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IIIIIIIIIIIIIIIIIIIIIII I II II I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII II III I II IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII III I II IIIIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII III I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIII * * * * * These ratings are applicable when surface mounted on the minimum pad size recommended. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data Preferred devices are Motorola recommended choices for future use and best overall value. DPAK For Surface Mount Applications Complementary Power Transistors SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS REV 1 Lead Temperature for Soldering Purposes Thermal Resistance, Junction to Ambient* Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation* @ TA = 25_C Derate above 25_C Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix) Straight Lead Version in Plastic Sleeves ("-1" Suffix) Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix) Electrically Similar to Popular TIP31 and TIP32 Series Characteristic Rating Symbol Symbol TJ, Tstg VCEO RJC RJA VCB VEB PD PD TL IC IB MJD31 MJD32 40 40 - 65 to + 150 1.56 0.012 Max 15 0.12 260 8.3 80 1 3 5 5 MJD31C MJD32C 100 100 Watts W/_C Watts W/_C _C/W _C/W Unit Unit Adc Adc Vdc Vdc Vdc _C _C SILICON POWER TRANSISTORS 3 AMPERES 40 AND 100 VOLTS 15 WATTS MINIMUM PAD SIZES RECOMMENDED FOR SURFACE MOUNTED APPLICATIONS MJD31,C* PNP MJD32,C* *Motorola Preferred Device CASE 369A-13 CASE 369-07 Order this document by MJD31/D NPN inches mm 1 0.243 6.172 0.063 1.6 0.118 3.0 0.07 1.8 0.165 4.191 0.190 4.826 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II II II I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIII II II I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII II II II I IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIII I I III I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJD31,C MJD32,C (1) Pulse Test: Pulse Width (2) fT = hfe* ftest. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS (1) OFF CHARACTERISTICS ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Emitter Cutoff Current (VBE = 5 Vdc, IC = 0) Collector Cutoff Current (VCE = Rated VCEO, VEB = 0) Collector Cutoff Current (VCE = 40 Vdc, IB = 0) (VCE = 60 Vdc, IB = 0) Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0) Small-Signal Current Gain (IC = 0.5 Adc, VCE = 10 Vdc, f = 1 kHz) Current Gain -- Bandwidth Product (2) (IC = 500 mAdc, VCE = 10 Vdc, ftest = 1 MHz) Base-Emitter On Voltage (IC = 3 Adc, VCE = 4 Vdc) Collector-Emitter Saturation Voltage (IC = 3 Adc, IB = 375 mAdc) DC Current Gain (IC = 1 Adc, VCE = 4 Vdc) (IC = 3 Adc, VCE = 4 Vdc) 2 v 300 s, Duty Cycle v 2%. Characteristic MJD31, MJD32 MJD31C, MJD32C MJD31, MJD32 MJD31C, MJD32C VCEO(sus) VCE(sat) VBE(on) Symbol ICEO IEBO ICES hFE hfe fT Motorola Bipolar Power Transistor Device Data Min 40 100 20 25 10 -- -- -- -- -- 3 Max 1.8 1.2 20 50 -- 50 -- -- -- -- 1 mAdc Adc Adc MHz Unit Vdc Vdc Vdc -- -- MJD31,C MJD32,C TYPICAL CHARACTERISTICS TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 25 s 2 20 +11 V 0 1.5 15 TA (SURFACE MOUNT) TC -9 V tr, tf 10 ns DUTY CYCLE = 1% 51 -4 V D1 RB VCC + 30 V RC SCOPE 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) 125 150 RB and RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1 MUST BE FAST RECOVERY TYPE, e.g.: 1N5825 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA REVERSE ALL POLARITIES FOR PNP. Figure 1. Power Derating Figure 2. Switching Time Test Circuit 500 300 hFE, DC CURRENT GAIN TJ = 150C 25C t, TIME ( s) - 55C VCE = 2 V 2 1 0.7 0.5 0.3 tr @ VCC = 30 V IC/IB = 10 TJ = 25C 100 70 50 30 tr @ VCC = 10 V 0.1 0.07 0.05 0.03 0.02 0.03 td @ VBE(off) = 2 V 10 7 5 0.03 0.05 0.07 0.1 0.3 0.5 0.7 1 3 0.05 0.07 0.1 0.3 0.5 0.7 1 3 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 3. DC Current Gain Figure 4. Turn-On Time 1.4 1.2 V, VOLTAGE (VOLTS) 1 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE @ VCE = 2 V 0.4 0.2 VCE(sat) @ IC/IB = 10 t, TIME ( s) TJ = 25C 3 2 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.1 0.2 0.3 0.5 1 23 0.03 0.03 0.05 0.07 0.1 0.2 tf @ VCC = 10 V tf @ VCC = 30 V ts IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C 0 0.003 0.005 0.01 0.02 0.03 0.05 0.3 0.5 0.7 1 2 3 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 5. "On" Voltages Figure 6. Turn-Off Time Motorola Bipolar Power Transistor Device Data 3 MJD31,C MJD32,C VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 2 TJ = 25C 1.6 IC = 0.3 A 1A 3A CAPACITANCE (pF) 300 TJ = + 25C 200 1.2 100 Ceb 70 50 Ccb 0.8 0.4 0 1 2 5 10 20 50 100 IB, BASE CURRENT (mA) 200 500 1000 30 0.1 0.2 0.3 0.5 1 10 23 5 VR, REVERSE VOLTAGE (VOLTS) 20 30 40 Figure 7. Collector Saturation Region Figure 8. Capacitance r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.01 0.01 D = 0.5 0.2 0.1 0.05 0.01 SINGLE PULSE RJC(t) = r(t) RJC RJC = 8.33C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk) t1 t2 DUTY CYCLE, D = t1/t2 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 23 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 9. Thermal Response 10 IC, COLLECTOR CURRENT (AMPS) 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 dc WIRE BOND LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT CURVES APPLY BELOW RATED VCEO TC = 25C SINGLE PULSE TJ = 150C MJD31, MJD32 MJD31C, MJD32C 3 5 7 10 20 30 50 70 100 150 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 s 500 s 1 ms 0.01 1.5 2 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 10 is based on T J(pk) = 150_C; T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. T J(pk) may be calculated from the data in Figure 9. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v Figure 10. Active Region Safe Operating Area 4 Motorola Bipolar Power Transistor Device Data MJD31,C MJD32,C PACKAGE DIMENSIONS -T- B V R 4 SEATING PLANE C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.175 0.215 0.020 0.050 0.020 --- 0.030 0.050 0.138 --- MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.45 5.46 0.51 1.27 0.51 --- 0.77 1.27 3.51 --- S 1 2 3 A K F L D G 2 PL Z U J H 0.13 (0.005) T DIM A B C D E F G H J K L R S U V Z M STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 369A-13 ISSUE W B V R 4 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D E F G H J K R S V INCHES MIN MAX 0.235 0.250 0.250 0.265 0.086 0.094 0.027 0.035 0.033 0.040 0.037 0.047 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.175 0.215 0.050 0.090 0.030 0.050 MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.84 1.01 0.94 1.19 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.46 1.27 2.28 0.77 1.27 A 1 2 3 S -T- SEATING PLANE K F D G 3 PL M J H 0.13 (0.005) T STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR CASE 369-07 ISSUE K Motorola Bipolar Power Transistor Device Data 5 MJD31,C MJD32,C Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *MJD31/D* MJD31/D |
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