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| Silicon RF Switching Diode q BA 582 For low-loss VHF band switching in TV/VTR tuners Type BA 582 Marking blue S Ordering Code Pin Configuration Q62702-A829 Package1) SOD-123 Maximum Ratings Parameter Reverse voltage Forward current, TA 60 C Operation temperature range Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR IF Top Tstg Values 35 100 - 55 ... + 150 Unit V mA - 55 ... + 125 C 600 K/W 1) For detailed information see chapter Package Outlines. Semiconductor Group 1 07.94 BA 582 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Forward voltage IF = 100 mA Reverse current VR = 20 V Diode capacitance f = 1 MHz VR = 1 V VR = 3 V Forward resistance f = 100 MHz IF = 3 mA IF = 10 mA Reverse resistance VR = 1 V, f = 100 MHz Series inductance Symbol min. VF IR CT - 0.6 rf - - 1/gp LS - - 0.45 0.38 100 2.8 0.7 0.5 - - k nH 0.92 0.85 1.4 1.1 - - Values typ. - - max. 1 20 V nA pF Unit Diode capacitance CT = f (VR) f = 1 MHz Forward resistance rf = f (IF) f = 100 MHz Semiconductor Group 2 |
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