)
Min. 4.2 50
Limits Typ. 4.4 100 0.005 2.0 7.5 0.125 0.2 5.0 0.02 4.0 0.02 0.05
Max. 4.6 200 4.0 12.0 0.25 0.4 0.1
Unit V mV %/C mA V V V V
Circuit current
Difference between input and output voltage VIN=5V
VOH(Ct) Ct output voltage (high level) VOL(Ct) Ct output voltage (low level) VOH(RES) RES output voltage (high level) VOL(RES) RES output voltage (low level) VOH(RES) RES output voltage (high level) VOL(RES) RES output voltage (low level) VOH(CS) CS output voltage (high level) VOL(CS) CS output voltage (low level) IR VF tpd td Backup Di leak current Backup Di forward direction voltage Delay time Response time
VIN=5V(Note1) VIN=4V(Note1) VIN=4V(Note1) VIN=5V VIN=5V(Note1) VIN=4V VIN=4V (Note2) VIN=0V,VBAT=3V (Note2) (Note1) VIN=5V ISINK=1mA VIN=5V VBAT=3V VIN=0V IF=10A 5V,Ct=4.7F VIN=0V VIN=5V (Note 3) 4V (Note1) ISINK=1mA (Note1) ISINK=1mA
4.5 3.5
0.2
V V
4.5
5.0 0.02 0.05 0.2
V V V A V ms s V
3.50 2.40
3.57 2.47 0.08 0.1
10
0.54 27 5.0 0.65
0.3 0.5 0.5 0.6 55 25.0
VOPL(RES) RES limit voltage of operation
Note 1.Regarding conditions to measure VOH and VOL,voltage values are to be generated by internal resistance only and no external resistor is used. 2.These values are produced inserting an external resistor,RCS=1M,between the CS pin and GND. 3.With no external resistor (10k internal resistance only)
MITSUBISHI ELECTRIC
( 2 /9)
MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
TEST CIRCUIT
V
VIN SW2 Vm2
M62021 1
R1 D1
A
3
VOUT
SW5 SW4 2 3 IF2 Vm3
1 2 3 4 5 6
SW6
Vm1
V
V1 1
SW1 2
Im1
R2
+ 1.24V
Com
RESET CIRCUIT DELAY CIRCUIT
2 VBAT
1 Im2
SW7 1 2 Vm4 IF1
CRT
V
8 CS 4 Ct
A
V2
V
RES RES
7 5
6 GND
SW3
4.7
SWITCH MATRIX
Symbol Icc Vs (VSL) VDROP Parameter Circuit current Detection voltage (VIN negative-going) VOUT CS Ct RES RES V1 4V 5V
Decrease from 5V
V2
IF1
IF2
1 1
2
S 3 4
W 5
Measuring
6
7 1
instrument
1
ON OFF 1 OFF 1 2 3 ON OFF 1 OFF 4 5 6 ON OFF 1 OFF 2 ON OFF 1 OFF 4
Im1 (Note5) Vm4 CRT Vm1 Vm2 Vm4 Vm4 Vm4
1
Difference between input and output voltage
5V 5V 4V 4V 5V 5V 4V 4V 0V 5V 5V 0V 0V 3V 3V
-50mA -80mA
1 1 1
2 1 1 2 1 2 1 2
VOH(Ct) Ct output voltage(high level) VOL(Ct) Ct output voltage(low level) VOH(RES) RES output voltage(high level) VOL(RES) RES output voltage(low level) VOH(RES) RES output voltage(high level) VOL(RES) RES output voltage(low level) VOH(CS) VOL(CS) IR VF tpd td CS output voltage(high level)(Note 4) CS output voltage(low level) Backup Di leak current Backup Di forward direction voltage Delay time Response time VOUT CS RES RES
ON OFF 1 OFF 5 ON OFF 1 OFF 6
1mA 1 1mA 1 1mA 1 10A 1 2
(Note6)
ON OFF 1 OFF 3 ON OFF 2 OFF 1 ON OFF 3 ON ON
(Note7)
Vm4 Im2 Vm3 CRT
1 1 1
ON
1
2 1 OFF 3 5 6
Notes 4.To measure VOH(CS),insert a 1M resistor between the CS pin and GND. 5. While monitoring each output by Vm4 or CRT,measure the input voltage Vm1 when the output goes from H to L and L to H.Regarding VSH,raise VIN from 4V and measure the input voltage Vm1 when the output goes from H to L and L to H.Vs is VSH-VSL. 6. To measure delay time, change VIN from 0V to 5V and compare,with respect to each pin,the positive-going edge observed on a monitor with that of VIN.To measure response time,change VIN from 5V to 4V and compare,with respect to each pin,the negative-going edge observed on a monitor with that of VIN. 7.Set the switch to OFF when measuring response time.
MITSUBISHI ELECTRIC
( 3 /9)
MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
EXPLANATION OF TERMINALS
Pin No. Symbol Name Function
1
VOUT
2 3 4 5 6 7
VBAT VIN Ct RES GND RES
8
CS
VIN and VBAT are controlled by means of an internal switch and output through VOUT Power supply output The pin is capable of outputting up to 100mA.Use it as VDD of CMOS RAM and the like Backup power supply is connected to this pin Backup power supply input If a lithium battery is used,insert a resistor in series for safety purposes +5V input pin.Connect to a logic power supply. Power supply input A delay capacitor is connected to this pin.By connecting a capacitor,it is Delay capacitor connection pin possible to delay each output Connect to the positive reset input of a microcomputer.The pin is capable Positive reset output of flowing 1mA sink current Ground Reference for all signals Connect to the negative reset input of a microcomputer.The pin is capable Negative reset output of flowing 1mA sink current Connect to the chip select of RAM.The CS output is at low level in normal state thereby letting RAM be active.Under failure or backup condition,the CS Chip select output output is set to high level,then RAM enters standby state disabling read/write function.The pin is capable of flowing a 1mA sink current
APPLICATION EXAMPLE
+5V (MAIN POWER SUPPLY) CIN
M62021 VIN 3 R1 R2 D1 1 VOUT VBAT
VIN VDD CONT BATTERY CMOS 3V
VDD
+ 1.24V
Com
RESET CIRCUIT
2
8 CS
DELAY CIRCUIT
RES RES CPU
RAM
7 5
4
Ct
6 GND *Capacitance to be connected:CIN:10F;COUT:4.7F;Ct:4.7F *If connecting a zener diode,select one of VZ=2~3V
MITSUBISHI ELECTRIC
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MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
CONFIGURATION
The internal reference voltage Vref is compared by means of a comparator with resistor-divided voltage VR(resistor-divided voltage produced by R1 and R2 from VIN). If the input voltage is 5V,VR is set to 1.24V or higher,so the comparator output is at low level and the Ct output(Q1 collector output)is set to high level.If the input voltage drops to below 4.4V in an abnormal condition,VR becomes below 1.24V,so the comparator output goes from low to high level and the Ct output,from high to low.The input voltage at this point is called VSL.Next,when the input voltage,restored from abnormal state,has a rise,the comparator output goes from high to low level and the Ct output,from low to high. The comparator used for detection has 100mV hysteresis(Vs),so that malfunctioning is prevented in case that the input voltage slowly drops or VR nearly equals Vref. Connecting an external capacitor to the Ct pin lets RES,RES,CS,and VOUT be delayed due to RC transient phenomenon(electric charge). Delay time is determined as follows. Delay time(tpd)= Ct X (R3 + R4) X In =Ct X 22k X 0.2614 . =5.75 X 10 3 X Ct . [VOH(Ct)-VOL(Ct)] [VOH(Ct)-INV1(VTH)] *Ct is an external capacitance.
5 4 3 2
VSL VSH Vs
1 0 4.0 4.2 4.4 4.6 4.8 5.0 INPUT VOLTAGE VIN(V)
tpd
VOH(Ct) INV1(Vth) VOL(Ct)
DELAYED OUTPUT WAVEFORMS OF Ct
Taking into consideration the time taken by the oscillator of microcomputer to be stable,connect a 4.7F capacitor to the Ct pin. (As the response time of detection can be slowed due to internal structure depending on the rising rate of power supply,avoid connecting a too large capacitance. Since waveforms show a gentle rise due to the RC delay circuit,INV1,INV2,R5,and R6 constitute a schmitt trigger circuit to produce hysteresis so as to prevent each output from chattering.
INTERNAL CIRCUIT
Ct
4
VIN
3
RES
5
RES
7
Q4 R1 60.94k Com R3 22k R4 47 Q1 R6 R5 10k INV1 INV2 INV3 INV4 Q3 INV5 INV6 INV7 R9 5k R10 INV8 INV9 22k R7 10k R8 10k Q2 R10 800 R11 10k D1
1
VOUT
2
VBAT
8
R2 24K
CS
Vref 1.24V
Q5
6
GND
MITSUBISHI ELECTRIC
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MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
TIMING CHART
tpd 5V VIN 0V
tpd
Vs
VSH VSL
VOUT
V1 V2 V3 V4 V5
CS
V2 V4 V5
VOL(CS) 5V VIN(VSL)
RES VOL(RES) VOL(RES) VIN(VSL)
RES V1=VIN-VDROP V2=VIN-Q4VEB(Di) V3=VIN(VSL)-VDROP
VOL(RES) V4=VIN(VSL)-Q4VEB(Di) V5=VBAT-VF
Input voltage
In normal operation
In failure(instantaneous drop)
Input voltage:5V 4V Each output varies if the input voltage drops to VSL or under
Restoration from failure (instantaneous drop)
In backup state
Input voltage:5V
Output pin VOUT
With Q4 set to ON, a voltage (VIN-VDROP)is output The output level is VOL(RES) with a logic low The output level is VOH(RES) with a logic low The output level is VOL(CS) with a logic low Q4 is turned OFF.A voltage (VIN-Q4 VEB(Di) is output by the diode between E and B of Q4 As the state shifts from a logic low to logic high,the output level becomes approximately equal to the input voltage
Input voltage:0V Input voltage:4V 5V Backup voltage:3V If the input voltage goes higher than VSL by 100mV,each out-put varies after delay produced by the delay circuit Q4 is turned ON after delay and a voltage(VIN-VDROP) is output VBAT-VF
RES
A logic high is maintained,and than shifts to a logic high
RES
As the state shifts from a logic A logic low is held,and than shifts high to logic low,the output level to a logic high becomes VOL(RES) As the state shifts from a logic A logic high is maintained,and than The output is a logic high low to logic high,the output level shifts to a logic high and the output level is becomes the voltage VINVBAT-VF Q4EB(Di).
CS
MITSUBISHI ELECTRIC
( 6 /9)
MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
TYPICAL CHARACTERISTICS
THERMAL DERATING (MAXIMUM RATING) CIRCUIT CURRENT VS. INPUT VOLTAGE
1000
M62021L
16 14 12 10
M62021FP
800
M62021P
600 400 200 0
8 6 4 2
0
25
50
75
100
125
0
0
1
2
3
4
5
6
7
8
AMBIENT TEMPERATURE Ta(C) DETECTION VOLTAGE VS. AMBIENT TEMPERATURE
INPUT VOLTAGE Vcc(V) INTERRUPTION OUTPUT VOLTAGE VS. SUPPLY VOLTAGE
4.48 4.46 4.44 4.42 4.40 4.38 4.36 4.34 4.32 -40 -20 0 20 40 60 80 100 120
140 130 120 110 100 90 80 70 60 -40 -20 0 20 40 60 80 100 120
AMBIENT TEMPERATURE Ta(C) CIRCUIT CURRENT VS. AMBIENT TEMPERATURE
AMBIENT TEMPERATURE Ta(C) CIRCUIT CURRENT VS. AMBIENT TEMPERATURE
10 9 8 7 6 5 4 3
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5
VIN=5V
VIN=4V
2 -40 -20 0
20 40 60 80 100 120
0 -40 -20 0
20 40 60 80 100 120
AMBIENT TEMPERATURE Ta(C)
AMBIENT TEMPERATURE Ta(C)
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MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
OUTPUT CURRENT VS. DIFFERENCE BETWEEN INPUT AND OUTPUT VOLTAGES DIFFERENCE BETWEEN INPUT AND OUTPUT VOLTAGES VS. AMBIENT TEMPERATURE
100 80 60 40 20
400 350 300
VIN=5V
VIN=5V
250 IOUT=100mA 200 IOUT=80mA 150 IOUT=50mA 100 50
0
0
50
100
150
200
250
0 -40 -20
0
20 40 60 80 100 120
DIFFERENCE BETWEEN INPUT AND OUTPUT VOLTAGES VDROP(mV) BACKUP Di FORWARD DIRECTION CURRENT VS. VOLTAGE
AMBIENT TEMPERATURE Ta(C) BACKUP Di FORWARD DIRECTION VOLTAGE VS. AMBIENT TEMPERATURE
160 140 120 100 80 60 40 20 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 -40 -20 0 20 40 60 80 100 120 IF=1A IF=100A IF=10A
BACKUP Di FORWARD DIRECTION VOLTAGE VF(V)
AMBIENT TEMPERATURE Ta(C)
RES"L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE
80 70 60 50 40 30 20 10 0 -40 -20 0 20 40 60 80 100 120 VIN=5V ISINK=1mA
80 70 60 50 40 30 20 10
RES "L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE
VIN=4V ISINK=1mA
0 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE Ta(C)
AMBIENT TEMPERATURE Ta(C)
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MITSUBISHI
M62021L,P,FP
SYSTEM RESET IC WITH SWITCH FOR MEMORY BACK-UP
CS"L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE
160 140 120 100 80 60 40 20 0 -40 -20 0 20 40 60 80 100 120 VIN=5V ISINK=1mA
4.0 3.8 3.6 3.4 3.2 3.0 2.8 2.6
CS"L"OUTPUT VOLTAGE VS. AMBIENT TEMPERATURE
VIN=4V RCS=1M
2.4 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE Ta(C)
AMBIENT TEMPERATURE Ta(C)
1000
DELAY TIME VS.EXTERNAL CAPACITANCE CONNECTED TO THE Ct PIN
7 5 3 2
40 35 30 25 20 15 10 5
DELAY TIME VS.AMBIENT TEMPERATURE
VIN=0V
5V
VIN=0V 5V Ct=4.7A
100
7 5 3 2
10
7 5 3 2
0 0.1
2 3 57
1
23
57
10
23
57
100
0 -40 -20
0
20 40 60 80 100 120
AMBIENT TEMPERATURE Ta(C) EXTERNAL CAPACITANCE CONNECTED TO THE Ct PIN Ct(F)
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