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Silicon Discrete Components
Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W
Application Note No. 014
Figure 1
RF Transistor Controlled by BCR400
Operating Point * BCR400 stabilizes the operating current (i.e. IC or ID), the collector (or drain) voltage depends on the supply voltage: VCE = VS - 0.65 V * The voltage drop of approximately 0.65 V on Rext (i.e. between pins 3 and 4 of BCR400) is almost constant (Rext = 0.65 V x IC) * In case a lower VCE is really required (e.g. to prevent exceeding of maximum VCE or VDS ratings), an additional resistor R = (VS - VCE - 0.65 V) / IC can be inserted either between pin 4 and collector (or drain) or in series to the supply voltage VS, thus providing an additional voltage drop.
Application Note
1
2000-07-27
Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W
Stability BCR400 stabilizes bias current of transistors in an active control loop. In order to avoid loop oscillation (hunting), time constants must be chosen adequately, i.e. C1 >= 10 x C2. It is strongly recommended that the entire DC circuit is analyzed and optimized for stability with one of the commercially available SPICE simulators. Thermal considerations The collector or drain current of a stabilized RF transistor does not directly affect BCR400, as it must only provide the base current (or gate bias current). Even as a standalone current source it is not possible to exceed Ptot (up to Ts = 115C), if the maximum ratings of Vs and Icontr are adhered to (see data sheet). Preliminary SPICE Parameters
***************************************************************** .MODEL DI400 D( + IS= 6.00E-15 N= 1.20E+00 RS= 5.0E+01 + IBV= 1.00E-04 BV= 7.50E+01 + M= 1.00E-01 CJO= 6.87E-13 EG= 1.11E+00 + TT= 8.66E-09 VJ= 2.00E+00 XTI= 5.00E+00) * one internal Diode of BCR400 ***************************************************************** .MODEL TR400 PNP( + BF= 3.00E+02 BR= 3.38E+00 CJC= 2.00E-12 + CJE= 1.56E-11 CJS= 0.00E+00 EG= 1.11E+00 FC= 8.28E-01 + IKF= 1.00E-02 IKR= 0.40E-02 IRB= 0.30E-06 IS= 0.30E-14 + ISC= 2.00E-14 ISE= 0.50E-13 ITF= 0.50E-01 + MJC= 3.49E-01 MJE= 4.18E-01 MJS= 3.30E-01 NC= 1.19E+00 + NE= 1.83E+00 NF= 1.00E+00 NR= 1.00E+00 PTF= 0.00E+00 + RB= 1.00E+02 RBM= 1.00E+01 RC= 5.00E+00 RE= 2.00E-01 + TF= 6.05E-10 TR= 0.00E+00 VAF= 5.90E+01 VAR= 1.74E+01 + VJC= 3.00E-01 VJE= 8.00E-01 VJS= 7.50E-01 VTF= 4.39E+00 + XCJC= 1.00E+00 XTB= 0.00E+00 XTF= 5.81E+00 XTI= 1.50E+00) ***************************************************************** * internal parallel resistance Rint= 6.5 kOhm * Rb= 75 kOhm *****************************************************************
Application Note
2
2000-07-27
Application Considerations for the Integrated Bias Control Circuits BCR400R and BCR400W Revision History: Previous Version: Page Subjects (major changes since last revision) Document's layout has been changed: 2002-Aug. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon Technologies Companies and Representatives worldwide: see our webpage at http://www.infineon.com. 2000-07-27 DS0
Edition 2000-07-27 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 Munchen, Germany
(c) Infineon Technologies AG 2002.
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