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| DISCRETE SEMICONDUCTORS DATA SHEET BF904WR N-channel dual-gate MOS-FET Product specification File under Discrete Semiconductors, SC07 1995 Apr 25 Philips Semiconductors Philips Semiconductors Product specification N-channel dual-gate MOS-FET FEATURES * Specially designed for use at 5 V supply voltage * Short channel transistor with high forward transfer admittance to input capacitance ratio * Low noise gain controlled amplifier up to 1 GHz * Superior cross-modulation performance during AGC. APPLICATIONS * VHF and UHF applications with 3 to 7 V supply voltage such as television tuners and professional communications equipment. DESCRIPTION Enhancement type field-effect transistor in a plastic microminiature SOT343R package. The transistor consists of an amplifier MOS-FET with source and substrate interconnected and an internal bias circuit to ensure good cross-modulation performance during AGC. CAUTION Marking code: MC. handbook, halfpage BF904WR PINNING PIN 1 2 3 4 SYMBOL s, b d g2 g1 source drain gate 2 gate 1 DESCRIPTION d 4 3 g2 g1 2 1 Top view MAM192 s,b The device is supplied in an antistatic package. The gate-source input must be protected against static discharge during transport or handling. Fig.1 Simplified outline (SOT343R) and symbol. QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj yfs Cig1-s Crs F drain current total power dissipation operating junction temperature forward transfer admittance input capacitance at gate 1 reverse transfer capacitance noise figure f = 1 MHz f = 800 MHz PARAMETER drain-source voltage CONDITIONS - - - - 22 - - - MIN. - - - - 25 2.2 25 2 TYP. MAX. 7 30 280 150 30 2.6 35 - UNIT V mA mW C mS pF fF dB 1995 Apr 25 2 Philips Semiconductors Product specification N-channel dual-gate MOS-FET LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VDS ID IG1 IG2 Ptot Tstg Tj Note 1. Device mounted on a printed-circuit board. PARAMETER drain-source voltage drain current gate 1 current gate 2 current total power dissipation storage temperature operating junction temperature up to Tamb = 50 C; see Fig.2; note 1 CONDITIONS - - - - - -65 - MIN. 7 30 BF904WR MAX. V UNIT mA mA mA mW C C 10 10 280 +150 +150 MLD150 handbook, halfpage 300 Ptot (mW) 200 100 0 0 50 100 150 200 Tamb ( oC) Fig.2 Power derating curve. 1995 Apr 25 3 Philips Semiconductors Product specification N-channel dual-gate MOS-FET THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-s Notes 1. Device mounted on a printed-circuit board. 2. Ts is the temperature at the soldering point of the source lead. STATIC CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL V(BR)G1-SS V(BR)G2-SS V(F)S-G1 V(F)S-G2 VG1-S(th) VG2-S(th) IDSX IG1-SS IG2-SS Note 1. RG connects gate 1 to VGG = 5 V. DYNAMIC CHARACTERISTICS Common source; Tamb = 25 C; VDS = 5 V; VG2-S = 4 V; ID = 10 mA; unless otherwise specified. SYMBOL yfs Cig1-s Cig2-s Cos Crs F PARAMETER forward transfer admittance input capacitance at gate 1 input capacitance at gate 2 drain-source capacitance noise figure f = 1 MHz f = 1 MHz f = 1 MHz f = 200 MHz; GS = 2 mS; BS = BSopt f = 800 MHz; GS = GSopt; BS = BSopt CONDITIONS pulsed; Tj = 25 C - 1 1 - - - MIN. 22 TYP. 25 2.2 1.5 1.3 25 1 2 PARAMETER gate 1-source breakdown voltage gate 2-source breakdown voltage forward source-gate 1 voltage forward source-gate 2 voltage gate 1-source threshold voltage gate 2-source threshold voltage drain-source current gate 1 cut-off current gate 2 cut-off current CONDITIONS VG2-S = VDS = 0; IG1-S = 10 mA VG1-S = VDS = 0; IG2-S = 10 mA VG2-S = VDS = 0; IS-G1 = 10 mA VG1-S = VDS = 0; IS-G2 = 10 mA VG2-S = 4V; VDS = 5 V; ID = 20 A VG1-S = VDS = 5 V; ID = 20 A VG2-S = 4 V; VDS = 5 V; RG1 = 120 k; note 1 VG2-S = VDS = 0; VG1-S = 5 V VG1-S = VDS = 0; VG2-S = 5 V 6 6 0.5 0.5 0.3 0.3 8 - - MIN. PARAMETER thermal resistance from junction to ambient thermal resistance from junction to soldering point CONDITIONS note 1 Ts = 91 C; note 2 BF904WR VALUE 350 210 UNIT K/W K/W MAX. 15 15 1.5 1.5 1 1.2 13 50 50 UNIT V V V V V V mA nA nA MAX. 30 2.6 2 1.6 35 1.5 2.8 UNIT mS pF pF pF fF dB dB reverse transfer capacitance f = 1 MHz 1995 Apr 25 4 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR 40 Y fs (mS) 30 MLD268 MRA769 handbook, halfpage gain 0 reduction (dB) 10 20 20 30 10 40 50 0 50 0 50 100 150 o T j ( C) 0 1 2 3 VAGC (V) 4 f = 50 MHz. Tj = 25 C. Fig.3 Forward transfer admittance as a function of junction temperature; typical values. Fig.4 Typical gain reduction as a function of AGC voltage. handbook, halfpage 120 MRA771 MLD270 20 ID (mA) 15 2V V G2 S = 4 V 3V 2.5 V Vunw (dB V) 110 100 10 1.5 V 90 5 1V 80 0 0 10 20 30 40 50 gain reduction (dB) 0 0.4 0.8 1.2 1.6 2.0 V G1 S (V) VGG = 5 V; fw = 50 MHz. funw = 60 MHz; Tamb = 25 C; RG1 = 120 k. Fig.5 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values; see Fig.19. VDS = 5 V. Tj = 25 C. Fig.6 Transfer characteristics; typical values. 1995 Apr 25 5 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD269 MLD271 handbook, halfpage 20 ID (mA) 16 V G1 S = 1.4 V handbook, halfpage 150 I G1 1.3 V 1.2 V 1.1 V (A) 100 V G2 S = 4 V 3.5 V 3V 12 2.5 V 50 8 1.0 V 0.9 V 2V 4 0 0 2 4 6 8 10 V DS (V) 0 0 0.5 1.0 1.5 2.0 2.5 V G1 S (V) VG2-S = 4 V. Tj = 25 C. VDS = 5 V. Tj = 25 C. Fig.8 Fig.7 Output characteristics; typical values. Gate 1 current as a function of gate 1 voltage; typical values. MLD272 MLD273 handbook, halfpage 40 handbook, halfpage 16 y fs (mS) 30 V G2 S = 4 V 3.5 V 3V ID (mA) 12 20 2.5 V 8 10 4 2V 0 0 4 8 12 16 20 I D (mA) 0 0 10 20 30 40 50 I G1 (A) VDS = 5 V. Tj = 25 C. VDS = 5 V; VG2-S = 4 V. Tj = 25 C. Fig.9 Forward transfer admittance as a function of drain current; typical values. Fig.10 Drain current as a function of gate 1 current; typical values. 1995 Apr 25 6 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR MLD275 handbook, halfpage 12 MLD274 handbook, halfpage 20 ID (mA) ID (mA) 15 R G1 = 47 k 68 k 82 k 100 k 120 k 150 k 8 10 180 k 220 k 5 4 0 0 1 2 3 4 VGG (V) VDS = 5 V; VG2-S = 4 V. RG1 = 120 k (connected to VGG); Tj = 25 C. 0 5 0 2 4 6 V GG = V DS (V) 8 VG2-S = 4 V. RG1 connected to VGG; Tj = 25 C. Fig.11 Drain current as a function of gate 1 supply voltage (= VGG); typical values; see Fig.19. Fig.12 Drain current as a function of gate 1 (= VGG) and drain supply voltage; typical values; see Fig.19. MLD276 handbook, halfpage 12 ID (mA) 8 V GG = 5 V 4.5 V 4V 3.5 V 3V handbook, halfpage 40 MLB945 I G1 (A) 30 V GG = 5 V 4.5 V 4V 20 3.5 V 3V 4 10 0 0 2 4 V G2 S (V) 6 0 0 2 4 V G2 S (V) 6 VDS = 5 V; Tj = 25 C. RG = 120 k (connected to VGG). VDS = 5 V; Tj = 25 C. RG = 120 k (connected to VGG). Fig.13 Drain current as a function of gate 2 voltage; typical values; see Fig.19. Fig.14 Gate 1 current as a function of gate 2 voltage; typical values; see Fig.19. 1995 Apr 25 7 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR 10 2 handbook, halfpage y is (mS) 10 MLD277 10 3 y rs (S) 10 2 b is MLD278 10 3 rs (deg) rs y rs 10 2 1 10 10 g is 10 1 10 102 f (MHz) 10 3 1 10 1 102 f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID = 10 mA; Tamb = 25 C. VDS = 5 V; VG2 = 4 V. ID =10 mA; Tamb = 25 C. Fig.15 Input admittance as a function of frequency; typical values. Fig.16 Reverse transfer admittance and phase as a function of frequency; typical values. 10 2 MLD279 10 2 MLD280 handbook, halfpage 10 y fs (mS) y fs fs (deg) yos (mS) bos 1 10 fs 10 gos 10 1 1 10 1 102 f (MHz) 10 3 10 2 10 102 f (MHz) 10 3 VDS = 5 V; VG2 = 4 V. ID = 10 mA; Tamb = 25 C. VDS = 5 V; VG2 = 4 V. ID = 10 mA; Tamb = 25 C. Fig.17 Forward transfer admittance and phase as a function of frequency; typical values. Fig.18 Output admittance as a function of frequency; typical values. 1995 Apr 25 8 Philips Semiconductors Product specification N-channel dual-gate MOS-FET BF904WR VAGC R1 10 k C1 4.7 nF C3 12 pF C2 R GEN 50 VI R2 50 4.7 nF DUT R G1 L1 450 nH C4 4.7 nF RL 50 VGG V DS MLD171 Fig.19 Cross-modulation test set-up. 1995 Apr 25 9 Philips Semiconductors Product specification N-channel dual-gate MOS-FET Table 1 f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 3000 Table 2 Scattering parameters: VDS =5 V; VG2-S = 4 V; ID = 10 mA s11 MAGNITUDE (ratio) 0.989 0.985 0.976 0.958 0.942 0.918 0.899 0.876 0.852 0.823 0.800 0.750 0.719 0.682 0.642 0.602 0.547 0.596 0.682 0.771 0.793 ANGLE (deg) -3.4 -8.3 -16.4 -24.1 -32.0 -39.3 -46.0 -52.6 -58.8 -64.9 -70.9 -82.4 -92.7 -102.5 -109.8 -116.5 -124.9 -128.7 -132.6 -142.5 -157.5 s21 MAGNITUDE (ratio) 2.420 2.414 2.368 2.301 2.251 2.170 2.080 2.001 1.924 1.829 1.747 1.621 1.535 1.424 1.349 1.283 1.130 1.018 0.979 0.804 0.541 ANGLE (deg) 175.7 169.1 158.8 148.5 138.8 129.5 120.7 112.1 103.2 94.7 86.5 70.7 54.6 39.4 22.5 1.1 -15.1 -49.1 -79.4 -116.2 -153.5 s12 MAGNITUDE (ratio) 0.000 0.001 0.003 0.004 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.005 0.008 0.010 0.013 0.018 0.014 0.040 0.077 0.120 0.149 ANGLE (deg) 79.9 78.3 80.3 73.7 70.7 67.2 67.8 68.6 72.9 78.7 88.3 120.5 139.8 137.8 156.8 175.1 172.6 -163.9 -164.0 178.8 158.3 BF904WR s22 MAGNITUDE (ratio) 0.993 0.992 0.987 0.980 0.974 0.966 0.958 0.951 0.944 0.937 0.933 0.928 0.930 0.924 0.928 0.928 0.887 0.837 0.778 0.629 0.479 ANGLE (deg) -1.6 -3.9 -7.8 -11.4 -15.2 -18.7 -22.2 -25.5 -28.9 -32.1 -35.2 -41.7 -48.4 -54.9 -62.9 -73.1 -81.0 -95.8 -109.6 -119.5 -119.9 Noise data: VDS = 5 V; VG2-S = 4 V; ID = 10 mA f (MHz) 800 Fmin (dB) 2.00 opt (ratio) .686 (deg) 49.6 rn 50.40 1995 Apr 25 10 Philips Semiconductors Product specification N-channel dual-gate MOS-FET PACKAGE OUTLINE BF904WR 1.00 max 0.2 M A 0.2 M B 0.4 0.2 0.1 max 0.2 A 3 4 2.2 2.0 1.35 1.15 2 1 0.7 0.5 1.4 1.2 2.2 1.8 B 0.3 0.1 0.25 0.10 MSB367 Dimensions in mm. Fig.20 SOT343R. 1995 Apr 25 11 Philips Semiconductors Product specification N-channel dual-gate MOS-FET DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values BF904WR This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1995 Apr 25 12 |
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