 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| NPN Silicon AF Transistors BC 846 ... BC 850 Features q q q q q For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type BC 846 A BC 846 B BC 847 A BC 847 B BC 847 C BC 848 A BC 848 B BC 848 C BC 849 B BC 849 C BC 850 B BC 850 C Marking 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs Ordering Code (tape and reel) Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 Q62702-C1885 Q62702-C1712 Pin Configuration 1 2 3 B E C Package1) SOT-23 1)For detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 846 ... BC 850 Maximum Ratings Parameter Symbol BC 846 Collector-emitter voltage Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Peak collector current Peak base current Peak emitter current Total power dissipation, TS = 71 C Junction temperature Storage temperature range Thermal Resistance Junction - ambient1) Junction - soldering point Rth JA Rth JS Values BC 847 BC 850 45 50 50 6 100 200 200 200 330 150 Unit BC 848 BC 849 30 30 30 5 mA V VCE0 VCB0 VCES VEB0 IC ICM IBM IEM Ptot Tj Tstg 65 80 80 6 mW C - 65 ... + 150 310 240 K/W 1)Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/6 cm2 Cu. Semiconductor Group 2 BC 846 ... BC 850 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 846 BC 847, BC 850 BC 848, BC 849 Collector-base breakdown voltage IC = 10 A BC 846 BC 847, BC 850 BC 848, BC 849 Collector-emitter breakdown voltage IC = 10 A, VBE = 0 BC 846 BC 847, BC 850 BC 848, BC 849 Emitter-base breakdown voltage IE = 1 A BC 846, BC 847 BC 848, BC 849, BC 850 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 C DC current gain IC = 10 A, VCE = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B ... BC 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C IC = 2 mA, VCE = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B ... BC 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V 1)Pulse Values typ. max. Unit V(BR)CE0 65 45 30 V(BR)CB0 80 50 30 V(BR)CES 80 50 30 V(BR)EB0 6 5 ICB0 - - hFE - - - 110 200 420 VCEsat - - VBEsat - - VBE(on) 580 - 660 - 700 770 700 900 - - 90 200 250 600 140 250 480 180 290 520 - - - 220 450 800 - - 15 5 - - - - - - - - - - - - - - - - - - - - - - V nA A - mV test: t 300 s, D = 2 %. Semiconductor Group 3 BC 846 ... BC 850 Electrical Characteristics at TA = 25 C, unless otherwise specified. Parameter Symbol min. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz Output capacitance VCB = 10 V, f = 1 MHz Input capacitance VCB = 0.5 V, f = 1 MHz Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A ... BC 848 A BC 846 B ... BC 850 B BC 847 C ... BC 850 C Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 30 Hz ... 15 kHz BC 849 BC 850 BC 849 f = 1 kHz, f = 200 Hz BC 850 Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 k f = 10 Hz ... 50 Hz BC 850 fT Cobo Cibo h11e - - - h12e - - - h21e - - - h22e - - - F - - - - Vn - 1.4 1.4 1.2 1.0 - 4 3 4 4 0.135 V Values typ. max. Unit - - - 250 3 8 - - - MHz pF k 2.7 4.5 8.7 - - - 10- 4 1.5 2.0 3.0 - - - - 200 330 600 - - - S 18 30 60 - - - dB Semiconductor Group 4 BC 846 ... BC 850 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 846 ... BC 850 Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 846 ... BC 850 h parameter he = f (IC) normalized VCE = 5 V h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 k, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, VCE = 5 V, RS = 2 k Semiconductor Group 7 BC 846 ... BC 850 Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8 |
Price & Availability of BC846-BC850
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |